IGC99T120T8RM Даташит. Аналоги. Параметры и характеристики.
Наименование: IGC99T120T8RM
Тип транзистора: IGBT
Тип управляющего канала: N
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 100 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.97 V @25℃
Tjⓘ - Максимальная температура перехода: 175 ℃
Тип корпуса: CHIP
- подбор IGBT транзистора по параметрам
IGC99T120T8RM Datasheet (PDF)
igc99t120t8rm.pdf

IGC99T120T8RMIGBT4 Medium Power ChipFeatures: Recommended for: 1200V Trench & Field stop technology medium power modulesC low switching losses soft turn offApplications: positive temperature coefficient medium power drives easy parallelingG Qualified according to JEDEC for targetEapplicationsChip Type VCE ICn1 ) Die Size PackageIGC99T120T
igc99t120t8rl.pdf

IGC99T120T8RLIGBT4 Low Power ChipFeatures: Recommended for: 1200V Trench & Field stop technology low / medium power modules C low switching losses positive temperature coefficientApplications: easy paralleling low / medium power drives Qualified according to JEDEC for targetGapplications EChip Type VCE ICn1 ) Die Size PackageIGC99T120T8RL 1200V 10
igc99t120t8rh.pdf

IGC99T120T8RHIGBT4 High Power ChipFeatures: Recommended for: 1200V Trench + Field stop technology medium / high power modulesC low VCE(sat) soft turn offApplications: positive temperature coefficient medium / high power drives easy parallelingG Qualified according to JEDEC for targetEapplicationsChip Type VCE ICn1 ) Die Size PackageIGC99T
igc99t120t8rq.pdf

IGC99T120T8RQHigh Speed IGBT in Trench and Fieldstop TechnologyFeatures: This chip is used for: 1200V Trench & Field stop technology power modulesC low switching losses positive temperature coefficientApplications: easy paralleling high frequency drivesG UPSE Welding Solar invertersChip Type VCE ICn1) Die Size PackageIGC99T120T8RQ 1200
Другие IGBT... IGC36T120T8L , MIXA30W1200TML , IGC36T120T6L , MIXA30WB1200TED , IGC31T65QE , MIXA40W1200TED , IGC99T120T8RQ , MIXA40W1200TMH , GT30F131 , MIXA40W1200TML , IGC99T120T8RL , MIXA40WB1200TED , IGC99T120T8RH , MIXA60W1200TED , IGC99T120T6RM , MIXA60WB1200TEH , IGC99T120T6RL .
History: TGAN20N150FD | T0850VB25E
History: TGAN20N150FD | T0850VB25E



Список транзисторов
Обновления
IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
Popular searches
кт630 | 2g381 transistor | 2sc2383 transistor equivalent | 2sd669 transistor | 75n65kdf | c2274 transistor | c5200 2sc5200 transistor datasheet | d2390 datasheet