IHW30N110R3 - параметры транзистора, его аналоги, Даташиты

IHW30N110R3 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

   Наименование: IHW30N110R3
   Тип транзистора: IGBT + Diode
   Маркировка: H30R1103
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 333 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1100 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 60 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.55 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6.4 V
   Tjⓘ - Максимальная температура перехода: 175 ℃
   Coesⓘ - Выходная емкость, типовая: 55 pF
   Qgⓘ - Общий заряд затвора, typ: 180 nC
   Тип корпуса: TO247

Аналог (замена) для IHW30N110R3

IHW30N110R3 Datasheet (PDF)

..1. Size:1646K infineon
ihw30n110r3 1 2.pdf

IGBTReverse conducting IGBT with monolithic body diodeIHW30N110R31100V TRENCHSTOPTM IH-Series for Soft Switching ApplicationsData sheetIndustrial & MultimarketIHW30N110R3TRENCHSTOPTM IH-Series for Soft Switching ApplicationsReverse conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic body diode with low forward voltagedesigned for soft commutation

..2. Size:2046K infineon
ihw30n110r3.pdf

Resonant Switching SeriesReverse conducting IGBT with monolithic body diodeIHW30N110R3Data sheetIndustrial Power ControlIHW30N110R3Resonant Switching SeriesReverse conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic body diode with low forward voltagedesigned for soft commutation only Very tight parameter distribution High ruggedness, tem

7.1. Size:324K infineon
ihw30n100r.pdf

IHW30N100R Soft Switching Series q Reverse Conducting IGBT with monolithic body diode Features: C 1.5V Forward voltage of monolithic body Diode Full Current Rating of monolithic body Diode Specified for TJmax = 175C GE Trench and Fieldstop technology for 1000 V applications offers : - very tight parameter distribution - high ruggedness, temperature st

7.2. Size:313K infineon
ihw30n100t rev2 7.pdf

IHW30N100T Soft Switching Series q Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with anti-parallel diode Features: C 1.1V Forward voltage of antiparallel rectifier diode Specified for TJmax = 175C TrenchStop and Fieldstop technology for 1000 V applications GE offers : - very tight parameter distribution - high ruggedness, tem

7.3. Size:391K infineon
ihw30n160r2 rev2 1g.pdf

IHW30N160R2 Soft Switching Series TrenchStop Reverse Conducting (RC-)IGBT with monolithic body diode CFeatures: Powerful monolithic Body Diode with very low forward voltage Body diode clamps negative voltages Trench and Fieldstop technology for 1600 V applications offers : GE - very tight parameter distribution - high ruggedness, temperature stable behavior

7.4. Size:1950K infineon
ihw30n120r3.pdf

Resonant Switching SeriesReverse conducting IGBT with monolithic body diodeIHW30N120R3Data sheetIndustrial Power ControlIHW30N120R3Resonant Switching SeriesReverse conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic body diode with low forward voltagedesigned for soft commutation only TRENCHSTOPTM technology offering:- very tight parameter d

7.5. Size:324K infineon
ihw30n100r .pdf

7.6. Size:1768K infineon
ihw30n135r5.pdf

IHW30N135R5Resonant Switching SeriesReverse Conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic body diode with low forward voltagedesigned for soft commutation TRENCHSTOPTM technology offering:- very tight parameter distributionG- high ruggedness, temperature stable behaviorE- low VCEsat- easy parallel switching capability due to positive

7.7. Size:1440K infineon
ihw30n120r5.pdf

IHW30N120R5Resonant Switching SeriesReverse Conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic body diode with low forward voltagedesigned for soft commutation TRENCHSTOPTM technology offering:- very tight parameter distributionG- high ruggedness, temperature stable behaviorE- low VCEsat- easy parallel switching capability due to positive

7.8. Size:1758K infineon
ihw30n160r5.pdf

IHW30N160R5Resonant Switching SeriesReverse conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic body diode with low forward voltage TRENCHSTOPTM technology applications offers:- very tight parameter distribution- high ruggedness, temperature stable behaviorG- low VCEsatE- easy parallel switching capability due to positivetemperature coeffic

7.9. Size:1984K infineon
ihw30n135r3.pdf

Resonant Switching SeriesReverse conducting IGBT with monolithic body diodeIHW30N135R3Data sheetIndustrial Power ControlIHW30N135R3Resonant Switching SeriesReverse conducting IGBT with monolithic body diodeCFeatures: Offers new higher breakdown voltage to 1350V for improvedreliability Powerful monolithic body diode with low forward voltagedesigned for soft commu

7.10. Size:579K infineon
ihw30n120r2.pdf

IHW30N120R2 Resonant Switching Series Reverse Conducting IGBT with monolithic body diode CFeatures: Powerful monolithic body diode with very low forward voltage Body diode clamps negative voltages TM TrenchStop and Fieldstop technology for 1200V applications GEoffers : - very tight parameter distribution - high ruggedness, temperature stable behavior

7.11. Size:360K infineon
ihw30n120r2 rev1 5g.pdf

IHW30N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode CFeatures: Powerful monolithic Body Diode with very low forward voltage Body diode clamps negative voltages TrenchStop and Fieldstop technology for 1200 V applications GEoffers : - very tight parameter distribution - high ruggedness, temperature stable behavior NP

7.12. Size:313K infineon
ihw30n100t.pdf