IGC70T120T8RQ - аналоги и описание IGBT

 

IGC70T120T8RQ - аналоги, основные параметры, даташиты

Наименование: IGC70T120T8RQ

Тип транзистора: IGBT

Тип управляющего канала: N

Предельные значения

|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V

|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V

|Ic| ⓘ - Максимальный постоянный ток коллектора: 75 A @25℃

Tj ⓘ - Максимальная температура перехода: 175 ℃

Электрические характеристики

|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.42 V @25℃

Тип корпуса: CHIP

 Аналог (замена) для IGC70T120T8RQ

- подбор ⓘ IGBT транзистора по параметрам

 

IGC70T120T8RQ даташит

 ..1. Size:77K  infineon
igc70t120t8rq.pdfpdf_icon

IGC70T120T8RQ

IGC70T120T8RQ High Speed IGBT in Trench and Fieldstop Technology Features Recommended for 1200V Trench + Field stop technology power modules C low switching losses positive temperature coefficient Applications easy paralleling high frequency drives G UPS E Welding Solar inverters Chip Type VCE ICn1) Die Size Package IGC70T120T8RQ 1200V 75A

 2.1. Size:70K  infineon
igc70t120t8rl.pdfpdf_icon

IGC70T120T8RQ

IGC70T120T8RL IGBT4 Low Power Chip Features Recommended for 1200V Trench & Field stop technology low / medium power modules C low switching losses positive temperature coefficient Applications easy paralleling low / medium power drives Qualified according to JEDEC for target G applications E Chip Type VCE ICn1 ) Die Size Package IGC70T120T8RL 1200V 75

 2.2. Size:71K  infineon
igc70t120t8rm.pdfpdf_icon

IGC70T120T8RQ

IGC70T120T8RM IGBT4 Medium Power Chip Features Recommended for 1200V Trench + Field stop technology medium power modules C low switching losses soft turn off Applications positive temperature coefficient medium power drives easy paralleling G Qualified according to JEDEC for target E applications Chip Type VCE ICn1 ) Die Size Package IGC70T120T

 4.1. Size:70K  infineon
igc70t120t6rl.pdfpdf_icon

IGC70T120T8RQ

IGC70T120T6RL IGBT4 Low Power Chip FEATURES 1200V Trench + Field Stop technology This chip is used for C low switching losses low / medium power modules positive temperature coefficient easy paralleling Applications G low / medium power drives E Chip Type VCE ICn Die Size Package IGC70T120T6RL 1200V 75A 9.12 x 7.71 mm2 sawn on foil MECHANICA

Другие IGBT... MIXA80R1200VA , MIXA80W1200TED , IGC89T170S8RM , MIXA80W1200TEH , IGC82T170S8RM , MIXA80WB1200TEH , IGC76T65T8RM , MIXA81H1200EH , IHW40T60 , MKI100-12E8 , MKI100-12F8 , MKI50-06A7 , MKI50-06A7T , MKI50-12E7 , MKI50-12F7 , MKI75-06A7 , MKI75-06A7T .

 

 

 


 
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