Справочник IGBT. SGW20N60HS

 

SGW20N60HS Даташит. Аналоги. Параметры и характеристики.


   Наименование: SGW20N60HS
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pc ⓘ - Максимальная рассеиваемая мощность: 178 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic| ⓘ - Максимальный постоянный ток коллектора: 36 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.8 V @25℃
   Tj ⓘ - Максимальная температура перехода: 150 ℃
   tr ⓘ - Время нарастания типовое: 15 nS
   Coesⓘ - Выходная емкость, типовая: 105 pF
   Тип корпуса: TO247
 

 Аналог (замена) для SGW20N60HS

   - подбор ⓘ IGBT транзистора по параметрам

 

SGW20N60HS Datasheet (PDF)

 ..1. Size:382K  infineon
 sgp20n60hs sgw20n60hs rev2 5g.pdf pdf_icon

SGW20N60HS

SGP20N60HS SGW20N60HSHigh Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s GE Designed for operation above 30 kHz NPT-Technology for 600V applications offers: - parallel switching capability PG-TO-220-3-1 PG-TO-247-3 - moderate Eoff increase with temperature - very tight parameter distri

 ..2. Size:354K  infineon
 sgp20n60hs sgw20n60hs rev2.pdf pdf_icon

SGW20N60HS

SGP20N60HS SGW20N60HSHigh Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s GE Designed for operation above 30 kHz NPT-Technology for 600V applications offers: - parallel switching capability PG-TO-220-3-1 PG-TO-247-3 - moderate Eoff increase with temperature - very tight parameter distri

 ..3. Size:383K  infineon
 sgw20n60hs.pdf pdf_icon

SGW20N60HS

SGP20N60HS SGW20N60HSHigh Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s GE Designed for operation above 30 kHz NPT-Technology for 600V applications offers: - parallel switching capability PG-TO-220-3-1 PG-TO-247-3 - moderate Eoff increase with temperature - very tight parameter distri

 6.1. Size:231K  samsung
 sgw20n60ruf.pdf pdf_icon

SGW20N60HS

N-CHANNEL IGBT SGW20N60RUFFEATURESD2-PAK* Short Circuit rated 10uS @Tc=100 * High Speed Switching* Low Saturation Voltage : VCE(sat) = 2.0 V @ Ic=20A* High Input ImpedanceAPPLICATIONSC* AC & DC Motor controls* General Purpose InvertersG* Robotics , Servo Controls* Power Supply* Lamp Ballast EABSOLUTE MAXIMUM RATINGS Symbol Rating UnitsCharacteristicsVCE

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... SGP15N60 , SGP20N60 , SGP30N60 , SGI02N120 , SGP02N120 , SGP07N120 , SGP15N120 , SGB15N60HS , GT30F126 , SGW30N60HS , SGW50N60HS , SGP20N60HS , SGP30N60HS , IGB01N120H2 , IGD01N120H2 , IGA03N120H2 , IGB03N120H2 .

History: CPV364M4UPBF | IRG7PH30K10 | FGW85N60RB | G50T65D | MGF65A6H | TA49123 | CRG40T65AN5HD

 

 
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