IRG4PH40UD2-E Даташит. Аналоги. Параметры и характеристики.
Наименование: IRG4PH40UD2-E
Тип транзистора: IGBT
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 160 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 41 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.43 V @25℃
Tjⓘ - Максимальная температура перехода: 150 ℃
trⓘ - Время нарастания типовое: 26 nS
Coesⓘ - Выходная емкость, типовая: 99 pF
Тип корпуса: TO247
- подбор IGBT транзистора по параметрам
IRG4PH40UD2-E Datasheet (PDF)
irg4ph40ud2-e.pdf

PD - 96781AIRG4PH40UD2-E UltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeatures UltraFast IGBT optimized for high operatingVCES = 1200V frequencies up to 200kHz in resonant mode IGBT co-packaged with HEXFREDTM ultrafastVCE(on) typ. = 2.43V ultra-soft-recovery anti-parallel diode for use inG resonant circuits Indus
irg4ph40ud.pdf

PD- 91621CIRG4PH40UD UltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeatures UltraFast: Optimized for high operatingVCES = 1200V frequencies up to 40 kHz in hard switching, >200 kHz in resonant modeVCE(on) typ. = 2.43V New IGBT design provides tighterG parameter distribution and higher efficiency than previous generat
irg4ph40u.pdf

D I I TI T D T I T I T Features CFeaturesFeaturesFeaturesFeatures UltraFast: Optimized for high operatingVCES = 1200V frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode New IGBT design provides tighterVCE(on) typ. = 2.43VG parameter distribution and higher efficiency than previous gene
irg4ph40kd.pdf

PD- 91577BIRG4PH40KDShort Circuit RatedINSULATED GATE BIPOLAR TRANSISTOR WITHUltraFast IGBTULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures High short circuit rating optimized for motor control, VCES = 1200V tsc =10s, VCC = 720V , TJ = 125C, VGE = 15VVCE(on) typ. = 2.74V Combines low conduction losses with highG switching speed
Другие IGBT... IRG4BH20K-S , IRG4IBC10UD , IRG4IBC30S , IRG4PC20U , IRG4PC50F-E , IRG4PC50SD , IRG4PC60F , IRG4PC60U-P , FGPF4536 , IRG4PH50S-E , IRG4PSH71U , IRG4PSH71UD , IRG4RC20F , IRG6B330UD , IRG6I320U , IRG6I330U , IRG6IC30U .
History: HGT1S12N60C3S9A | IRG4BH20K-S | IXSH35N120B | APT44GA60BD30C | IRGS14C40L | IRG4PH50S-E | IXGH12N60C
History: HGT1S12N60C3S9A | IRG4BH20K-S | IXSH35N120B | APT44GA60BD30C | IRGS14C40L | IRG4PH50S-E | IXGH12N60C



Список транзисторов
Обновления
IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
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