Справочник IGBT. APT15GP60B

 

APT15GP60B - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: APT15GP60B
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 250 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 56 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.2 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6 V
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 12 nS
   Coesⓘ - Выходная емкость, типовая: 210 pF
   Qgⓘ - Общий заряд затвора, typ: 55 nC
   Тип корпуса: TO247

 Аналог (замена) для APT15GP60B

 

 

APT15GP60B Datasheet (PDF)

 ..1. Size:86K  apt
 apt15gp60b.pdf

APT15GP60B APT15GP60B

APT15GP60B600V POWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies. GCE Low Conduction Loss 100 kHz operation @ 400V, 19AC Low Gate Charge

 0.1. Size:211K  apt
 apt15gp60bsc.pdf

APT15GP60B APT15GP60B

TYPICAL PERFORMANCE CURVESAPT15GP60BSCAPT15GP60BSC600V POWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies. GCE Low Conduction Loss 100 kHz oper

 0.2. Size:1026K  apt
 apt15gp60bdq1g.pdf

APT15GP60B APT15GP60B

TYPICAL PERFORMANCE CURVES APT15GP60BDQ1APT15GP60BDQ1600V POWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies. GCE Low Conduction Loss 100 kHz ope

 0.3. Size:126K  apt
 apt15gp60bdf1.pdf

APT15GP60B APT15GP60B

APT15GP60BDF1600V POWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies. GCE Low Conduction Loss 100 kHz operation @ 400V, 19AC Low Gate Charge

 0.4. Size:253K  apt
 apt15gp60bdq1.pdf

APT15GP60B APT15GP60B

TYPICAL PERFORMANCE CURVES APT15GP60BDQ1APT15GP60BDQ1600V POWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies. GCE Low Conduction Loss 100 kHz ope

 0.5. Size:265K  microsemi
 apt15gp60bg.pdf

APT15GP60B APT15GP60B

APT15GP60BAPT15GP60S600V POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies. Low Conduction Loss 100 kHz operation @ 400V, 19AC Low Gate Charge 20

 0.6. Size:202K  microsemi
 apt15gp60bdlg.pdf

APT15GP60B APT15GP60B

APT15GP60BDL(G)600V, 15A, VCE(ON) = 2.2V TypicalResonant Mode Combi IGBTThe POWER MOS 7 IGBT used in this resonant mode combi is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies.Features Typical Applicat

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