IRG4BH20K-L - аналоги и описание IGBT

PD -93961 IRG4BH20K-L Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT C Features High short circuit rating optimized for motor control, VCES = 1200V tsc =10 s, VCC = 720V , TJ = 125 C, VGE = 15V Combines low conduction losses with high VCE(on) typ. = 3.17V G switching speed Latest generation design provides tighter parameter @VGE = 15V, IC =

PD -93960 IRG4BH20K-S Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT C Features High short circuit rating optimized for motor control, VCES = 1200V tsc =10 s @ VCC = 720V , TJ = 125 C, VGE = 15V Combines low conduction losses with high VCE(on) typ. = 3.17V G switching speed Latest generation design provides tighter parameter @VGE = 15V, IC

PD- 91793 IRG4BC20SD Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features Extremely low voltage drop 1.4Vtyp. @ 10A VCES = 600V S-Series Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 VCE(on) typ. = 1.4V KHz in brushless DC drives. G Very Tig

PD -93769 PROVISIONAL IRG4BAC50W INSULATED GATE BIPOLAR TRANSISTOR C Features Designed expressly for switch-mode power VCES = 600V supply and PFC (power factor correction) applications Industry-benchmark switching losses improve VCE(on) max. = 2.30V G efficiency of all power supply topologies 50% reduction of Eoff parameter @VGE = 15V, IC = 27A E Low IGBT con

PD -91734B IRG4BC10KD INSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit Rated ULTRAFAST SOFT RECOVERY DIODE UltraFast IGBT C Features High short circuit rating optimized for motor control, VCES = 600V tsc =10 s, @360V VCE (start), TJ = 125 C, VGE = 15V VCE(on) typ. = 2.39V Combines low conduction losses with high G switching speed Tighter parameter distribut

PD - 94255 IRG4BC10SD-S IRG4BC10SD-L INSULATED GATE BIPOLAR TRANSISTOR WITH Standard Speed ULTRAFAST SOFT RECOVERY DIODE CoPack IGBT Features C Extremely low voltage drop 1.1Vtyp. @ 2A S-Series Minimizes power dissipation at up to 3 VCES = 600V KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives. VCE(on) typ. = 1.10V Very Tight Vce(on) distrib

PD - 91786B IRG4BC10S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Extremely low voltage drop; 1.1V typical at 2A S-Speed Minimizes power dissipation at up to 3 VCES = 600V KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives, up to 2KHz in VCE(on) typ. = 1.10V Chopper Applications G Very Tight Vce(on) distribution Indust

PD -91451B IRG4BC30FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features Fast Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). VCE(on) typ. = 1.59V Generation 4 IGBT design provides tighter G parameter distribution and hig

PD -95965 IRG4BC20FD-SPbF INSULATED GATE BIPOLAR TRANSISTOR WITH Fast CoPack IGBT ULTRAFAST SOFT RECOVERY DIODE Features Fast Optimized for medium operating C frequencies ( 1-5 kHz in hard switching, >20 VCES = 600V kHz in resonant mode). Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than VCE(on) typ. = 1.66V G Generation 3

IRG4BC30W-S INSULATED GATE BIPOLAR TRANSISTOR Features C Designed expressly for Switch-Mode Power VCES = 600V Supply and PFC (power factor correction) applications Industry-benchmark switching losses improve VCE(on) typ. = 2.10V G efficiency of all power supply topologies 50% reduction of Eoff parameter @VGE = 15V, IC = 12A E Low IGBT conduction losses n-channe

PD - 95788B IRG4BC40WSPbF IRG4BC40WLPbF INSULATED GATE BIPOLAR TRANSISTOR Features Designed expressly for Switch-Mode Power C Supply and PFC (power factor correction) applications VCES = 600V Industry-benchmark switching losses improve efficiency of all power supply topologies VCE(on) typ. = 2.05V G 50% reduction of Eoff parameter Low IGBT conduction losses @VG

PD - 94069 IRG4BC30S-S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Standard optimized for minimum saturation VCES = 600V voltage and low operating frequencies (

PD - 94909A IRG4BC20UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST UltraFast CoPack IGBT SOFT RECOVERY DIODE Features C UltraFast optimized for high operating frequencies 8-40 kHz in hard switching, >200 VCES = 600V kHz in resonant mode Generation 4 IGBT design provides tighter VCE(on) typ. = 1.85V parameter distribution and higher efficiency than G Generati

