STGW38IH130D - аналоги и описание IGBT

STGW38IH130D, STGWT38IH130D 33 A - 1300 V - very fast IGBT Datasheet - production data Features Low saturation voltage High current capability Low switching loss Low static and peak forward voltage drop free- 3 wheeling diode 3 2 2 1 1 Applications Induction cooking, microwave ovens TO-247 TO-3P Soft-switching applications Description Figure 1. Inter

STGW38IH130D 33 A - 1300 V - very fast IGBT Features Low saturation voltage High current capability Low switching loss Low static and peak forward voltage drop free- wheeling diode 3 2 1 Applications TO-247 Induction cooking, microwave oven Soft switching application Description This IGBT utilizes the advanced PowerMESH Figure 1. Internal schematic

STGW38IH120D 30 A - 1200 V - very fast IGBT Preliminary Data Features Low saturation voltage High current capability Low switching loss Very soft ultra fast recovery antiparallel diode 3 2 Applications 1 TO-247 long leads Induction cooking, microwave oven Soft switching application Description This IGBT utilizes the advanced PowerMESH process result

STGW35HF60WD 35 A, 600 V ultra fast IGBT Features Improved Eoff at elevated temperature Minimal tail current Low conduction losses VCE(sat) classified for easy parallel connection Ultra fast soft recovery antiparallel diode 3 2 1 Applications TO-247 Welding High frequency converters Power factor correction Description Figure 1. Internal schemati

STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF Trench gate field-stop IGBT, V series 600 V, 30 A very high speed Datasheet - production data TAB Features TAB Maximum junction temperature TJ = 175 C Tail-less switching off 3 3 2 1 VCE(sat) = 1.85 V (typ.) @ IC = 30 A 1 D PAK TO-220 Tight parameters distribution TAB Safe paralleling Low therma

STGW35NC120HD 32 A, 1200 V very fast IGBT Datasheet - production data Features Low on-losses Low on-voltage drop (VCE(sat)) High current capability IGBT co-packaged with ultrafast free-wheeling diode 3 Low gate charge 2 1 Ideal for soft switching application TO-247 long leads Application Induction heating Figure 1. Internal schematic diagram

STGW30NB60HD N-CHANNEL 30A - 600V - TO-247 PowerMESH IGBT TYPE VCES VCE(sat) (Max) IC STGW30NB60HD 600 V

STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF Trench gate field-stop IGBT, V series 600 V, 30 A very high speed Datasheet - production data TAB Features TAB Maximum junction temperature TJ = 175 C Tail-less switching off 3 3 2 1 VCE(sat) = 1.85 V (typ.) @ IC = 30 A 1 D PAK TO-220 Tight parameters distribution TAB Safe paralleling Low therma

STGW30NB60H N-CHANNEL 30A - 600V TO-247 PowerMESH IGBT TYPE VCES VCE(sat) IC STGW30NB60H 600 V

STGW30N120KD STGWA30N120KD 30 A, 1200 V short circuit rugged IGBT with Ultrafast diode Features Low on-losses High current capability Low gate charge Short circuit withstand time 10 s IGBT co-packaged with Ultrafast free-wheeling 3 diode 2 1 Applications TO-247 Motor control Description Figure 1. Internal schematic diagram This high voltage and short

STGFW30H65FB, STGW30H65FB, STGWT30H65FB Trench gate field-stop IGBT, HB series 650 V, 30 A high speed Datasheet - production data TAB Features Maximum junction temperature TJ = 175 C High speed switching series 3 Minimized tail current 2 1 VCE(sat) = 1.55 V (typ.) @ IC = 30 A TO-3PF Tight parameters distribution 1 1 1 Safe paralleling 3 Low t

STGFW30H65FB, STGW30H65FB Datasheet Trench gate field-stop 650 V, 30 A high speed HB series IGBT Features Maximum junction temperature TJ = 175 C High speed switching series Minimized tail current 1 1 1 VCE(sat) = 1.55 V (typ.) at IC = 30 A 3 2 3 1 2 1 Tight parameters distribution TO-247 TO-3PF Safe paralleling Low thermal resistance Applicati

STGW30NC60VD 40 A, 600 V, very fast IGBT with Ultrafast diode Features High current capability High frequency operation up to 50 KHz Very soft ultra fast recovery antiparallel diode Applications 3 2 High frequency inverters, UPS 1 Motor drive TO-247 long leads SMPS and PFC in both hard switch and resonant topologies Description Figure 1. Internal schemat

STGW30NC120HD N-channel 1200V - 30A - TO-247 very fast PowerMESH IGBT Features IC VCE(sat) Type VCES @25 C @100 C STGW30NC120HD 1200V

STGB30H60DF, STGF30H60DF, STGP30H60DF, STGW30H60DF 600 V, 30 A high speed trench gate field-stop IGBT Datasheet - production data Features TAB High speed switching Tight parameters distribution 3 1 3 Safe paralleling 2 1 D PAK Low thermal resistance TO-220FP Short circuit rated TAB Ultrafast soft recovery antiparallel diode Applications 3 3 I

STGW39NC60VD 40 A - 600 V - very fast IGBT Features Low CRES / CIES ratio (no cross conduction susceptibility) IGBT co-packaged with ultra fast free-wheeling diode 3 Applications 2 1 High frequency inverters TO-247 UPS Motor drivers Induction heating Description Figure 1. Internal schematic diagram This IGBT utilizes the advanced PowerMESH proces

