IRGPS40B120UD - аналоги, параметры транзистора

IRGPS40B120UD даташит

..1. Size:134K international rectifier
irgps40b120ud.pdf pdf_icon

PD- 94240A IRGPS40B120UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Co-Pack IGBT C VCES = 1200V Features Non Punch Through IGBT Technology. Low Diode VF. VCE(on) typ. = 3.12V 10 s Short Circuit Capability. Square RBSOA. G @ VGE = 15V, Ultrasoft Diode Reverse Recovery Characteristics. Positive VCE (on) Temperature Coeffi

2.1. Size:113K international rectifier
irgps40b120u.pdf pdf_icon

PD- 94295D IRGPS40B120U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT C VCES = 1200V Features Non Punch Through IGBT Technology. 10 s Short Circuit Capability. VCE(on) typ. = 3.12V Square RBSOA. Positive VCE (on) Temperature Coefficient. G @ VGE = 15V, Super-247 Package. E n-channel ICE = 40A, Tj=25 C Benefits Benchmark Efficiency for Motor Control

7.1. Size:306K international rectifier
auirgps4067d1.pdf pdf_icon

PD - 97726C AUTOMOTIVE GRADE AUIRGPS4067D1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features IC = 160A, TC = 100 C Low VCE (on) Trench IGBT Technology Low Switching Losses 6 s SCSOA G tSC 6 s, TJ(max) = 175 C Square RBSOA 100% of the parts tested for ILM E VCE(on) typ. = 1.70V Positive VCE (on) Tempera

7.2. Size:272K international rectifier
irgps4067d.pdf pdf_icon

PD - 97736 IRGPS4067DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 600V Low VCE (on) Trench IGBT Technology Low Switching Losses IC(Nominal) = 120A 5 s SCSOA Square RBSOA G tSC 5 s, TJ(max) = 175 C 100% of The Parts Tested for ILM Positive VCE (on) Temperature Coefficient. E VCE(on) typ. = 1.70V