KGT30N120NDH datasheet, аналоги, основные параметры

Наименование: KGT30N120NDH  📄📄 

Тип транзистора: IGBT

Тип управляющего канала: N

Предельные значения

Pc ⓘ - Максимальная рассеиваемая мощность: 310 W

|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V

|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V

|Ic| ⓘ - Максимальный постоянный ток коллектора: 50 A @25℃

Tj ⓘ - Максимальная температура перехода: 150 ℃

Электрические характеристики

|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.95 V @25℃

tr ⓘ - Время нарастания типовое: 45 nS

Coesⓘ - Выходная емкость, типовая: 100 pF

Тип корпуса: TO3PN

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 Аналог (замена) для KGT30N120NDH

- подбор ⓘ IGBT транзистора по параметрам

 

KGT30N120NDH даташит

 ..1. Size:584K  kec
 kgt30n120ndh.pdf pdf_icon

KGT30N120NDH

SEMICONDUCTOR KGT30N120NDH TECHNICAL DATA General Description A KEC NPT IGBTs offer low switching losses, high energy efficiency Q B N O K and high avalanche ruggedness for soft switching application such as DIM MILLIMETERS IH(induction heating), microwave oven, etc. _ A + 15.60 0.20 _ B 4.80 + 0.20 _ C 19.90 + 0.20 _ D 2.00 0.20 FEATURES + _ d + 1.00 0.20 High speed

 3.1. Size:584K  kec
 kgt30n120nda.pdf pdf_icon

KGT30N120NDH

SEMICONDUCTOR KGT30N120NDA TECHNICAL DATA General Description A KEC NPT IGBTs offer low switching losses, high energy efficiency Q B N O K and high avalanche ruggedness for soft switching application such as DIM MILLIMETERS general inverters, etc. _ A + 15.60 0.20 _ B 4.80 + 0.20 _ C 19.90 + 0.20 _ D 2.00 0.20 FEATURES + _ d + 1.00 0.20 High speed switching _ E 3.

 7.1. Size:1596K  kec
 kgt30n135ndh.pdf pdf_icon

KGT30N120NDH

SEMICONDUCTOR KGT30N135NDH TECHNICAL DATA General Description KEC NPT IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness for soft switching application such as IH(induction heating), microwave oven, etc. FEATURES High speed switching High ruggedness, temperature stable behavior Soft current turn-off waveforms Extremely enhanced avalanche c

 7.2. Size:514K  kec
 kgt30n135kdh.pdf pdf_icon

KGT30N120NDH

SEMICONDUCTOR KGT30N135KDH TECHNICAL DATA General Description B KEC NPT IGBTs offer low switching losses, high energy efficiency A O S K and high avalanche ruggedness for soft switching application such as IH(induction heating), microwave oven, etc. DIM MILLIMETERS _ + A 15.90 0.30 FEATURES _ B 5.00 + 0.20 High speed switching _ C 20.85 + 0.30 _ D 3.00 + 0.20 High r

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... KGT15N120NDH, KGT15N60FDA, KGT20N60KDA, KGT25N120KDA, KGT25N120NDA, KGT25N120NDH, KGT25N135NDH, KGT30N120NDA, IRGP4063D, KGT30N60KDA, KGT40N60KDA, KGT50N60KDA, RJH30E2DPP, IRG4PC60UPBF, APT100GF60B2R, APT100GF60JR, APT100GF60JRD