IRGP4072D - аналоги и описание IGBT

PD - 97317 IRGP4072DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low VCE (ON) Trench IGBT Technology C Low switching losses Maximum Junction temperature 150 C VCES = 300V Square RBSOA 100% of the parts tested for clamped inductive load IC = 40A, TC = 100 C Ultra fast soft Recovery Co-Pak Diode G Tight parameter dist

IRGP4078DPbF IRGP4078D-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS C VCES = 600V Features IC = 50A, TC =100 C Low VCE (ON) Trench IGBT Technology TJ(MAX) = 175 C Low Switching Losses G Maximum Junction temperature 175 C VCE(ON) typ. = 1.9V 5 s short circuit SOA E Square RBS

IRGB4062DPbF IRGP4062DPbF IRGP4062D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 600V Low VCE (ON) Trench IGBT Technology Low switching losses IC = 24A, TC = 100 C Maximum Junction temperature 175 C 5 S short circuit SOA G tSC 5 s, TJ(max) = 175 C Square RBSOA 100% of the parts tested for ILM E

PD - 97426 IRGP4069PbF INSULATED GATE BIPOLAR TRANSISTOR IRGP4069-EPbF Features C Low VCE (ON) Trench IGBT Technology VCES = 600V Low Switching Losses Maximum Junction Temperature 175 C IC(Nominal) = 35A 5 S short circuit SOA Square RBSOA G tSC 5 s, TJ(max) = 175 C 100% of The Parts Tested for ILM E Positive VCE (ON) Temperature Coefficient

AUIRGP4063D AUTOMOTIVE GRADE AUIRGP4063D-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features Low VCE (ON) Trench IGBT Technology IC = 60A, TC = 100 C Low switching losses Maximum Junction temperature 175 C G tSC 5 s, TJ(max) = 175 C 5 S short circuit SOA Square RBSOA E VCE(on) typ. = 1.6V 100% of the

PD - 97577 IRGP4066PbF INSULATED GATE BIPOLAR TRANSISTOR IRGP4066-EPbF Features C Low VCE (ON) Trench IGBT Technology VCES = 600V Low Switching Losses Maximum Junction Temperature 175 C IC(Nominal) = 75A 5 S short circuit SOA Square RBSOA G tSC 5 s, TJ(max) = 175 C 100% of The Parts Tested for ILM E Positive VCE (ON) Temperature Coefficient

PD - 97425 IRGP4069DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH IRGP4069D-EPbF ULTRAFAST SOFT RECOVERY DIODE Features C Low VCE (ON) Trench IGBT Technology VCES = 600V Low Switching Losses Maximum Junction Temperature 175 C IC(Nominal) = 35A 5 S short circuit SOA Square RBSOA G tSC 5 s, TJ(max) = 175 C 100% of The Parts Tested for ILM Positiv

PD - 97425 IRGP4069DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH IRGP4069D-EPbF ULTRAFAST SOFT RECOVERY DIODE Features C Low VCE (ON) Trench IGBT Technology VCES = 600V Low Switching Losses Maximum Junction Temperature 175 C IC(Nominal) = 35A 5 S short circuit SOA Square RBSOA G tSC 5 s, TJ(max) = 175 C 100% of The Parts Tested for ILM Positiv

IRGB4062DPbF IRGP4062DPbF IRGP4062D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 600V Low VCE (ON) Trench IGBT Technology Low switching losses IC = 24A, TC = 100 C Maximum Junction temperature 175 C 5 S short circuit SOA G tSC 5 s, TJ(max) = 175 C Square RBSOA 100% of the parts tested for ILM E

PD - 96353A AUIRGP4062D AUIRGP4062D-E INSULATED GATE BIPOLAR TRANSISTOR WITH C ULTRAFAST SOFT RECOVERY DIODE VCES = 600V Features IC = 24A, TC = 100 C Low VCE (on) Trench IGBT Technology Low Switching Losses G tSC 5 s, TJ(max) = 175 C 5 s SCSOA Square RBSOA E VCE(on) typ. = 1.60V 100% of The Parts Tested for ILM Positive VCE (on) Temperature Co

