APT15GP90K Даташит. Аналоги. Параметры и характеристики.
Наименование: APT15GP90K
Тип транзистора: IGBT
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 291 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 900 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 43 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 3.2 V @25℃
Tjⓘ - Максимальная температура перехода: 150 ℃
trⓘ - Время нарастания типовое: 14 nS
Coesⓘ - Выходная емкость, типовая: 120 pF
Тип корпуса: TO220
- подбор IGBT транзистора по параметрам
APT15GP90K Datasheet (PDF)
apt15gp90k.pdf

TYPICAL PERFORMANCE CURVES APT15GP90KAPT15GP90K900V POWER MOS 7 IGBTTO-220The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies.GCE Low Conduction Loss 100 kHz operatio
apt15gp90kg.pdf

TYPICAL PERFORMANCE CURVES APT15GP90K(G) 900V APT15GP90K APT15GP90KG**G Denotes RoHS Compliant, Pb Free Terminal Finish.POWER MOS 7 IGBTTO-220The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency swit
apt15gp90b.pdf

TYPICAL PERFORMANCE CURVES APT15GP90BAPT15GP90B900V POWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies. GCE Low Conduction Loss 100 kHz operation
apt15gp90bdf1.pdf

TYPICAL PERFORMANCE CURVES APT15GP90BDF1APT15GP90BDF1900V POWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies. GCEC Low Conduction Loss 100 kHz
Другие IGBT... GT60J323 , GT60J323H , TSG15N120CN , TSG25N120CN , TSG40N120CE , TSG60N100CE , APT15GP90B , APT15GP90BDF1 , GT30F124 , APT15GT60BR , APT15GT60BRD , APT15GT60KR , APT200GN60J , APT200GN60JDQ4 , APT20GF120BR , APT20GF120BRD , APT20GF120KR .
History: RJP60F5DPK | CM100RL-24NF | CM600DXL-24S | CM50YE13-12H | MMG200D120B6UC | APT40GP90B2DF2 | DM2G150SH6NE
History: RJP60F5DPK | CM100RL-24NF | CM600DXL-24S | CM50YE13-12H | MMG200D120B6UC | APT40GP90B2DF2 | DM2G150SH6NE



Список транзисторов
Обновления
IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
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