IRG7PH50U
Даташит. Аналоги. Параметры и характеристики.
Наименование: IRG7PH50U
Тип транзистора: IGBT
Тип управляющего канала: N
Pcⓘ -
Максимальная рассеиваемая мощность: 556
W
|Vce|ⓘ -
Предельно-допустимое напряжение коллектор-эмиттер: 1200
V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 30
V
|Ic|ⓘ - Максимальный постоянный ток коллектора:
140
A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое:
1.7
V @25℃
Tjⓘ - Максимальная температура перехода:
175
℃
trⓘ -
Время нарастания типовое: 40
nS
Coesⓘ - Выходная емкость, типовая: 190
pF
Тип корпуса:
TO247
- подбор IGBT транзистора по параметрам
IRG7PH50U
Datasheet (PDF)
..1. Size:361K international rectifier
irg7ph50u.pdf 

PD - 97549IRG7PH50UPbFINSULATED GATE BIPOLAR TRANSISTORIRG7PH50U-EPFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Maximum junction temperature 175 CIC = 90A, TC = 100C Square RBSOA 100% of the parts tested for ILM GTJ(max) =175C Positive VCE (ON) temperature co-efficientE Tight parameter distributionVCE
0.1. Size:361K international rectifier
irg7ph50u-e.pdf 

PD - 97549IRG7PH50UPbFINSULATED GATE BIPOLAR TRANSISTORIRG7PH50U-EPFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Maximum junction temperature 175 CIC = 90A, TC = 100C Square RBSOA 100% of the parts tested for ILM GTJ(max) =175C Positive VCE (ON) temperature co-efficientE Tight parameter distributionVCE
6.1. Size:561K international rectifier
irg7ph50k10d.pdf 

IRG7PH50K10DPbF IRG7PH50K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C C VCES = 1200V C IC = 50A, TC =100C tSC 10s, TJ(max) = 150C GC E G VCE(ON) typ. = 1.9V @ IC = 35A C E E G n-channelIRG7PH50K10DPbFIRG7PH50K10DEPbFApplications Industrial Motor Drive G C E UPS Gate Collector Emitter So
8.1. Size:299K international rectifier
irg7ph42u-ep.pdf 

PD - 96233BIRG7PH42UPbFINSULATED GATE BIPOLAR TRANSISTORIRG7PH42U-EPFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Maximum junction temperature 175 CIC = 60A, TC = 100C Square RBSOA 100% of the parts tested for ILM GTJ(max) =175C Positive VCE (ON) temperature co-efficientE Tight parameter distributionVC
8.2. Size:374K international rectifier
irg7ph35u.pdf 

PD - 97479IRG7PH35UPbFINSULATED GATE BIPOLAR TRANSISTORIRG7PH35U-EPFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Maximum junction temperature 175 CI NOMINAL = 20A Square RBSOA 100% of the parts tested for ILMGTJ(max) = 175C Positive VCE (ON) temperature co-efficient Tight parameter distributionEVCE(on)
8.3. Size:300K international rectifier
irg7ph35ud1m.pdf 

IRG7PH35UD1MPbFINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODEFOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONSFeaturesC Low VCE (ON) trench IGBT TechnologyVCES = 1200V Low Switching Losses Square RBSOAIC = 25A, TC = 100C Ultra-Low VF Diode 1300Vpk Repetitive Transient CapacityGTJ(max) = 150C 100% of the Parts Tested for ILM
8.4. Size:399K international rectifier
irg7ph28ud1.pdf 

IRG7PH28UD1PbF IRG7PH28UD1MPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS CVCES = 1200V Features Low VCE (ON) trench IGBT technology IC = 15A, TC = 100C Low switching losses TJ(MAX) = 150C G Square RBSOA Ultra-low VF diode VCE(ON) typ. = 1.95V E 1300Vpk repetitiv
8.5. Size:462K international rectifier
irg7ph35udpbf irg7ph35ud-ep.pdf 

PD-96288IRG7PH35UDPbFINSULATED GATE BIPOLAR TRANSISTOR WITHIRG7PH35UD-EPULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Square RBSOAI NOMINAL = 20A 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficientGTJ(max) = 150C Ultra fast soft recovery co-pak diode T
8.6. Size:326K international rectifier
irg7ph35ud1.pdf 

IRG7PH35UD1PbFIRG7PH35UD1-EPINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODEFOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONSFeaturesCVCES = 1200V Low VCE (ON) trench IGBT Technology Low Switching LossesI NOMINAL = 20A Square RBSOA Ultra-Low VF DiodeGTJ(max) = 150C 1300Vpk Repetitive Transient Capacity 100% of the Parts Tested for I
8.7. Size:435K international rectifier
irg7ph42ud-ep.pdf 

PD - 97391BIRG7PH42UDPbFINSULATED GATE BIPOLAR TRANSISTOR WITHIRG7PH42UD-EPULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Square RBSOAIC = 45A, TC = 100C 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficientG TJ(max) = 150C Ultra fast soft recovery co-pak diod
8.8. Size:437K international rectifier
irg7ph30k10d.pdf 

PD - 97403IRG7PH30K10DPbFINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE (ON) Trench IGBT TechnologyVCES = 1200V Low switching losses 10 S short circuit SOAIC = 16A, TC = 100C Square RBSOA 100% of the parts tested for ILM G tSC 10s, TJ(max) = 150C Positive VCE (ON) Temperature co-efficient Ultra
8.9. Size:321K international rectifier
irg7ph30k10.pdf 