AUTOMOTIVE GRADE PD - 96340 AUIRG4BC30S-S AUIRG4BC30S-SL Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR C VCES = 600V Features Standard optimized for minimum saturation VCE(on) typ. = 1.4V G voltage and low operating frequencies (

D IRG4BC10K Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features C Short Circuit Rated UltraFast Optimized for high VCES = 600V operating frequencies >5.0 kHz , and Short Circuit Rated to 10 s @ 125 C, VGE = 15V Generation 4 IGBT design provides higher efficiency VCE(on) typ. = 2.39V G than Generation 3 Industry standard TO-220

PD - 94255 IRG4BC10SD-S IRG4BC10SD-L INSULATED GATE BIPOLAR TRANSISTOR WITH Standard Speed ULTRAFAST SOFT RECOVERY DIODE CoPack IGBT Features C Extremely low voltage drop 1.1Vtyp. @ 2A S-Series Minimizes power dissipation at up to 3 VCES = 600V KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives. VCE(on) typ. = 1.10V Very Tight Vce(on) distrib

D I I T I T D T I T I T Features C Features Features Features Features UltraFast optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter VCE(on) typ. = 1.95V G parameter distribution and higher efficiency than Generation

D I Short Circuit Rated I T D T I T I T UltraFast IGBT Features Features Features Features Features C High short circuit rating optimized for motor control, VCES = 600V tsc =10 s, @360V VCE (start), TJ = 125 C, VGE = 15V Combines low conduction losses with high VCE(on) typ. = 2.21V G switching speed Latest generation design

PD - 93771 PROVISIONAL IRG4BAC50S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Standard Optimized for minimum saturation VCES = 600V voltage and low operating frequencies (

D D I I T I T D T I T I T Features Features Features Features Features C UltraFast optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter VCE(on) typ. = 1.85V G parameter distribution and higher efficiency than Generatio

PD - 94083A IRG4BC15UD-S IRG4BC15UD-L INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast CoPack IGBT ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 600V UltraFast Optimized for high frequencies from10 to 30 kHz in hard switching VCE(on) typ. = 2.02V IGBT Co-packaged with ultra-soft-recovery G antiparallel diode Industry standard D2Pak & TO-262 packages @VGE = 15V,

PD - 94773 IRG4BC30FD1 Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH C HYPERFAST DIODE VCES = 600V Features Fast optimized for medium operating frequencies (1-5 kHz in hard switching, >20kHz in resonant mode). VCE(on) typ. = 1.59V G Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than @VGE = 15V, IC = 17A Generation 3.

D I Short Circuit Rated I T D T I T I T UltraFast IGBT Features Features Features Features Features C High short circuit rating optimized for motor control, VCES = 600V tsc =10 s, @360V VCE (start), TJ = 125 C, VGE = 15V Combines low conduction losses with high VCE(on) typ. = 2.27V switching speed G Latest generation design

AUTOMOTIVE GRADE PD - 96340 AUIRG4BC30S-S AUIRG4BC30S-SL Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR C VCES = 600V Features Standard optimized for minimum saturation VCE(on) typ. = 1.4V G voltage and low operating frequencies (

PD -91784B IRG4BC10SD Standard Speed CoPack INSULATED GATE BIPOLAR TRANSISTOR WITH IGBT ULTRAFAST SOFT RECOVERY DIODE C Features Extremely low voltage drop 1.1Vtyp. @ 2A VCES = 600V S-Series Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives. VCE(on) typ. = 1.10V Very Tight Vce(on) distribution G IGB

PD - 96335 AUTOMOTIVE GRADE AUIRG4BC30U-S AUIRG4BC30U-SL UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR C VCES = 600V Features VCE(on) typ. = 1.95V G UltraFast Optimized for high operating frequencies 8-40 kHz in hard switching, E @VGE = 15V, IC = 12A >200 kHz in resonant mode n-channel Industry standard D2Pak & TO-262 package Lead-Free, RoHS Compliant

PD 91677B IRG4BC10UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features Features Features Features Features UltraFast Optimized for high operating up to 80 kHz in hard switching, >200 kHz in VCE(on) typ. = 2.15V resonant mode G Generation 4 IGBT design provides tighter @VGE = 15V, IC = 5.0A parameter

PD - 95788B IRG4BC40WSPbF IRG4BC40WLPbF INSULATED GATE BIPOLAR TRANSISTOR Features Designed expressly for Switch-Mode Power C Supply and PFC (power factor correction) applications VCES = 600V Industry-benchmark switching losses improve efficiency of all power supply topologies VCE(on) typ. = 2.05V G 50% reduction of Eoff parameter Low IGBT conduction losses @VG

