Справочник IGBT. APT25GP120B

 

APT25GP120B Даташит. Аналоги. Параметры и характеристики.


   Наименование: APT25GP120B
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 417 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 69 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 3.3 V @25℃
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 14 nS
   Coesⓘ - Выходная емкость, типовая: 200 pF
   Тип корпуса: TO247
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APT25GP120B Datasheet (PDF)

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apt25gp120b.pdfpdf_icon

APT25GP120B

APT25GP120B1200V POWER MOS 7 IGBTA new generation of high voltage power IGBTs. Using punch-throughTO-247technology and a proprietary metal gate, this IGBT has been optimized forvery fast switching, making it ideal for high frequency, high voltage switch-mode power supplies and tail current sensitive applications. In many cases,the POWER MOS 7 IGBT provides a lower cost alt

 0.1. Size:93K  apt
apt25gp120bg.pdfpdf_icon

APT25GP120B

APT25GP120B1200V POWER MOS 7 IGBTA new generation of high voltage power IGBTs. Using punch-throughTO-247technology and a proprietary metal gate, this IGBT has been optimized forvery fast switching, making it ideal for high frequency, high voltage switch-mode power supplies and tail current sensitive applications. In many cases,the POWER MOS 7 IGBT provides a lower cost alt

 0.2. Size:190K  apt
apt25gp120bdf1.pdfpdf_icon

APT25GP120B

TYPICAL PERFORMANCE CURVESAPT25GP120BDF1APT25GP120BDF11200V POWER MOS 7 IGBTA new generation of high voltage power IGBTs. Using punch-through technologyTO-247and a proprietary metal gate, this IGBT has been optimized for very fastswitching, making it ideal for high frequency, high voltage switch-mode powersupplies and tail current sensitive applications. In many cases, the

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apt25gp90bdf1.pdfpdf_icon

APT25GP120B

TYPICAL PERFORMANCE CURVES APT25GP90BDF1APT25GP90BDF1900V POWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies. GCEC Low Conduction Loss 100 kHz

Другие IGBT... APT20GF120BRD , APT20GF120KR , APT20GF120SRD , APT20GT60AR , APT20GT60BR , APT20GT60CR , APT20GT60KR , APT25GN120B , CRG40T60AN3H , APT25GP120BDF1 , APT25GP90B , APT25GP90BDF1 , APT26GU30B , APT26GU30K , APT30GF60JU2 , APT30GF60JU3 , APT30GP60B .

History: HGT1S7N60B3D | IXBT16N170A | VS-20MT120UFAPBF | BUK866-400IZ | FGHL40S65UQ | IQS2B57N120K4

 

 
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