Справочник IGBT. AUIRG4BC30S-S

 

AUIRG4BC30S-S - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: AUIRG4BC30S-S
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 100 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 34 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.4 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6 V
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 18 nS
   Coesⓘ - Выходная емкость, типовая: 72 pF
   Qgⓘ - Общий заряд затвора, typ: 50 nC
   Тип корпуса: D2PAK

 Аналог (замена) для AUIRG4BC30S-S

 

 

AUIRG4BC30S-S Datasheet (PDF)

 ..1. Size:301K  international rectifier
 auirg4bc30s-s.pdf

AUIRG4BC30S-S AUIRG4BC30S-S

AUTOMOTIVE GRADEPD - 96340AUIRG4BC30S-SAUIRG4BC30S-SLStandard Speed IGBTINSULATED GATE BIPOLAR TRANSISTORCVCES = 600VFeatures Standard: optimized for minimum saturationVCE(on) typ. = 1.4VGvoltage and low operating frequencies (

 ..2. Size:301K  infineon
 auirg4bc30s-s auirg4bc30s-sl.pdf

AUIRG4BC30S-S AUIRG4BC30S-S

AUTOMOTIVE GRADEPD - 96340AUIRG4BC30S-SAUIRG4BC30S-SLStandard Speed IGBTINSULATED GATE BIPOLAR TRANSISTORCVCES = 600VFeatures Standard: optimized for minimum saturationVCE(on) typ. = 1.4VGvoltage and low operating frequencies (

 4.1. Size:324K  international rectifier
 auirg4bc30u-s.pdf

AUIRG4BC30S-S AUIRG4BC30S-S

PD - 96335AUTOMOTIVE GRADEAUIRG4BC30U-SAUIRG4BC30U-SLUltraFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORCVCES = 600VFeaturesVCE(on) typ. = 1.95VG UltraFast: Optimized for high operatingfrequencies 8-40 kHz in hard switching,E@VGE = 15V, IC = 12A>200 kHz in resonant mode n-channel Industry standard D2Pak & TO-262 package Lead-Free, RoHS Compliant

 8.1. Size:408K  international rectifier
 auirg4pc40s-e.pdf

AUIRG4BC30S-S AUIRG4BC30S-S

AUTOMOTIVE GRADE AUIRG4PC40S-E Insulated Gate Bipolar Transistor CVCES = 600V Features VCE(ON) typ. = 1.32V G Standard: Optimized for minimum saturation voltage E and low operating frequencies (

 8.2. Size:295K  international rectifier
 auirg4ph50s.pdf

AUIRG4BC30S-S AUIRG4BC30S-S

AUTOMOTIVE GRADEAUIRG4PH50SINSULATED GATE BIPOLAR TRANSISTORCVCES = 1200VFeaturesIC = 81A@ TC = 100C Standard: Optimized for minimum saturationGvoltage and low operating frequencies (

 8.3. Size:398K  infineon
 auirg4pc40s-e.pdf

AUIRG4BC30S-S AUIRG4BC30S-S

AUTOMOTIVE GRADE AUIRG4PC40S-E Insulated Gate Bipolar Transistor CVCES = 600V Features VCE(ON) typ. = 1.32V G Standard: Optimized for minimum saturation voltage E and low operating frequencies (

 8.4. Size:280K  infineon
 auirg4ph50s.pdf

AUIRG4BC30S-S AUIRG4BC30S-S

AUTOMOTIVE GRADEAUIRG4PH50SINSULATED GATE BIPOLAR TRANSISTORCVCES = 1200VFeaturesIC = 81A@ TC = 100C Standard: Optimized for minimum saturationGvoltage and low operating frequencies (

Другие IGBT... IGB50N60T , IGW50N60T , IGW75N60T , IGB10N60T , IGP06N60T , IGP10N60T , IGP15N60T , IGP50N60T , FGH75T65UPD , AUIRG4BC30S-SL , AUIRG4BC30U-S , AUIRG4BC30U-SL , AUIRG4PH50S , AUIRGB4062D , AUIRGP35B60PD , AUIRGP35B60PD-E , AUIRGP4062D .

 

 
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