Справочник IGBT. IGC99T120T8RM

 

IGC99T120T8RM - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: IGC99T120T8RM
   Тип транзистора: IGBT
   Тип управляющего канала: N
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 100 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.97 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6.4 V
   Tjⓘ - Максимальная температура перехода: 175 ℃
   Тип корпуса: CHIP

 Аналог (замена) для IGC99T120T8RM

 

 

IGC99T120T8RM Datasheet (PDF)

 ..1. Size:72K  infineon
 igc99t120t8rm.pdf

IGC99T120T8RM IGC99T120T8RM

IGC99T120T8RMIGBT4 Medium Power ChipFeatures: Recommended for: 1200V Trench & Field stop technology medium power modulesC low switching losses soft turn offApplications: positive temperature coefficient medium power drives easy parallelingG Qualified according to JEDEC for targetEapplicationsChip Type VCE ICn1 ) Die Size PackageIGC99T120T

 2.1. Size:67K  infineon
 igc99t120t8rl.pdf

IGC99T120T8RM IGC99T120T8RM

IGC99T120T8RLIGBT4 Low Power ChipFeatures: Recommended for: 1200V Trench & Field stop technology low / medium power modules C low switching losses positive temperature coefficientApplications: easy paralleling low / medium power drives Qualified according to JEDEC for targetGapplications EChip Type VCE ICn1 ) Die Size PackageIGC99T120T8RL 1200V 10

 2.2. Size:70K  infineon
 igc99t120t8rh.pdf

IGC99T120T8RM IGC99T120T8RM

IGC99T120T8RHIGBT4 High Power ChipFeatures: Recommended for: 1200V Trench + Field stop technology medium / high power modulesC low VCE(sat) soft turn offApplications: positive temperature coefficient medium / high power drives easy parallelingG Qualified according to JEDEC for targetEapplicationsChip Type VCE ICn1 ) Die Size PackageIGC99T

 2.3. Size:82K  infineon
 igc99t120t8rq.pdf

IGC99T120T8RM IGC99T120T8RM

IGC99T120T8RQHigh Speed IGBT in Trench and Fieldstop TechnologyFeatures: This chip is used for: 1200V Trench & Field stop technology power modulesC low switching losses positive temperature coefficientApplications: easy paralleling high frequency drivesG UPSE Welding Solar invertersChip Type VCE ICn1) Die Size PackageIGC99T120T8RQ 1200

Другие IGBT... IGC36T120T8L , MIXA30W1200TML , IGC36T120T6L , MIXA30WB1200TED , IGC31T65QE , MIXA40W1200TED , IGC99T120T8RQ , MIXA40W1200TMH , CRG60T60AK3HD , MIXA40W1200TML , IGC99T120T8RL , MIXA40WB1200TED , IGC99T120T8RH , MIXA60W1200TED , IGC99T120T6RM , MIXA60WB1200TEH , IGC99T120T6RL .

 

 
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