IRGP4062-EPbF INSULATED GATE BIPOLAR TRANSISTOR Features C Low VCE (ON) Trench IGBT Technology VCES = 600V Low switching losses Maximum Junction temperature 175 C IC = 24A, TC = 100 C 5 S short circuit SOA Square RBSOA G tSC 5 s, TJ(max) = 175 C 100% of the parts tested for ILM Positive VCE (ON) Temperature co-efficient E VCE(on) typ. =

IRGB4062DPbF IRGP4062DPbF IRGP4062D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 600V Low VCE (ON) Trench IGBT Technology Low switching losses IC = 24A, TC = 100 C Maximum Junction temperature 175 C 5 S short circuit SOA G tSC 5 s, TJ(max) = 175 C Square RBSOA 100% of the parts tested for ILM E

PD - 97576 IRGP4066DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH IRGP4066D-EPbF ULTRAFAST SOFT RECOVERY DIODE Features C Low VCE (ON) Trench IGBT Technology VCES = 600V Low Switching Losses Maximum Junction Temperature 175 C IC(Nominal) = 75A 5 S short circuit SOA Square RBSOA G tSC 5 s, TJ(max) = 175 C 100% of The Parts Tested for ILM Positiv

PD - 96353 AUIRGB4062D AUIRGP4062D AUIRGP4062D-E C INSULATED GATE BIPOLAR TRANSISTOR WITH VCES = 600V ULTRAFAST SOFT RECOVERY DIODE IC = 24A, TC = 100 C Features Low VCE (on) Trench IGBT Technology G tSC 5 s, TJ(max) = 175 C Low Switching Losses 5 s SCSOA E Square RBSOA VCE(on) typ. = 1.60V 100% of The Parts Tested for ILM n-channel Positive V

PD - 97250 IRGP4068DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS IRGP4068D-EPbF Features Low VCE (ON) Trench IGBT Technology C VCES = 600V Low Switching Losses Maximum Junction temperature 175 C IC = 48A, TC = 100 C 5 S short circuit SOA Square RBSOA G tSC 5 s, TJ(max) = 175 C

PD - 97404 IRGP4063PbF INSULATED GATE BIPOLAR TRANSISTOR IRGP4063-EPbF Features C Low VCE (ON) Trench IGBT Technology VCES = 600V Low switching losses Maximum Junction temperature 175 C IC = 48A, TC = 100 C 5 S short circuit SOA Square RBSOA G tSC 5 s, TJ(max) = 175 C 100% of the parts tested for ILM Positive VCE (ON) Temperature co-effic

PD - 97576 IRGP4066DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH IRGP4066D-EPbF ULTRAFAST SOFT RECOVERY DIODE Features C Low VCE (ON) Trench IGBT Technology VCES = 600V Low Switching Losses Maximum Junction Temperature 175 C IC(Nominal) = 75A 5 S short circuit SOA Square RBSOA G tSC 5 s, TJ(max) = 175 C 100% of The Parts Tested for ILM Positiv

AUIRGP4062D1 AUTOMOTIVE GRADE AUIRGP4062D1-E INSULATED GATE BIPOLAR TRANSISTOR WITH C VCES = 600V ULTRAFAST SOFT RECOVERY DIODE Features Low VCE (on) Trench IGBT Technology IC(Nominal) = 24A Low Switching Losses 5 s SCSOA G tSC 5 s, TJ(max) = 175 C Square RBSOA 100% of The Parts Tested for ILM Positive VCE (on) Temperature Coefficient. E VCE(on) ty

PD - 97576 IRGP4066DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH IRGP4066D-EPbF ULTRAFAST SOFT RECOVERY DIODE Features C Low VCE (ON) Trench IGBT Technology VCES = 600V Low Switching Losses Maximum Junction Temperature 175 C IC(Nominal) = 75A 5 S short circuit SOA Square RBSOA G tSC 5 s, TJ(max) = 175 C 100% of The Parts Tested for ILM Positiv

