IRG4IBC10UD - аналоги и описание IGBT

PD - 93765 IRG4IBC10UD INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast Co-Pack IGBT ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features UltraFast Optimized for high operating up to VCE(on) typ. = 2.15V 80 kHz in hard switching, > 200 kHz in resonant mode G Generation 4 IGBT design provides tighter @VGE = 15V, IC = 5.0A parameter distribution and higher efficiency th

PD 91785A IRG4IBC20W INSULATED GATE BIPOLAR TRANSISTOR Features C Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications VCES = 600V 2.5kV, 60s insulation voltage V Industry-benchmark switching losses improve VCE(on) typ. = 2.16V G efficiency of all power supply topologies 50% reduction of Eoff parameter @VGE = 15V, IC = 6

PD -91690A IRG4IBC30KD INSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit Rated ULTRAFAST SOFT RECOVERY DIODE UltraFast IGBT Features Features Features Features Features C High switching speed optimized for up to 25kHz VCES = 600V with low VCE(on) Short Circuit Rating 10 s @ 125 C, VGE = 15V Generation 4 IGBT design provides tighter VCE(on) typ. = 2.21V para

PD- 91751A IRG4IBC30FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features Very Low 1.59V votage drop VCES = 600V 2.5kV, 60s insulation voltage U 4.8 mm creapage distance to heatsink VCE(on) typ. = 1.59V Fast Optimized for medium operating G frequencies ( 1-5 kHz in hard switchi

PD 91791A IRG4IBC30W INSULATED GATE BIPOLAR TRANSISTOR Features C Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications VCES = 600V 2.5kV, 60s insulation voltage V Industry-benchmark switching losses improve VCE(on) typ. = 2.1V G efficiency of all power supply topologies 50% reduction of Eoff parameter @VGE = 15V, IC = 12

PD -91752A IRG4IBC20UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features 2.5kV, 60s insulation voltage VCES = 600V 4.8 mm creapage distance to heatsink UltraFast Optimized for high operating VCE(on) typ. = 1.85V frequencies 8-40 kHz in hard switching, >200 G kHz in resonant mode IGBT co-packaged with HEXF

PD - 94293 IRG4IBC30S INSULATED GATE BIPOLAR TRANSISTOR Features C Features Features Features Features Standard Optimized for minimum saturation VCES = 600V voltage and low operating freqencies (

PD -91689A IRG4IBC20KD INSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit Rated ULTRAFAST SOFT RECOVERY DIODE UltraFast IGBT Features Features Features Features Features C High switching speed optimized for up to 25kHz VCES = 600V with low VCE(on) Short Circuit Rating 10 s @ 125 C, VGE = 15V Generation 4 IGBT design provides tighter VCE(on) typ. = 2.27V para

PD -91750A IRG4IBC20FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features Very Low 1.66V votage drop VCES = 600V 2.5kV, 60s insulation voltage U 4.8 mm creapage distance to heatsink VCE(on) typ. = 1.66V Fast Optimized for medium operating G frequencies ( 1-5 kHz in hard switchi

PD91753A IRG4IBC30UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features 2.5kV, 60s insulation voltage U VCES = 600V 4.8 mm creapage distance to heatsink UltraFast Optimized for high operating VCE(on) typ. = 1.95V frequencies 8-40 kHz in hard switching, >200 G kHz in resonant m