IKD04N60R - Аналоги. Основные параметры
Наименование: IKD04N60R
Тип транзистора: IGBT
Тип управляющего канала: N
Pc ⓘ - Максимальная рассеиваемая мощность: 75 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic| ⓘ - Максимальный постоянный ток коллектора: 8 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.65 V @25℃
Tj ⓘ - Максимальная температура перехода: 175 ℃
tr ⓘ - Время нарастания типовое: 8 nS
Coesⓘ - Выходная емкость, типовая: 18 pF
Тип корпуса: TO252
Технические параметры IKD04N60R
ikd04n60r.pdf
IGBT IGBT with integrated diode in packages offering space saving advantage IKD04N60R 600V TRENCHSTOPTM RC-Series for hard switching applications Data sheet Industrial Power Control IKD04N60R TRENCHSTOPTM RC-Series for hard switching applications IGBT with integrated diode in packages offering space saving advantage C Features TRENCHSTOPTM Reverse Conducting (RC) technology for 600
ikd04n60ra.pdf
IGBT IGBT with integrated diode in packages offering space saving advantage IKD04N60RA 600V TRENCHSTOPTM RC-Series for hard switching applications Data sheet Industrial Power Control IKD04N60RA TRENCHSTOPTM RC-Series for hard switching applications IGBT with integrated diode in packages offering space saving advantage C Features TRENCHSTOPTM Reverse Conducting (RC) technology for 6
ikd04n60rf.pdf
IGBT IGBT with integrated diode in packages offering space saving advantage IKD04N60RF TRENCHSTOPTM RC-Series for hard switching applications up to 30 kHz Data sheet Industrial Power Control IKD04N60RF TRENCHSTOPTM RC-Drives Fast Series IGBT with integrated diode in packages offering space saving advantage C Features TRENCHSTOPTM Reverse Conducting (RC) technology for 600V applica
ikd04n60rf 1 1.pdf
IGBT IGBT with integrated diode in packages offering space saving advantage IKD04N60RF TRENCHSTOPTM RC-Series for hard switching applications up to 30 kHz Datasheet Industrial & Multimarket IKD04N60RF TRENCHSTOPTM RC-Drives Fast Series IGBT with integrated diode in packages offering space saving advantage C Features TRENCHSTOPTM Reverse Conducting (RC) technology for 600V applicat
Другие IGBT... IHY30N160R2 , IKW15N120H3 , IKW25N120H3 , IKW40N120H3 , IKD10N60R , IKU10N60R , IKD15N60R , IKU15N60R , FGH30S130P , IKU04N60R , IKD06N60R , IKU06N60R , IKW20N60H3 , IKW30N60H3 , IHW40N60RF , IHW30N110R3 , IKW40N60H3 .
History: NGTB40N120L3WG
History: NGTB40N120L3WG
Список транзисторов
Обновления
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
Popular searches
bc558 datasheet | p75nf75 mosfet | ao4407a | mpsa06 datasheet | bc548 pinout | bdw94c | bd140 transistor | 2n2222a datasheet