PD - 97210 IRGP4063DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low VCE (ON) Trench IGBT Technology C VCES = 600V Low switching losses Maximum Junction temperature 175 C IC = 48A, TC = 100 C 5 S short circuit SOA Square RBSOA G tSC 5 s, TJ(max) = 175 C 100% of the parts tested for 4X rated current (ILM) P

IRGP4063D1PbF IRGP4063D1-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C G IC = 60A, TC =100 C G tSC 5 s, TJ(max) = 175 C G E VCE(ON) typ. = 1.65V @ IC = 48A E C C E G G n-channel Applica ons IRGP4063D1PbF IRGP4063D1 EPbF Industrial Motor Drive G C E Inverters UPS Gate Collecto

AUIRGP4066D1 AUTOMOTIVE GRADE AUIRGP4066D1-E INSULATED GATE BIPOLAR TRANSISTOR WITH C VCES = 600V ULTRAFAST SOFT RECOVERY DIODE Features IC(Nominal) = 75A Low VCE (ON) Trench IGBT Technology Low switching losses G tSC 5 s, TJ(max) = 175 C Maximum Junction temperature 175 C 5 S short circuit SOA E VCE(on) typ. = 1.70V Square RBSOA n-channel 100

PD - 97577 IRGP4066PbF INSULATED GATE BIPOLAR TRANSISTOR IRGP4066-EPbF Features C Low VCE (ON) Trench IGBT Technology VCES = 600V Low Switching Losses Maximum Junction Temperature 175 C IC(Nominal) = 75A 5 S short circuit SOA Square RBSOA G tSC 5 s, TJ(max) = 175 C 100% of The Parts Tested for ILM E Positive VCE (ON) Temperature Coefficient

PD - 97425 IRGP4069DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH IRGP4069D-EPbF ULTRAFAST SOFT RECOVERY DIODE Features C Low VCE (ON) Trench IGBT Technology VCES = 600V Low Switching Losses Maximum Junction Temperature 175 C IC(Nominal) = 35A 5 S short circuit SOA Square RBSOA G tSC 5 s, TJ(max) = 175 C 100% of The Parts Tested for ILM Positiv

PD-95882 IRGP4050 PDP Switch Features C Key parameters optimized for PDP sustain & Energy recovery applications VCES = 250V 104A continuous collector current rating reduces component count High pulse current rating makes it ideal for VCE(on) typ. = 1.64V G capacitive load circuits Low temperature co-efficient of VCE (ON) ensures @VGE = 15V, IC = 30A E reduced power

PD - 97404 IRGP4063PbF INSULATED GATE BIPOLAR TRANSISTOR IRGP4063-EPbF Features C Low VCE (ON) Trench IGBT Technology VCES = 600V Low switching losses Maximum Junction temperature 175 C IC = 48A, TC = 100 C 5 S short circuit SOA Square RBSOA G tSC 5 s, TJ(max) = 175 C 100% of the parts tested for ILM Positive VCE (ON) Temperature co-effic

PD - 97132 IRGP4086PbF PDP TRENCH IGBT Key Parameters Features VCE min 300 V l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery VCE(ON) typ. @ IC = 70A 1.90 V Circuits in PDP Applications IRP max @ TC= 25 C c A 250 l Low VCE(on) and Energy per Pulse (EPULSETM) TJ max 150 C for Improved Panel Efficiency l High Repetitive Peak Current Capability C l

PD - 97426 IRGP4069PbF INSULATED GATE BIPOLAR TRANSISTOR IRGP4069-EPbF Features C Low VCE (ON) Trench IGBT Technology VCES = 600V Low Switching Losses Maximum Junction Temperature 175 C IC(Nominal) = 35A 5 S short circuit SOA Square RBSOA G tSC 5 s, TJ(max) = 175 C 100% of The Parts Tested for ILM E Positive VCE (ON) Temperature Coefficient

AUIRGP4063D AUTOMOTIVE GRADE AUIRGP4063D-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features Low VCE (ON) Trench IGBT Technology IC = 60A, TC = 100 C Low switching losses Maximum Junction temperature 175 C G tSC 5 s, TJ(max) = 175 C 5 S short circuit SOA Square RBSOA E VCE(on) typ. = 1.6V 100% of the