Справочник IGBT. RJH1CM7DPQ-E0

 

RJH1CM7DPQ-E0 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: RJH1CM7DPQ-E0
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 328.9 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 30 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 50 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.1 V @25℃
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 28 nS
   Coesⓘ - Выходная емкость, типовая: 100 pF
   Qgⓘ - Общий заряд затвора, typ: 140 nC
   Тип корпуса: TO247

 Аналог (замена) для RJH1CM7DPQ-E0

 

 

RJH1CM7DPQ-E0 Datasheet (PDF)

 ..1. Size:123K  renesas
 rjh1cm7dpq-e0.pdf

RJH1CM7DPQ-E0 RJH1CM7DPQ-E0

Preliminary Datasheet RJH1CM7DPQ-E0 R07DS0522EJ04001200V - 25A - IGBT Rev.4.00Application: Inverter Jul 02, 2012Features Short circuit withstand time (10 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.1 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25C) Built-in fast recovery diode (trr = 170 ns typ.) in one package Trench gate and thin w

 4.1. Size:53K  renesas
 r07ds0522ej rjh1cm7dpq.pdf

RJH1CM7DPQ-E0 RJH1CM7DPQ-E0

Preliminary DatasheetRJH1CM7DPQ-E0 R07DS0522EJ01001200 V - 25 A - IGBT Rev.1.00Application: Inverter Aug 11, 2011Features Short circuit withstand time (10 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (trr = 100 ns typ.) in one package Trench gate and thin w

 8.1. Size:118K  renesas
 rjh1cm6dpq-e0.pdf

RJH1CM7DPQ-E0 RJH1CM7DPQ-E0

Preliminary Datasheet RJH1CM6DPQ-E0 R07DS0521EJ04001200V - 20A - IGBT Rev.4.00Application: Inverter Jul 02, 2012Features Short circuit withstand time (10 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.1 V typ. (at IC = 20 A, VGE = 15 V, Ta = 25C) Built-in fast recovery diode (trr = 180 ns typ.) in one package Trench gate and thin w

 8.2. Size:53K  renesas
 r07ds0520ej rjh1cm5dpq.pdf

RJH1CM7DPQ-E0 RJH1CM7DPQ-E0

Preliminary DatasheetRJH1CM5DPQ-E0 R07DS0520EJ02001200V - 15A - IGBT Rev.2.00Application: Inverter Nov 30, 2011Features Short circuit withstand time (10 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.1 V typ. (at IC = 15 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (trr = 100 ns typ.) in one package Trench gate and thin waf

 8.3. Size:117K  renesas
 rjh1cm5dpq-e0.pdf

RJH1CM7DPQ-E0 RJH1CM7DPQ-E0

Preliminary Datasheet RJH1CM5DPQ-E0 R07DS0520EJ05001200V - 15A - IGBT Rev.5.00Application: Inverter Dec 14, 2012Features Short circuit withstand time (10 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.1 V typ. (at IC = 15 A, VGE = 15 V, Ta = 25C) Built-in fast recovery diode (trr = 200 ns typ.) in one package Trench gate and thin w

 8.4. Size:53K  renesas
 r07ds0521ej rjh1cm6dpq.pdf

RJH1CM7DPQ-E0 RJH1CM7DPQ-E0

Preliminary DatasheetRJH1CM6DPQ-E0 R07DS0521EJ02001200V - 20A - IGBT Rev.2.00Application: Inverter Nov 30, 2011Features Short circuit withstand time (10 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.1 V typ. (at IC = 20 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (trr = 100 ns typ.) in one package Trench gate and thin waf

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