RJH1CV6DPQ-E0 - аналоги и описание IGBT

Preliminary Datasheet RJH1CV6DPQ-E0 R07DS0524EJ0500 1200V - 30A - IGBT Rev.5.00 Application Inverter Jun 12, 2012 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25 C) Built-in fast recovery diode (trr = 180 ns typ.) in one package Trench gate and thin wa

Preliminary Datasheet RJH1CV6DPQ-E0 R07DS0524EJ0300 1200 V - 30 A - IGBT Rev.3.00 Application Inverter Nov 21, 2011 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (trr = 100 ns typ.) in one package Trench gate and thin wa

Preliminary Datasheet RJH1CV6DPK R07DS0747EJ0300 1200V - 30A - IGBT Rev.3.00 Application Inverter Feb 14, 2013 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25 C) Built-in fast recovery diode (trr = 180 ns typ.) in one package Trench gate and thin wafer

Preliminary Datasheet RJH1CV7DPQ-E0 R07DS0525EJ0500 1200V - 35A - IGBT Rev.5.00 Application Inverter May 24, 2012 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 35 A, VGE = 15 V, Ta = 25 C) Built-in fast recovery diode (trr = 200 ns typ.) in one package Trench gate and thin wa

Preliminary Datasheet RJH1CV5DPQ-E0 R07DS0523EJ0300 1200 V - 25 A - IGBT Rev.3.00 Application Inverter Nov 21, 2011 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (trr = 100 ns typ.) in one package Trench gate and thin wa

Preliminary Datasheet RJH1CV7DPK R07DS0748EJ0300 1200V - 35A - IGBT Rev.3.00 Application Inverter Feb 14, 2013 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 35 A, VGE = 15 V, Ta = 25 C) Built-in fast recovery diode (trr = 200 ns typ.) in one package Trench gate and thin wafer

Preliminary Datasheet RJH1CV7DPQ-E0 R07DS0525EJ0300 1200 V - 35 A - IGBT Rev.3.00 Application Inverter Nov 21, 2011 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 35 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (trr = 100 ns typ.) in one package Trench gate and thin wa

Preliminary Datasheet RJH1CV5DPK R07DS0746EJ0300 1200V - 25A - IGBT Rev.3.00 Application Inverter Feb 14, 2013 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25 C) Built-in fast recovery diode (trr = 170 ns typ.) in one package Trench gate and thin wafer

Preliminary Datasheet RJH1CV5DPQ-E0 R07DS0523EJ0500 1200V - 25A - IGBT Rev.5.00 Application Inverter Jun 12, 2012 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25 C) Built-in fast recovery diode (trr = 170 ns typ.) in one package Trench gate and thin wa