GT10J321 - параметры транзистора, его аналоги, Даташиты

GT10J321 Datasheet (PDF)

..1. Size:223K toshiba
gt10j321.pdf pdf_icon

GT10J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10J321 High Power Switching Applications Unit: mmFast Switching Applications Fourth-generation IGBT Enhancement mode type Fast switching (FS): Operating frequency up to 50 kHz (reference) High speed: tf = 0.03 s (typ.) Low switching loss : Eon = 0.26 mJ (typ.) : Eoff = 0.18 mJ

8.1. Size:493K toshiba
gt10j301.pdf pdf_icon

GT10J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J301 HIGH POWER SWITCHING APPLICATIONS Unit: mmMOTOR CONTROL APPLICATIONS Third-generation IGBT Enhancement mode type High speed : tf = 0.30s (Max.) Low saturation voltage : VCE (sat) = 2.7V (Max.) FRD included between emitter and collectorABSOLUTE MAXIMUM RATINGS (Ta = 25C) CHAR

8.2. Size:492K toshiba
gt10j303.pdf pdf_icon

GT10J303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J303 HIGH POWER SWITCHING APPLICATIONS Unit: mmMOTOR CONTROL APPLICATIONS Third-generation IGBT Enhancement mode type High speed : tf = 0.30s (Max.) (IC = 10A) Low saturation voltage : VCE (sat) = 2.7V (Max.) (IC = 10A) FRD included between emitter and collector ABSOLUTE MAXIMUM RATI

8.3. Size:457K toshiba
gt10j311.pdf pdf_icon

GT10J311 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J311 Unit: mmHIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Third-generation IGBT Enhancement mode type High speed : tf = 0.30s (Max.) Low saturation voltage : VCE (sat) = 2.7V (Max.) FRD included between emitter and collector MAXIMUM RATINGS (Ta = 25C) CHARACTERISTIC SY

Другие IGBT... GT45G127 , GT45G128 , GT30J124 , GT5G133 , GT5J301 , GT8G151 , GT10G131 , GT10J303 , IKW40T120 , GT15J301 , GT15J321 , GT20J321 , GT30J121 , GT30J122 , GT30J126 , GT30J324 , GT35J321 .