Справочник IGBT. STGB10NC60HD

 

STGB10NC60HD - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: STGB10NC60HD
   Тип транзистора: IGBT + Diode
   Маркировка: GB10NC60HD
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 65 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 20 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.9 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 5.75 V
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 5 nS
   Coesⓘ - Выходная емкость, типовая: 43 pF
   Qgⓘ - Общий заряд затвора, typ: 19.2 nC
   Тип корпуса: D2PAK

 Аналог (замена) для STGB10NC60HD

 

 

STGB10NC60HD Datasheet (PDF)

 ..1. Size:767K  st
 stgb10nc60hd.pdf

STGB10NC60HD STGB10NC60HD

STGB10NC60HD - STGD10NC60HDSTGF10NC60HD - STGP10NC60HD 600 V - 10 A - very fast IGBTFeatures2 Low on-voltage drop (VCE(sat))3 Low CRES / CIES ratio (no cross-conduction 3 11susceptibility)DPAK DPAK Very soft ultra fast recovery antiparallel diodeApplications High frequency motor controls3 32 2 SMPS and PFC in both hard switch and 1 1resonant

 ..2. Size:768K  st
 stgb10nc60hd stgd10nc60hd stgf10nc60hd stgp10nc60hd.pdf

STGB10NC60HD STGB10NC60HD

STGB10NC60HD - STGD10NC60HDSTGF10NC60HD - STGP10NC60HD 600 V - 10 A - very fast IGBTFeatures2 Low on-voltage drop (VCE(sat))3 Low CRES / CIES ratio (no cross-conduction 3 11susceptibility)DPAK DPAK Very soft ultra fast recovery antiparallel diodeApplications High frequency motor controls3 32 2 SMPS and PFC in both hard switch and 1 1resonant

 4.1. Size:605K  st
 stgb10nc60kd.pdf

STGB10NC60HD STGB10NC60HD

STGB10NC60KD, STGD10NC60KDSTGF10NC60KD, STGP10NC60KD10 A, 600 V short-circuit rugged IGBTFeaturesTABTAB Lower on voltage drop (VCE(sat))3 Lower CRES / CIES ratio (no cross-conduction 131susceptibility)DPAK Very soft ultra fast recovery antiparallel diode D2PAKTAB Short-circuit withstand time 10sDescriptionThis IGBT utilizes the advanced PowerM

 4.2. Size:607K  st
 stgb10nc60kd stgd10nc60kd stgf10nc60kd stgp10nc60kd.pdf

STGB10NC60HD STGB10NC60HD

STGB10NC60KD, STGD10NC60KDSTGF10NC60KD, STGP10NC60KD10 A, 600 V short-circuit rugged IGBTFeaturesTABTAB Lower on voltage drop (VCE(sat))3 Lower CRES / CIES ratio (no cross-conduction 131susceptibility)DPAK Very soft ultra fast recovery antiparallel diode D2PAKTAB Short-circuit withstand time 10sDescriptionThis IGBT utilizes the advanced PowerM

 4.3. Size:608K  st
 stgb10nc60k stgp10nc60k stgd10nc60k.pdf

STGB10NC60HD STGB10NC60HD

STGB10NC60K - STGD10NC60KSTGP10NC60KN-channel 600V - 10A - D2PAK / TO-220 / DPAKShort circuit rated PowerMESH IGBTGeneral featuresICVCE(sat)MaxType VCES@25C @100CSTGB10NC60K 600V

 4.4. Size:1653K  st
 stgb10nc60kdt4 stgd10nc60kdt4 stgf10nc60kd stgp10nc60kd.pdf

STGB10NC60HD STGB10NC60HD

STGB10NC60KDT4, STGD10NC60KDT4, STGF10NC60KD, STGP10NC60KD 10 A, 600 V short-circuit rugged IGBT Datasheet - production data Features Lower on voltage drop (V ) CE(sat) Lower C / C ratio (no cross-conduction RES IESsusceptibility) Very soft ultra fast recovery antiparallel diode Short-circuit withstand time 10 s Applications High frequency motor

 4.5. Size:363K  st
 stgb10nc60k.pdf

STGB10NC60HD STGB10NC60HD

STGB10NC60K10 A, 600 V short-circuit rugged IGBTFeatures Low on voltage drop (VCESAT) Short-circuit withstand time 10 sTABApplications High frequency motor controls31 SMPS and PFC in both hard switch and resonant topologiesDPAK Motor drivesDescriptionThis device utilizes the advanced Power MESH Figure 1. Internal schematic diagramprocess r

Другие IGBT... VKI50-06P1 , VKI50-12P1 , VKI75-06P1 , VWI15-12P1 , VWI20-06P1 , VWI35-06P1 , STGB10NB40LZ , STGB10NB60S , CRG75T60AK3HD , STGB10NC60K , STGB10NC60KD , STGB14NC60KD , STGB18N40LZ , STGB19NC60H , STGB19NC60HD , STGB19NC60K , STGB19NC60KD .

 

 
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