PD - 91455B IRG4BC40S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Features Features Features Features Standard optimized for minimum saturation VCES = 600V voltage and low operating frequencies (

PD-95640 IRG4BC20W INSULATED GATE BIPOLAR TRANSISTOR Features C Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) VCES = 600V applications Industry-benchmark switching losses improve VCE(on) typ. = 2.16V efficiency of all power supply topologies G 50% reduction of Eoff parameter Low IGBT conduction losses @VGE = 15V, IC = 6.5A E

D I Short Circuit Rated I T D T I T I T UltraFast IGBT Features Features Features Features Features C High short circuit rating optimized for motor control, VCES = 600V tsc =10 s, @360V VCE (start), TJ = 125 C, VGE = 15V Combines low conduction losses with high VCE(on) typ. = 2.21V switching speed G Latest generation desig

PD -94910A IRG4BC30KDPbF Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast IGBT Features C High short circuit rating optimized for motor control, VCES = 600V tsc =10 s, @360V VCE (start), TJ = 125 C, VGE = 15V Combines low conduction losses with high VCE(on) typ. = 2.21V G switching speed tighter parameter distribu

D I I T I T D T I T I T Features C Features Features Features Features UltraFast optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter VCE(on) typ. = 1.72V G parameter distribution and higher efficiency than Generation

PD - 94083A IRG4BC15UD-S IRG4BC15UD-L INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast CoPack IGBT ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 600V UltraFast Optimized for high frequencies from10 to 30 kHz in hard switching VCE(on) typ. = 2.02V IGBT Co-packaged with ultra-soft-recovery G antiparallel diode Industry standard D2Pak & TO-262 packages @VGE = 15V,

D I Short Circuit Rated I T D T I T I T UltraFast IGBT C Features Features Features Features Features Short Circuit Rated UltraFast optimized for high VCES = 600V operating frequencies >5.0 kHz , and Short Circuit Rated to 10 s @ 125 C, VGE = 15V VCE(on) typ. = 2.1V Generation 4 IGBT design provides higher efficiency G than Gen

PD -91594C IRG4BC30KD-S Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast IGBT ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features High short circuit rating optimized for motor control, VCES = 600V tsc =10 s, @360V VCE (start), TJ = 125 C, VGE = 15V VCE(on) typ. = 2.21V Combines low conduction losses with high G switch

PD -94116 IRG4BC20MD-S Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR WITH Fast IGBT ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features Rugged 10 sec short circuit capable at VGS=15V VCES = 600V Low VCE(on) for 4 to 10kHz applications IGBT Co-packaged with ultra-soft-recovery antiparallel diode VCE(on) typ. = 1.85V G Industry

PD -91594C IRG4BC30KD-S Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast IGBT ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features High short circuit rating optimized for motor control, VCES = 600V tsc =10 s, @360V VCE (start), TJ = 125 C, VGE = 15V VCE(on) typ. = 2.21V Combines low conduction losses with high G switch

IRG4BC20FDPbF Fast CoPack IGBT Features C = G

PD - 94076 IRG4BC20W-S INSULATED GATE BIPOLAR TRANSISTOR Features C Features Features Features Features Designed expressly for Switch-Mode Power VCES = 600V Supply and PFC (power factor correction) applications Industry-benchmark switching losses improve VCE(on) typ. = 2.16V G efficiency of all power supply topologies 50% reduction of Eoff parameter @VGE = 15V, I

PD -91598A IRG4BC20KD-S INSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit Rated ULTRAFAST SOFT RECOVERY DIODE UltraFast IGBT Features Features Features Features Features C Short Circuit Rated UltraFast Optimized for VCES = 600V high operating frequencies >5.0 kHz , and Short Circuit Rated to 10 s @ 125 C, VGE = 15V Generation 4 IGBT design provides tighter VCE(on)

D I Short Circuit Rated I T D T I T I T UltraFast IGBT Features Features Features Features Features C High short circuit rating optimized for motor control, tsc =10 s, @360V VCE (start), TJ = 125 C, VCES = 600V VGE = 15V Combines low conduction losses with high VCE(on) typ. = 2.27V switching speed G Latest generation desig

PD-91449C IRG4BC20UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features UltraFast Optimized for high operating frequencies VCES = 600V 8-40 kHz in hard switching, >200kHz in resonant mode VCE(on) typ. = 1.85V Generation 4 IGBT design provides tighter para- G meter distribution and higher efficiency than Generation 3

