STGD10NC60S Даташит. Аналоги. Параметры и характеристики.
Наименование: STGD10NC60S
Тип транзистора: IGBT
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 60 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 18 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.45 V @25℃
Tjⓘ - Максимальная температура перехода: 150 ℃
trⓘ - Время нарастания типовое: 4 nS
Coesⓘ - Выходная емкость, типовая: 44 pF
Тип корпуса: DPAK
- подбор IGBT транзистора по параметрам
STGD10NC60S Datasheet (PDF)
stgd10nc60s.pdf

STGD10NC60SSTGP10NC60S10 A, 600 V fast IGBTFeatures Optimized performance for medium operating frequencies up to 5 kHz in hard switchingTAB Low on-voltage drop (VCE(sat))TABApplication3321 1 Motor driveDPAK TO-220DescriptionThis IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-off between switching performance and low
stgd10nc60s stgp10nc60s.pdf

STGD10NC60SSTGP10NC60S10 A - 600 V fast IGBTFeatures Very low on-voltage drop (VCE(sat)) Minimum power losses at 5 kHz in hard switching Optimized performance for medium operating frequencies33211ApplicationDPAK TO-220 Medium frequency motor controlDescriptionThis IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-of
stgd10nc60sd.pdf

STGD10NC60SDSTGF10NC60SD10 A, 600 V fast IGBTFeatures Optimized performance for medium operating frequencies up to 5 kHz in hard switching Low on-voltage drop (VCE(sat)) Very soft ultra fast antiparallel diode3321Application1 Motor driveDPAKTO-220FPDescriptionThis IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-of
stgd10nc60sd stgf10nc60sd.pdf

STGD10NC60SDSTGF10NC60SD10 A, 600 V fast IGBTFeatures Optimized performance for medium operating frequencies up to 5 kHz in hard switching Low on-voltage drop (VCE(sat)) Very soft ultra fast antiparallel diode3321Application1 Motor driveDPAKTO-220FPDescriptionThis IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-of
Другие IGBT... STGB8NC60K , STGB8NC60KD , STGBL6NC60D , STGBL6NC60DI , STGD10HF60KD , STGD10NC60H , STGD10NC60HD , STGD10NC60KD , GT60N321 , STGD10NC60SD , STGD14NC60K , STGD18N40LZ , STGD3HF60HD , STGD3NB60SD , STGD5NB120SZ , STGD6NC60HD , STGD7NB60S .
History: SGTP75V65SDS1P7 | GT60M102 | DIM250PLM33-TL | STGFW30H65FB | KGF40N60PA | BLG60T65FDK-K | IRGS4640D
History: SGTP75V65SDS1P7 | GT60M102 | DIM250PLM33-TL | STGFW30H65FB | KGF40N60PA | BLG60T65FDK-K | IRGS4640D



Список транзисторов
Обновления
IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
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