Справочник IGBT. IGC70T120T8RQ

 

IGC70T120T8RQ Даташит. Аналоги. Параметры и характеристики.


   Наименование: IGC70T120T8RQ
   Тип транзистора: IGBT
   Тип управляющего канала: N
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 75 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.42 V @25℃
   Tjⓘ - Максимальная температура перехода: 175 ℃
   Тип корпуса: CHIP
     - подбор IGBT транзистора по параметрам

 

IGC70T120T8RQ Datasheet (PDF)

 ..1. Size:77K  infineon
igc70t120t8rq.pdfpdf_icon

IGC70T120T8RQ

IGC70T120T8RQHigh Speed IGBT in Trench and Fieldstop TechnologyFeatures: Recommended for: 1200V Trench + Field stop technology power modulesC low switching losses positive temperature coefficientApplications: easy paralleling high frequency drivesG UPSE Welding Solar invertersChip Type VCE ICn1) Die Size PackageIGC70T120T8RQ 1200V 75A

 2.1. Size:70K  infineon
igc70t120t8rl.pdfpdf_icon

IGC70T120T8RQ

IGC70T120T8RLIGBT4 Low Power ChipFeatures: Recommended for: 1200V Trench & Field stop technology low / medium power modules C low switching losses positive temperature coefficientApplications: easy paralleling low / medium power drives Qualified according to JEDEC for targetGapplications EChip Type VCE ICn1 ) Die Size PackageIGC70T120T8RL 1200V 75

 2.2. Size:71K  infineon
igc70t120t8rm.pdfpdf_icon

IGC70T120T8RQ

IGC70T120T8RMIGBT4 Medium Power ChipFeatures: Recommended for: 1200V Trench + Field stop technology medium power modulesC low switching losses soft turn offApplications: positive temperature coefficient medium power drives easy parallelingG Qualified according to JEDEC for targetEapplicationsChip Type VCE ICn1 ) Die Size PackageIGC70T120T

 4.1. Size:70K  infineon
igc70t120t6rl.pdfpdf_icon

IGC70T120T8RQ

IGC70T120T6RL IGBT4 Low Power Chip FEATURES: 1200V Trench + Field Stop technology This chip is used for:C low switching losses low / medium power modules positive temperature coefficient easy paralleling Applications: G low / medium power drives E Chip Type VCE ICn Die Size Package IGC70T120T6RL 1200V 75A 9.12 x 7.71 mm2 sawn on foil MECHANICA

Другие IGBT... MIXA80R1200VA , MIXA80W1200TED , IGC89T170S8RM , MIXA80W1200TEH , IGC82T170S8RM , MIXA80WB1200TEH , IGC76T65T8RM , MIXA81H1200EH , GT30G122 , MKI100-12E8 , MKI100-12F8 , MKI50-06A7 , MKI50-06A7T , MKI50-12E7 , MKI50-12F7 , MKI75-06A7 , MKI75-06A7T .

History: MPBW50N65ES | HGT1S14N36G3VL | MPBW50N65E | PPNHZ52F120A | 1MBI300F-120 | MPBQ120N65GSF | RGT50NL65D

 

 
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