Справочник IGBT. RJH60D0DPM

 

RJH60D0DPM - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: RJH60D0DPM
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 40 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 30 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 45 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.6 V @25℃
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 20 nS
   Coesⓘ - Выходная емкость, типовая: 60 pF
   Тип корпуса: TO3PFM SC93

 Аналог (замена) для RJH60D0DPM

 

 

RJH60D0DPM Datasheet (PDF)

 ..1. Size:97K  renesas
 rjh60d0dpm.pdf

RJH60D0DPM RJH60D0DPM

Preliminary Datasheet RJH60D0DPM R07DS0156EJ0300600V - 22A - IGBT Rev.3.00Application: Inverter Apr 19, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer techno

 ..2. Size:83K  renesas
 r07ds0156ej rjh60d0dpm.pdf

RJH60D0DPM RJH60D0DPM

Preliminary Datasheet RJH60D0DPM R07DS0156EJ0200Silicon N Channel IGBT Rev.2.00Application: Inverter Nov 16, 2010Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer t

 5.1. Size:97K  renesas
 rjh60d0dpk.pdf

RJH60D0DPM RJH60D0DPM

Preliminary Datasheet RJH60D0DPK R07DS0155EJ0400600V - 22A - IGBT Rev.4.00Application: Inverter Apr 19, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer techno

 5.2. Size:82K  renesas
 rjh60d0dpq-a0.pdf

RJH60D0DPM RJH60D0DPM

Preliminary Datasheet RJH60D0DPQ-A0 R07DS0526EJ0100600 V - 22 A - IGBT Rev.1.00Application: Inverter Aug 26, 2011Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer t

 5.3. Size:82K  renesas
 r07ds0155ej rjh60d0dpk.pdf

RJH60D0DPM RJH60D0DPM

Preliminary Datasheet RJH60D0DPK R07DS0155EJ0300Silicon N Channel IGBT Rev.3.00Application: Inverter Nov 15, 2010Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer t

 5.4. Size:85K  renesas
 r07ds0526ej rjh60d0dpq.pdf

RJH60D0DPM RJH60D0DPM

Preliminary Datasheet RJH60D0DPQ-A0 R07DS0526EJ0100600 V - 22 A - IGBT Rev.1.00Application: Inverter Aug 26, 2011Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer t

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