STGD18N40LZ - аналоги и описание IGBT

STGB18N40LZ STGD18N40LZ, STGP18N40LZ EAS 180 mJ - 390 V - internally clamped IGBT Features AEC Q101 compliant 3 3 2 180 mJ of avalanche energy @ TC = 150 C, 1 1 L = 3 mH DPAK IPAK ESD gate-emitter protection Gate-collector high voltage clamping 3 Logic level gate drive 2 1 Low saturation voltage TO-220 3 1 High pulsed current capability 3

STGB18N40LZ STGD18N40LZ, STGP18N40LZ EAS 180 mJ - 390 V - internally clamped IGBT Features AEC Q101 compliant 3 3 2 180 mJ of avalanche energy @ TC = 150 C, 1 1 L = 3 mH DPAK IPAK ESD gate-emitter protection Gate-collector high voltage clamping 3 Logic level gate drive 2 1 Low saturation voltage TO-220 3 1 High pulsed current capability 3

STGB18N40LZT4, STGD18N40LZ, STGP18N40LZ Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ Datasheet - production data Features TAB TAB Designed for automotive applications and 3 AEC-Q101 qualified 3 1 2 1 180 mJ of avalanche energy @ TC = 150 C, DPAK L = 3 mH IPAK ESD gate-emitter protection TAB Gate-collector high voltage clamping TAB

STGD10NC60SD STGF10NC60SD 10 A, 600 V fast IGBT Features Optimized performance for medium operating frequencies up to 5 kHz in hard switching Low on-voltage drop (VCE(sat)) Very soft ultra fast antiparallel diode 3 3 2 1 Application 1 Motor drive DPAK TO-220FP Description This IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-of

STGB10NC60KD, STGD10NC60KD STGF10NC60KD, STGP10NC60KD 10 A, 600 V short-circuit rugged IGBT Features TAB TAB Lower on voltage drop (VCE(sat)) 3 Lower CRES / CIES ratio (no cross-conduction 1 3 1 susceptibility) DPAK Very soft ultra fast recovery antiparallel diode D2PAK TAB Short-circuit withstand time 10 s Description This IGBT utilizes the advanced PowerM

STGB10NC60KD, STGD10NC60KD STGF10NC60KD, STGP10NC60KD 10 A, 600 V short-circuit rugged IGBT Features TAB TAB Lower on voltage drop (VCE(sat)) 3 Lower CRES / CIES ratio (no cross-conduction 1 3 1 susceptibility) DPAK Very soft ultra fast recovery antiparallel diode D2PAK TAB Short-circuit withstand time 10 s Description This IGBT utilizes the advanced PowerM

STGD10NC60H N-channel 10A - 600V - DPAK Very fast PowerMESH IGBT Features VCE(sat) IC VCES Type (Max)@ 25 C @100 C STGD10NC60H 600V

STGD10NC60S STGP10NC60S 10 A, 600 V fast IGBT Features Optimized performance for medium operating frequencies up to 5 kHz in hard switching TAB Low on-voltage drop (VCE(sat)) TAB Application 3 3 2 1 1 Motor drive DPAK TO-220 Description This IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-off between switching performance and low

STGB10NC60K - STGD10NC60K STGP10NC60K N-channel 600V - 10A - D2PAK / TO-220 / DPAK Short circuit rated PowerMESH IGBT General features IC VCE(sat)Max Type VCES @25 C @100 C STGB10NC60K 600V

STGD10NC60SD STGF10NC60SD 10 A, 600 V fast IGBT Features Optimized performance for medium operating frequencies up to 5 kHz in hard switching Low on-voltage drop (VCE(sat)) Very soft ultra fast antiparallel diode 3 3 2 1 Application 1 Motor drive DPAK TO-220FP Description This IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-of

STGD10HF60KD Automotive-grade 10 A, 600 V, short-circuit rugged IGBT with Ultrafast diode Datasheet - production data Features Designed for automotive applications and AEC-Q101 qualified TAB Low on-voltage drop (VCE(sat)) 3 Low Cres / Cies ratio (no cross conduction 1 susceptibility) Switching losses include diode recovery energy DPAK Short-circuit rated

STGB10NC60KDT4, STGD10NC60KDT4, STGF10NC60KD, STGP10NC60KD 10 A, 600 V short-circuit rugged IGBT Datasheet - production data Features Lower on voltage drop (V ) CE(sat) Lower C / C ratio (no cross-conduction RES IES susceptibility) Very soft ultra fast recovery antiparallel diode Short-circuit withstand time 10 s Applications High frequency motor

STGD10NC60S STGP10NC60S 10 A - 600 V fast IGBT Features Very low on-voltage drop (VCE(sat)) Minimum power losses at 5 kHz in hard switching Optimized performance for medium operating frequencies 3 3 2 1 1 Application DPAK TO-220 Medium frequency motor control Description This IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-of

STGB14NC60K STGD14NC60K N-channel 14A - 600V -DPAK - D2PAK Short circuit rated PowerMESH IGBT General features IC VCE(sat) Type VCES (Max)@ 25 C @100 C STGB14NC60K 600V

STGD19N40LZ Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ Datasheet - production data Features Designed for automotive applications and AEC-Q101 qualified TAB 180 mJ of avalanche energy @ TC = 150 C, L = 3 mH 3 ESD gate-emitter protection 1 Gate-collector high voltage clamping Logic level gate drive DPAK Low saturation voltage Hig

STGB10NC60HD - STGD10NC60HD STGF10NC60HD - STGP10NC60HD 600 V - 10 A - very fast IGBT Features 2 Low on-voltage drop (VCE(sat)) 3 Low CRES / CIES ratio (no cross-conduction 3 1 1 susceptibility) D PAK DPAK Very soft ultra fast recovery antiparallel diode Applications High frequency motor controls 3 3 2 2 SMPS and PFC in both hard switch and 1 1 resonant

STGB14NC60K STGD14NC60K N-channel 14A - 600V -DPAK - D2PAK Short circuit rated PowerMESH IGBT General features IC VCE(sat) Type VCES (Max)@ 25 C @100 C STGB14NC60K 600V

STGB10NC60HD - STGD10NC60HD STGF10NC60HD - STGP10NC60HD 600 V - 10 A - very fast IGBT Features 2 Low on-voltage drop (VCE(sat)) 3 Low CRES / CIES ratio (no cross-conduction 3 1 1 susceptibility) D PAK DPAK Very soft ultra fast recovery antiparallel diode Applications High frequency motor controls 3 3 2 2 SMPS and PFC in both hard switch and 1 1 resonant