STGW35HF60WDI 35 A, 600 V ultrafast IGBT with low drop diode Features Improved Eoff at elevated temperature Low CRES / CIES ratio (no cross-conduction susceptibility) Low VF soft recovery antiparallel diode Applications 3 2 1 Welding TO-247 Induction heating Resonant converters Description This ultrafast IGBT is developed using a new Figure 1. Interna

STGW30NC60KD 30 A - 600 V - short circuit rugged IGBT Features Low on-voltage drop (VCE(sat)) Low Cres / Cies ratio (no cross conduction susceptibility) Short circuit withstand time 10 s IGBT co-packaged with ultra fast free-wheeling diode 3 2 1 Applications TO-247 High frequency inverters Motor drivers Description Figure 1. Internal schematic diagra

STGW30H60DFB, STGWT30H60DFB Trench gate field-stop IGBT, HB series 600 V, 30 A high speed Datasheet - production data Features Maximum junction temperature TJ = 175 C High speed switching series Minimized tail current VCE(sat) = 1.55 V (typ.) @ IC = 30 A 3 3 2 2 Tight parameters distribution 1 1 TO-247 Safe paralleling TO-3P Low thermal resist

STGW30NC60WD 30 A, 600 V ultra fast IGBT Features High frequency operation Lower CRES / CIES ratio (no cross-conduction susceptibility) Very soft ultra fast recovery antiparallel diode Applications 3 2 1 High frequency motor controls, inverters, UPS TO-247 HF, SMPS and PFC in both hard switch and resonant topologies Description This IGBT utilizes the advan

STGB30H60DLFB, STGW30H60DLFB Trench gate field-stop IGBT, HB series 600 V, 30 A high speed Datasheet - production data Features Designed for soft commutation only Maximum junction temperature TJ = 175 C TAB High speed switching series Minimized tail current 3 1 3 VCE(sat) = 1.55 V (typ.) @ IC = 30 A 2 D2PAK 1 Low VF soft recovery co-packaged diode T

STGB30H60DF, STGF30H60DF, STGP30H60DF, STGW30H60DF 600 V, 30 A high speed trench gate field-stop IGBT Datasheet - production data Features TAB High speed switching Tight parameters distribution 3 1 3 Safe paralleling 2 1 D PAK Low thermal resistance TO-220FP Short circuit rated TAB Ultrafast soft recovery antiparallel diode Applications 3 3 I

STGW30N90D 30 A, 900 V very fast IGBT Features Low on-losses Low on-voltage drop (VCE(sat)) High current capability Low gate charge Ideal for soft switching application 3 2 1 Application TO-247 Induction heating Description This IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-off Figure 1. Internal schematic diagram bet

STGB30H60DLFB, STGW30H60DLFB Trench gate field-stop IGBT, HB series 600 V, 30 A high speed Datasheet - production data Features Designed for soft commutation only Maximum junction temperature TJ = 175 C TAB High speed switching series Minimized tail current 3 1 3 VCE(sat) = 1.55 V (typ.) @ IC = 30 A 2 D2PAK 1 Low VF soft recovery co-packaged diode T

STGW30H60DFB, STGWA30H60DFB, STGWT30H60DFB Datasheet Trench gate field-stop 600 V, 30 A high speed HB series IGBT Features Maximum junction temperature TJ = 175 C 3 3 High speed switching series 2 2 1 1 Minimized tail current TO-247 TO-247 long leads Low saturation voltage VCE(sat) = 1.55 V (typ.) @ IC = 30 A TAB Tight parameter distribution Safe para

STGFW30V60F, STGW30V60F, STGWT30V60F Trench gate field-stop IGBT, V series 600 V, 30 A very high speed Datasheet - production data Features Maximum junction temperature TJ = 175 C 1 1 1 Tail-less switching off 3 VCE(sat) = 1.85 V (typ.) @ IC = 30 A 2 1 TO-3PF Tight parameters distribution Tab Safe paralleling Low thermal resistance 3 3 2 2 App

STGW35NB60SD N-CHANNEL 35A - 600V - TO-247 Low Drop PowerMESH IGBT General features VCE(sat) IC VCES Type (Max)@ 25 C @100 C STGW35NB60SD 600V

STGW35NB60S N-channel 35A - 600V - TO-247 Low drop PowerMESH IGBT Features VCE(sat) IC Type VCES (Max)@ 25 C @100 C STGW35NB60S 600V

STGF35HF60W, STGW35HF60W, STGFW35HF60W 35 A, 600 V Ultrafast IGBT Datasheet - production data Features Improved Eoff at elevated temperature Minimal tail current Low conduction losses 3 3 2 2 1 1 Applications TO-247 TO-220FP Welding High frequency converters 1 1 1 Power factor correction 3 2 1 Description TO-3PF This Ultrafast IGBT is develope

STGW30M65DF2, STGWA30M65DF2 Trench gate field-stop IGBTs, M series 650 V, 30 A low-loss in TO-247 and TO-247 long leads packages Datasheet - production data Features 6 s of minimum short-circuit withstand time V = 1.55 V (typ.) @ I = 30 A CE(sat) C Tight parameters distribution Safer paralleling Low thermal resistance Soft and very fast recovery