PD - 96156AIRG7PH30K10PbFINSULATED GATE BIPOLAR TRANSISTORFeaturesC Low VCE (ON) Trench IGBT TechnologyVCES = 1200V Low Switching Losses Maximum Junction Temperature 175 CIC = 23A, TC = 100C 10 S short Circuit SOA Square RBSOA GtSC 10s, TJ(max) =175C 100% of the parts tested for ILM E Positive VCE (ON) Temperature Co-EfficientVC
8.11. Size:653K international rectifier
irg7ph37k10d.pdf 

IRG7PH37K10DPbF IRG7PH37K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V G C G IC = 25A, TC =100C E tSC 10s, TJ(max) = 150C E GC C G G EVCE(ON) typ. = 1.9V @ IC = 15A IRG7PH37K10DPbFIRG7PH37K10DEPbFn-channelTO247ACTO247ADApplications G C E Industrial Motor Drive Gate Collecto
8.12. Size:461K international rectifier
irg7ph35ud.pdf 

PD-96288IRG7PH35UDPbFINSULATED GATE BIPOLAR TRANSISTOR WITHIRG7PH35UD-EPULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Square RBSOAI NOMINAL = 20A 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficientGTJ(max) = 150C Ultra fast soft recovery co-pak diode T
8.13. Size:299K international rectifier
irg7ph42u.pdf 

PD - 96233BIRG7PH42UPbFINSULATED GATE BIPOLAR TRANSISTORIRG7PH42U-EPFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Maximum junction temperature 175 CIC = 60A, TC = 100C Square RBSOA 100% of the parts tested for ILM GTJ(max) =175C Positive VCE (ON) temperature co-efficientE Tight parameter distributionVC
8.14. Size:894K international rectifier
irg7ph44k10d.pdf 

IRG7PH44K10DPbF IRG7PH44K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V C C C IC = 40A, TC =100C tSC 10s, TJ(max) = 150C GE C E G C G EVCE(ON) typ. = 1.9V @ IC = 25A IRG7PH44K10DPbFIRG7PH44K10DEPbFn-channelTO247ACTO247ADApplications G C E Industrial Motor Drive Gate Collector E
8.15. Size:374K international rectifier
irg7ph35u-ep.pdf 

PD - 97479IRG7PH35UPbFINSULATED GATE BIPOLAR TRANSISTORIRG7PH35U-EPFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Maximum junction temperature 175 CI NOMINAL = 20A Square RBSOA 100% of the parts tested for ILMGTJ(max) = 175C Positive VCE (ON) temperature co-efficient Tight parameter distributionEVCE(on)
8.16. Size:351K international rectifier
irg7ph46ud-e.pdf 

IRG7PH46UDPbFIRG7PH46UD-EPINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Square RBSOAI NOMINAL = 40A 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficientG TJ(max) = 150C Ultra fast soft recovery co-pak diode Tight parame
8.17. Size:351K international rectifier
irg7ph46ud.pdf 

IRG7PH46UDPbFIRG7PH46UD-EPINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Square RBSOAI NOMINAL = 40A 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficientG TJ(max) = 150C Ultra fast soft recovery co-pak diode Tight parame
8.18. Size:283K international rectifier
irg7ph42ud1m.pdf 

IRG7PH42UD1MPbFINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODEFOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONSFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Square RBSOAIC = 45A, TC = 100C Ultra-low VF DiodeTJ(max) = 150C 1300Vpk repetitive transient capacityG 100% of the parts tested for ILM VCE
8.19. Size:297K international rectifier
irg7ph46u.pdf 

PD - 96305AIRG7PH46UPbFINSULATED GATE BIPOLAR TRANSISTORIRG7PH46U-EPFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Maximum junction temperature 175 CIC = 75A, TC = 100C Square RBSOA 100% of the parts tested for ILM GTJ(max) =175C Positive VCE (ON) temperature co-efficientE Tight parameter distributionVC
8.20. Size:326K international rectifier
irg7ph35ud1-ep.pdf 

IRG7PH35UD1PbFIRG7PH35UD1-EPINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODEFOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONSFeaturesCVCES = 1200V Low VCE (ON) trench IGBT Technology Low Switching LossesI NOMINAL = 20A Square RBSOA Ultra-Low VF DiodeGTJ(max) = 150C 1300Vpk Repetitive Transient Capacity 100% of the Parts Tested for I
8.21. Size:435K international rectifier
irg7ph42ud.pdf 

PD - 97391BIRG7PH42UDPbFINSULATED GATE BIPOLAR TRANSISTOR WITHIRG7PH42UD-EPULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Square RBSOAIC = 45A, TC = 100C 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficientG TJ(max) = 150C Ultra fast soft recovery co-pak diod
8.22. Size:331K international rectifier
irg7ph42ud1.pdf 

IRG7PH42UD1PbFIRG7PH42UD1-EPINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODEFOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONSFeaturesCVCES = 1200V Low VCE (ON) trench IGBT technology Low switching losses Square RBSOA I NOMINAL = 30A Ultra-low VF DiodeG 1300Vpk repetitive transient capacityTJ(max) = 150C 100% of the parts tested for IL
Другие IGBT... IRG7PH35U
, IRG7PH35UD
, IRG7PH35UD1
, IRG7PH42U
, IRG7PH42UD
, IRG7PH42UD1
, IRG7PH46U
, IRG7PH46UD
, SGT40N60FD2PN
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, IRG7PSH50UD
, IRG7PSH73K10
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.
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