Справочник IGBT. IGW50N60T

 

IGW50N60T - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: IGW50N60T
   Тип транзистора: IGBT
   Маркировка: G50T60
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 333 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 90 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.5 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 5.7 V
   Tjⓘ - Максимальная температура перехода: 175 ℃
   trⓘ - Время нарастания типовое: 29 nS
   Coesⓘ - Выходная емкость, типовая: 200 pF
   Qgⓘ - Общий заряд затвора, typ: 310 nC
   Тип корпуса: TO247

 Аналог (замена) для IGW50N60T

 

 

IGW50N60T Datasheet (PDF)

 ..1. Size:448K  infineon
igp50n60t igw50n60t rev2 6g.pdf

IGW50N60T
IGW50N60T

IGP50N60T TrenchStop Series IGW50N60TLow Loss IGBT in TrenchStop and Fieldstop technology C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s G Designed for : E - Frequency Converters - Uninterrupted Power Supply TrenchStop and Fieldstop technology for 600 V applications offers : P

 ..2. Size:461K  infineon
igw50n60t.pdf

IGW50N60T
IGW50N60T

IGW50N60T TRENCHSTOP Series Low Loss IGBT : IGBT in TRENCHSTOP and Fieldstop technology CFeatures: Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175C G Short circuit withstand time 5s E Designed for : - Frequency Converters - Uninterrupted Power Supply TRENCHSTOP and Fieldstop technology for 600V applications offers :

 0.1. Size:1457K  infineon
igw50n60tp.pdf

IGW50N60T
IGW50N60T

IGBTTRENCHSTOPTM Performance technologyIGW50N60TP600V IGBT TRENCHSTOPTM Performance seriesData sheetIndustrial Power ControlIGW50N60TPTRENCHSTOPTM Performance SeriesHigh speed IGBT in Trench and Fieldstop technologyFeatures: CTRENCHSTOPTM technology offering very low VCEsat low turn-off losses short tail current low EMI G maximum junction temperat

 6.1. Size:1988K  infineon
igw50n60h3.pdf

IGW50N60T
IGW50N60T

IGBTHigh speed IGBT in Trench and Fieldstop technologyIGW50N60H3600V high speed switching series third generationData sheetIndustrial Power ControlIGW50N60H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyFeatures: CTRENCHSTOPTM technology offering very low VCEsat low EMI Very soft, fast recovery anti-parallel d

 6.2. Size:1559K  infineon
igw50n60h3 rev1 2g.pdf

IGW50N60T
IGW50N60T

IGBTHigh speed IGBT in Trench and Fieldstop technologyIGW50N60H3600V high speed switching series third generationDatasheetIndustrial & MultimarketIGW50N60H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyFeatures: CTRENCHSTOPTM technology offering very low VCEsat low EMI maximum junction temperature 175C G

Другие IGBT... IGW25T120 , IGW60T120 , IGD06N60T , IGB15N60T , SIW75N65G2L2A , IGP30N60T , BSM50GAL120DN2 , IGB50N60T , RJH3047 , IGW75N60T , IGB10N60T , IGP06N60T , IGP10N60T , IGP15N60T , IGP50N60T , AUIRG4BC30S-S , AUIRG4BC30S-SL .

 

 
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