APT15GP90K - аналоги, основные параметры, даташиты
Наименование: APT15GP90K
Тип транзистора: IGBT
Тип управляющего канала: N
Предельные значения
Pc ⓘ - Максимальная рассеиваемая мощность: 291 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 900 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic| ⓘ - Максимальный постоянный ток коллектора: 43 A @25℃
Tj ⓘ - Максимальная температура перехода: 150 ℃
Электрические характеристики
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 3.2 V @25℃
tr ⓘ - Время нарастания типовое: 14 nS
Coesⓘ - Выходная емкость, типовая: 120 pF
Тип корпуса: TO220
Аналог (замена) для APT15GP90K
- подбор ⓘ IGBT транзистора по параметрам
APT15GP90K даташит
apt15gp90k.pdf
TYPICAL PERFORMANCE CURVES APT15GP90K APT15GP90K 900V POWER MOS 7 IGBT TO-220 The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C E Low Conduction Loss 100 kHz operatio
apt15gp90kg.pdf
TYPICAL PERFORMANCE CURVES APT15GP90K(G) 900V APT15GP90K APT15GP90KG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT TO-220 The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency swit
apt15gp90b.pdf
TYPICAL PERFORMANCE CURVES APT15GP90B APT15GP90B 900V POWER MOS 7 IGBT TO-247 The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C E Low Conduction Loss 100 kHz operation
apt15gp90bdf1.pdf
TYPICAL PERFORMANCE CURVES APT15GP90BDF1 APT15GP90BDF1 900V POWER MOS 7 IGBT TO-247 The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C E C Low Conduction Loss 100 kHz
Другие IGBT... GT60J323 , GT60J323H , TSG15N120CN , TSG25N120CN , TSG40N120CE , TSG60N100CE , APT15GP90B , APT15GP90BDF1 , GT30F124 , APT15GT60BR , APT15GT60BRD , APT15GT60KR , APT200GN60J , APT200GN60JDQ4 , APT20GF120BR , APT20GF120BRD , APT20GF120KR .
History: APT200GN60JDQ4 | APT30GT60BRDLG | APT25GP120B | APT33GF120BRG
History: APT200GN60JDQ4 | APT30GT60BRDLG | APT25GP120B | APT33GF120BRG
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Список транзисторов
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