IRG4BC20KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit Rated ULTRAFAST SOFT RECOVERY DIODE UltraFast IGBT Features C GE =

PD - 91803 IRG4BC30U-S UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C UltraFast Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter VCE(on) typ. = 1.95V G parameter distribution and higher efficiency than Generation 3 @VGE = 15V, IC = 12A E Indust

D I I T I T D T I T I T Features C Standard optimized for minimum saturation VCES = 600V voltage and low operating frequencies (

PD- 94077 IRG4BC20UD-S UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features UltraFast Optimized for high operating frequencies VCES = 600V 8-40 kHz in hard switching, >200kHz in resonant mode VCE(on) typ. = 1.85V Generation 4 IGBT design provides tighter para- G meter distribution

D I I T I T D T I T I T Features C Features Features Features Features Standard optimized for minimum saturation VCES = 600V voltage and low operating frequencies (

D I I T I T D T I T I T Features C Features Features Features Features Fast optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighter VCE(on) typ. = 1.50V G parameter distribution and higher efficiency than Generation 3 @VG

D I I T D T I T I T Features C Features Features Features Features Designed expressly for Switch-Mode Power VCES = 600V Supply and PFC (power factor correction) applications Industry-benchmark switching losses improve VCE(on) max. = 2.70V G efficiency of all power supply topologies 50% reduction of Eoff parameter @VGE = 15V, IC

PD 91453B IRG4BC30UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features UltraFast Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode VCE(on) typ. = 1.95V Generation 4 IGBT design provides tighter G parameter distribution an

PD - 91654A IRG4BC40W INSULATED GATE BIPOLAR TRANSISTOR Features C Features Features Features Features Designed expressly for Switch-Mode Power VCES = 600V Supply and PFC (power factor correction) applications Industry-benchmark switching losses improve VCE(on) typ. = 2.05V G efficiency of all power supply topologies 50% reduction of Eoff parameter @VGE = 15V, IC

PD - 96929 IRG4BC30FD-S Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH C HYPERFAST DIODE VCES = 600V Features VCE(on) typ. = 1.59V Fast optimized for medium operating frequencies G (1-5 kHz in hard switching, >20kHz in resonant mode). Generation 4 IGBT design provides tighter @VGE = 15V, IC = 17A E parameter distribution and higher efficiency than Generation

PD -91599A IRG4BC20KD INSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit Rated ULTRAFAST SOFT RECOVERY DIODE UltraFast IGBT Features Features Features Features Features C Short Circuit Rated UltraFast Optimized for VCES = 600V high operating frequencies >5.0 kHz , and Short Circuit Rated to 10 s @ 125 C, VGE = 15V Generation 4 IGBT design provides tighter VCE(on

PD -94115 IRG4BC20MD Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR WITH Fast IGBT ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features Rugged 10 sec short circuit capable at VGS=15V VCES = 600V Low VCE(on) for 4 to 10kHz applications IGBT Co-packaged with ultra-soft-recovery antiparallel diode VCE(on) typ. = 1.85V G Industry s

D I I T I T D T I T I T Features C Features Features Features Features Fast Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighter VCE(on) typ. = 1.66V G parameter distribution and higher efficiency than Generation 3 @VG

PD-94810A IRG4BC30UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast CoPack IGBT ULTRAFAST SOFT RECOVERY DIODE Features UltraFast Optimized for high operating C frequencies 8-40 kHz in hard switching, >200 VCES = 600V kHz in resonant mode Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than VCE(on) typ. = 1.95V G Generation

D I I T I T D T I T I T Features C Features Features Features Features Fast optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighter VCE(on) typ. = 1.59V G parameter distribution and higher efficiency than Generation 3 @VG

PD - 94082A IRG4BC15UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 600V UltraFast Optimized for high frequencies from10 to 30 kHz in hard switching VCE(on) typ. = 2.02V IGBT Co-packaged with ultra-soft-recovery G antiparallel diode Industry standard TO-220AB package @VGE = 15V, IC = 7.8A E n-channe

PD -91794 IRG4BC20SD-S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features Extremely low voltage drop 1.4Vtyp. @ 10A VCES = 600V S-Series Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 VCE(on) typ. = 1.4V KHz in brushless DC drives. G Very T

PD- 94151A IRG4BC15MD Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR WITH Fast IGBT ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features Rugged 10 sec short circuit capable at VGS = 15V VCES = 600V Low VCE(on) for 4 to 10kHz applications IGBT co-packaged with ultra-soft-recovery anti-parallel diodes VCE(on) typ. = 1.88V G Indus