SGP30N60HS - аналоги, основные параметры, даташиты
Наименование: SGP30N60HS
Тип транзистора: IGBT
Тип управляющего канала: N
Предельные значения
Pc ⓘ - Максимальная рассеиваемая мощность: 250 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic| ⓘ - Максимальный постоянный ток коллектора: 41 A @25℃
Tj ⓘ - Максимальная температура перехода: 150 ℃
Электрические характеристики
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.8 V @25℃
tr ⓘ - Время нарастания типовое: 21 nS
Coesⓘ - Выходная емкость, типовая: 150 pF
Тип корпуса: TO220
Аналог (замена) для SGP30N60HS
- подбор ⓘ IGBT транзистора по параметрам
SGP30N60HS даташит
sgp30n60hs.pdf
SGP30N60HS SGW30N60HS High Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s G E Designed for operation above 30 kHz NPT-Technology for 600V applications offers - parallel switching capability PG-TO-220-3-1 PG-TO-247-3 - moderate Eoff increase with temperature - very tight parameter distribut
sgp30n60hs sgw30n60hs rev2.pdf
SGP30N60HS SGW30N60HS High Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s G E Designed for operation above 30 kHz NPT-Technology for 600V applications offers - parallel switching capability PG-TO-220-3-1 PG-TO-247-3 - moderate Eoff increase with temperature - very tight parameter distribut
sgp30n60hs sgw30n60hs rev2 4g.pdf
SGP30N60HS SGW30N60HS High Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s G E Designed for operation above 30 kHz NPT-Technology for 600V applications offers - parallel switching capability PG-TO-220-3-1 PG-TO-247-3 - moderate Eoff increase with temperature - very tight parameter distribut
sgp30n60 sgw30n60 rev2 5g.pdf
SGP30N60 SGW30N60 Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s G E Designed for - Motor controls - Inverter NPT-Technology for 600V applications offers - very tight parameter distribution - high ruggedness, temperature stable behaviour - paral
Другие IGBT... SGP02N120 , SGP07N120 , SGP15N120 , SGB15N60HS , SGW20N60HS , SGW30N60HS , SGW50N60HS , SGP20N60HS , RJP63F3DPP-M0 , IGB01N120H2 , IGD01N120H2 , IGA03N120H2 , IGB03N120H2 , IGW03N120H2 , IGP01N120H2 , IGP03N120H2 , IGW25N120H3 .
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