Справочник IGBT. IRG7S313U

 

IRG7S313U - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

Наименование: IRG7S313U

Тип управляющего канала: N-Channel

Максимальная рассеиваемая мощность (Pc): 78

Предельно-допустимое напряжение коллектор-эмиттер (Uce): 330

Напряжение насыщения коллектор-эмиттер (Ucesat): 1.45

Максимальный постоянный ток коллектора (Ic): 40

Тип корпуса: D2PAK

Аналог (замена) для IRG7S313U

 

 

IRG7S313U Datasheet (PDF)

0.1. irg7s313u.pdf Size:244K _international_rectifier

IRG7S313U
IRG7S313U

PD - 97402AIRG7S313UPbFPDP TRENCH IGBTKey ParametersFeaturesVCE min 330 Vl Advanced Trench IGBT Technologyl Optimized for Sustain and Energy RecoveryVCE(ON) typ. @ IC = 20A 1.35 Vcircuits in PDP applicationsIRP max @ TC= 25C 160 Al Low VCE(on) and Energy per Pulse (EPULSETM)TJ max 150 Cfor improved panel efficiencyl High repetitive peak current capabilityl Lead

7.1. irg7s319u.pdf Size:244K _international_rectifier

IRG7S313U
IRG7S313U

PD - 97155IRG7S319UPbFPDP TRENCH IGBTKey ParametersFeaturesVCE min 330 Vl Advanced Trench IGBT Technologyl Optimized for Sustain and Energy RecoveryVCE(ON) typ. @ IC = 20A 1.26 Vcircuits in PDP applicationsIRP max @ TC= 25C 170 Al Low VCE(on) and Energy per Pulse (EPULSETM)TJ max 150 Cfor improved panel efficiencyl High repetitive peak current capabilityl Lead

 9.1. irg7sc12f.pdf Size:252K _international_rectifier

IRG7S313U
IRG7S313U

PD - 96363IRG7SC12FPbFINSULATED GATE BIPOLAR TRANSISTORCFeaturesVCES = 600V Low VCE (ON) Trench IGBT Technology Maximum Junction temperature 150 CIC = 8A, TC = 100C 3 S short circuit SOA Square RBSOA GtSC 3s, TJ(max) = 150C Positive VCE (ON) Temperature co-efficientE Tight parameter distributionVCE(on) typ. = 1.60V Lead Free Pac

9.2. irg7sc28u.pdf Size:213K _international_rectifier

IRG7S313U
IRG7S313U

PD - 97569APDP TRENCH IGBTIRG7SC28UPbFKey ParametersFeaturesVCE min600 Vl Advanced Trench IGBT TechnologyVCE(ON) typ. @ IC = 40A1.70 Vl Optimized for Sustain and Energy Recoverycircuits in PDP applicationsIRP max @ TC= 25C 225 Al Low VCE(on) and Energy per Pulse (EPULSETM)TJ max150 Cfor improved panel efficiencyl High repetitive peak current capabilityl

Другие IGBT... IRG7PH42UD1 , IRG7PH46U , IRG7PH46UD , IRG7PH50U , IRG7PH50U-E , IRG7PSH50UD , IRG7PSH73K10 , IRG7R313U , FGH60N60SFD , IRG7S319U , IRG7SC12F , IRG7SC28U , IRGB10B60KD , IRGB14C40L , IRGB15B60KD , IRGB20B60PD1 , IRGB30B60K .

 

 
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