Справочник IGBT. GT10J321

 

GT10J321 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: GT10J321
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 29 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 25 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 10 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2 V @25℃
   Tjⓘ - Максимальная температура перехода: 150 ℃
   Qgⓘ - Общий заряд затвора, typ: 500 nC
   Тип корпуса: 2-10R1C

 Аналог (замена) для GT10J321

 

 

GT10J321 Datasheet (PDF)

 ..1. Size:223K  toshiba
 gt10j321.pdf

GT10J321 GT10J321

GT10J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10J321 High Power Switching Applications Unit: mmFast Switching Applications Fourth-generation IGBT Enhancement mode type Fast switching (FS): Operating frequency up to 50 kHz (reference) High speed: tf = 0.03 s (typ.) Low switching loss : Eon = 0.26 mJ (typ.) : Eoff = 0.18 mJ

 8.1. Size:493K  toshiba
 gt10j301.pdf

GT10J321 GT10J321

GT10J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J301 HIGH POWER SWITCHING APPLICATIONS Unit: mmMOTOR CONTROL APPLICATIONS Third-generation IGBT Enhancement mode type High speed : tf = 0.30s (Max.) Low saturation voltage : VCE (sat) = 2.7V (Max.) FRD included between emitter and collectorABSOLUTE MAXIMUM RATINGS (Ta = 25C) CHAR

 8.2. Size:492K  toshiba
 gt10j303.pdf

GT10J321 GT10J321

GT10J303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J303 HIGH POWER SWITCHING APPLICATIONS Unit: mmMOTOR CONTROL APPLICATIONS Third-generation IGBT Enhancement mode type High speed : tf = 0.30s (Max.) (IC = 10A) Low saturation voltage : VCE (sat) = 2.7V (Max.) (IC = 10A) FRD included between emitter and collector ABSOLUTE MAXIMUM RATI

 8.3. Size:457K  toshiba
 gt10j311.pdf

GT10J321 GT10J321

GT10J311 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J311 Unit: mmHIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Third-generation IGBT Enhancement mode type High speed : tf = 0.30s (Max.) Low saturation voltage : VCE (sat) = 2.7V (Max.) FRD included between emitter and collector MAXIMUM RATINGS (Ta = 25C) CHARACTERISTIC SY

Другие IGBT... GT45G127 , GT45G128 , GT30J124 , GT5G133 , GT5J301 , GT8G151 , GT10G131 , GT10J303 , IRG4PC50UD , GT15J301 , GT15J321 , GT20J321 , GT30J121 , GT30J122 , GT30J126 , GT30J324 , GT35J321 .

 

 
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