STGB14NC60KSTGD14NC60KN-channel 14A - 600V -DPAK - D2PAKShort circuit rated PowerMESH IGBTGeneral featuresIC VCE(sat) Type VCES(Max)@ 25C @100CSTGB14NC60K 600V

STGB14NC60KSTGD14NC60KN-channel 14A - 600V -DPAK - D2PAKShort circuit rated PowerMESH IGBTGeneral featuresIC VCE(sat) Type VCES(Max)@ 25C @100CSTGB14NC60K 600V

STGB18N40LZSTGD18N40LZ, STGP18N40LZEAS 180 mJ - 390 V - internally clamped IGBTFeatures AEC Q101 compliant3 32 180 mJ of avalanche energy @ TC = 150 C, 11L = 3 mHDPAKIPAK ESD gate-emitter protection Gate-collector high voltage clamping 3 Logic level gate drive 21 Low saturation voltage TO-22031 High pulsed current capability 3

STGD10NC60SDSTGF10NC60SD10 A, 600 V fast IGBTFeatures Optimized performance for medium operating frequencies up to 5 kHz in hard switching Low on-voltage drop (VCE(sat)) Very soft ultra fast antiparallel diode3321Application1 Motor driveDPAKTO-220FPDescriptionThis IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-of

STGB10NC60KD, STGD10NC60KDSTGF10NC60KD, STGP10NC60KD10 A, 600 V short-circuit rugged IGBTFeaturesTABTAB Lower on voltage drop (VCE(sat))3 Lower CRES / CIES ratio (no cross-conduction 131susceptibility)DPAK Very soft ultra fast recovery antiparallel diode D2PAKTAB Short-circuit withstand time 10sDescriptionThis IGBT utilizes the advanced PowerM

STGB10NC60KD, STGD10NC60KDSTGF10NC60KD, STGP10NC60KD10 A, 600 V short-circuit rugged IGBTFeaturesTABTAB Lower on voltage drop (VCE(sat))3 Lower CRES / CIES ratio (no cross-conduction 131susceptibility)DPAK Very soft ultra fast recovery antiparallel diode D2PAKTAB Short-circuit withstand time 10sDescriptionThis IGBT utilizes the advanced PowerM

STGD10NC60HN-channel 10A - 600V - DPAKVery fast PowerMESH IGBTFeaturesVCE(sat) IC VCESType(Max)@ 25C @100CSTGD10NC60H 600V

STGD10NC60SSTGP10NC60S10 A, 600 V fast IGBTFeatures Optimized performance for medium operating frequencies up to 5 kHz in hard switchingTAB Low on-voltage drop (VCE(sat))TABApplication3321 1 Motor driveDPAK TO-220DescriptionThis IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-off between switching performance and low

STGB18N40LZSTGD18N40LZ, STGP18N40LZEAS 180 mJ - 390 V - internally clamped IGBTFeatures AEC Q101 compliant3 32 180 mJ of avalanche energy @ TC = 150 C, 11L = 3 mHDPAKIPAK ESD gate-emitter protection Gate-collector high voltage clamping 3 Logic level gate drive 21 Low saturation voltage TO-22031 High pulsed current capability 3

STGB10NC60K - STGD10NC60KSTGP10NC60KN-channel 600V - 10A - D2PAK / TO-220 / DPAKShort circuit rated PowerMESH IGBTGeneral featuresICVCE(sat)MaxType VCES@25C @100CSTGB10NC60K 600V

STGD10NC60SDSTGF10NC60SD10 A, 600 V fast IGBTFeatures Optimized performance for medium operating frequencies up to 5 kHz in hard switching Low on-voltage drop (VCE(sat)) Very soft ultra fast antiparallel diode3321Application1 Motor driveDPAKTO-220FPDescriptionThis IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-of

STGD10HF60KDAutomotive-grade 10 A, 600 V, short-circuit rugged IGBT with Ultrafast diodeDatasheet - production dataFeatures Designed for automotive applications and AEC-Q101 qualifiedTAB Low on-voltage drop (VCE(sat))3 Low Cres / Cies ratio (no cross conduction 1susceptibility) Switching losses include diode recovery energyDPAK Short-circuit rated

STGB10NC60KDT4, STGD10NC60KDT4, STGF10NC60KD, STGP10NC60KD 10 A, 600 V short-circuit rugged IGBT Datasheet - production data Features Lower on voltage drop (V ) CE(sat) Lower C / C ratio (no cross-conduction RES IESsusceptibility) Very soft ultra fast recovery antiparallel diode Short-circuit withstand time 10 s Applications High frequency motor

STGD10NC60SSTGP10NC60S10 A - 600 V fast IGBTFeatures Very low on-voltage drop (VCE(sat)) Minimum power losses at 5 kHz in hard switching Optimized performance for medium operating frequencies33211ApplicationDPAK TO-220 Medium frequency motor controlDescriptionThis IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-of

STGD19N40LZAutomotive-grade 390 V internally clamped IGBT ESCIS 180 mJ Datasheet - production dataFeatures Designed for automotive applications and AEC-Q101 qualifiedTAB 180 mJ of avalanche energy @ TC = 150 C, L = 3 mH3 ESD gate-emitter protection1 Gate-collector high voltage clamping Logic level gate driveDPAK Low saturation voltage Hig

STGB18N40LZT4, STGD18N40LZ, STGP18N40LZAutomotive-grade 390 V internally clamped IGBT ESCIS 180 mJDatasheet - production dataFeaturesTABTAB Designed for automotive applications and 3AEC-Q101 qualified3121 180 mJ of avalanche energy @ TC = 150 C, DPAKL = 3 mHIPAK ESD gate-emitter protectionTAB Gate-collector high voltage clamping TAB

STGB10NC60HD - STGD10NC60HDSTGF10NC60HD - STGP10NC60HD 600 V - 10 A - very fast IGBTFeatures2 Low on-voltage drop (VCE(sat))3 Low CRES / CIES ratio (no cross-conduction 3 11susceptibility)DPAK DPAK Very soft ultra fast recovery antiparallel diodeApplications High frequency motor controls3 32 2 SMPS and PFC in both hard switch and 1 1resonant

STGB10NC60HD - STGD10NC60HDSTGF10NC60HD - STGP10NC60HD 600 V - 10 A - very fast IGBTFeatures2 Low on-voltage drop (VCE(sat))3 Low CRES / CIES ratio (no cross-conduction 3 11susceptibility)DPAK DPAK Very soft ultra fast recovery antiparallel diodeApplications High frequency motor controls3 32 2 SMPS and PFC in both hard switch and 1 1resonant