APT30GF60JU3 - Аналоги. Основные параметры
Наименование: APT30GF60JU3
Тип транзистора: IGBT + Diode
Тип управляющего канала: N
Pc ⓘ -
Максимальная рассеиваемая мощность: 192
W
|Vce|ⓘ -
Предельно-допустимое напряжение коллектор-эмиттер: 600
V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20
V
|Ic| ⓘ - Максимальный постоянный ток коллектора:
58
A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое:
2
V @25℃
|VGEth|ⓘ -
Максимальное пороговое напряжение затвор-эмиттер: 5
V
Tj ⓘ - Максимальная температура перехода:
150
℃
tr ⓘ -
Время нарастания типовое: 41
nS
Coesⓘ - Выходная емкость, типовая: 150
pF
Qg ⓘ - Общий заряд затвора, typ: 140
nC
Тип корпуса:
SOT227
Аналог (замена) для APT30GF60JU3
APT30GF60JU3 Datasheet (PDF)
..1. Size:473K apt
apt30gf60ju3.pdf 

APT30GF60JU3 ISOTOP Buck chopper VCES = 600V IC = 30A @ Tc = 100 C NPT IGBT C Application AC and DC motor control Switched Mode Power Supplies G Features Non Punch Through (NPT) THUNDERBOLT IGBT - Low voltage drop - Low tail current E - Switching frequency up to 100 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanch
3.1. Size:473K apt
apt30gf60ju2.pdf 

APT30GF60JU2 ISOTOP Boost chopper VCES = 600V IC = 30A @ Tc = 100 C NPT IGBT K Application AC and DC motor control Switched Mode Power Supplies Power Factor Correction C Brake switch Features G Non Punch Through (NPT) THUNDERBOLT IGBT - Low voltage drop - Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes -
8.1. Size:395K apt
apt30gn60bg.pdf 

TYPICAL PERFORMANCE CURVES APT30GN60B(G) 600V APT30GN60B APT30GN60BG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and
8.2. Size:429K apt
apt30gn60bdq2g.pdf 

TYPICAL PERFORMANCE CURVES APT30GN60BDQ2(G) 600V APT30GN60BDQ2 APT30GN60BDQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distrib
8.3. Size:27K apt
apt30gt60cr.pdf 

APT30GT60CR 600V 30A Thunderbolt IGBT TO-254 TO-254 The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT offers superior ruggedness and ultrafast switching speed. Low Forward Voltage Drop High Freq. Switching to 150KHz C C Low Tail Current Ultra Low Leakage Current E G Avalanche R
8.4. Size:90K apt
apt30gp60b.pdf 

APT30GP60B 600V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through TO-247 technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch- mode power supplies and tail current sensitive applications. In many cases, the POWER MOS 7 IGBT provides a lower cost alter
8.5. Size:114K apt
apt30gt60krg.pdf 

TYPICAL PERFORMANCE CURVES APT30GT60KR(G) 600V APT30GT60KR APT30GT60KRG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT TO-220 The Thunderblot IGBT is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT offers superior ruggedness and ultrafast switching speed. Low Forward Voltage Drop High
8.7. Size:199K apt
apt30gp60bdf1.pdf 

TYPICAL PERFORMANCE CURVES APT30GP60BDF1 APT30GP60BDF1 600V POWER MOS 7 IGBT TO-247 A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode G power supplies and tail current sensitive applications. In many cases, the
8.8. Size:25K apt
apt30gt60kr.pdf 

APT30GT60KR 600V 58A Thunderbolt IGBT TO-220 The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT offers superior ruggedness and ultrafast switching speed. G C Low Forward Voltage Drop High Freq. Switching to 150KHz E C Low Tail Current Ultra Low Leakage Current Avalanche Rated
8.9. Size:207K apt
apt30gp60jdf1.pdf 

TYPICAL PERFORMANCE CURVES APT30GP60JDF1 APT30GP60JDF1 600V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode power supplies and tail current sensitive applications. In many cases, the "UL Recog
8.10. Size:68K apt
apt30gt60brd.pdf 

APT30GT60BRD 600V 55A Thunderbolt IGBT & FRED The Thunderbolt IGBT is a new generation of high voltage power IGBTs. TO-247 Using Non-Punch Through Technology the Thunderbolt IGBT combined with an APT free-wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior ruggedness and ultrafast switching speed. G Low Forward Voltage Drop High Freq. Switching to 150KHz
8.11. Size:433K apt
apt30gp60bdq1g.pdf 

TYPICAL PERFORMANCE CURVES APT30GP60BDQ1(G) 600V APT30GP60BDQ1 APT30GP60BDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency swi
8.12. Size:687K apt
apt30gn60sg apt30gp60bg.pdf 

APT30GP60B APT30GP60S 600V B POWER MOS 7 IGBT D3PAK A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for S C very fast switching, making it ideal for high frequency, high voltage switch- G E mode power supplies and tail current sensitive applications. In many cases, the POWER MOS 7 IGBT pr
8.13. Size:401K apt
apt30gt60brg.pdf 

TYPICAL PERFORMANCE CURVES APT30GT60BR(G) 600V APT30GT60BR APT30GT60BRG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT The Thunderblot IGBT is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT offers superior ruggedness and ultrafast switching speed. G C E Low Forward Voltage Drop Hig
8.14. Size:24K apt
apt30gt60br.pdf 

APT30GT60BR 600V 58A Thunderbolt IGBT TO-247 The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT offers superior ruggedness and ultrafast switching speed. G Low Forward Voltage Drop High Freq. Switching to 150KHz C C E Low Tail Current Ultra Low Leakage Current Avalanche Rated
8.15. Size:170K apt
apt30gt60brdq2g.pdf 

TYPICAL PERFORMANCE CURVES APT30GT60BRDQ2(G) 600V APT30GT60BRDQ2 APT30GT60BRDQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT The Thunderblot IGBT is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT offers superior ruggedness and ultrafast switching speed. G C E Low Forward Voltage Dro
8.16. Size:211K apt
apt30gp60bsc.pdf 

TYPICAL PREFORMANCE CURVES APT30GP60BSC APT30GP60BSC 600V POWER MOS 7 IGBT TO-247 A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode G power supplies and tail current sensitive applications. In many cases, the C
8.17. Size:266K microsemi
apt30gs60srdq2g.pdf 

APT30GS60BRDQ2(G) APT30GS60SRDQ2(G) 600V, 30A, VCE(ON) = 2.8V Typical Thunderbolt High Speed NPT IGBT with Anti-Parallel 'DQ' Diode The Thunderbolt HS series is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt series, but trades higher VCE(ON) for significantly lower turn-on energy Eoff. The low switching losses enable operation at switching frequ
8.18. Size:266K microsemi
apt30gs60brdq2g.pdf 

APT30GS60BRDQ2(G) APT30GS60SRDQ2(G) 600V, 30A, VCE(ON) = 2.8V Typical Thunderbolt High Speed NPT IGBT with Anti-Parallel 'DQ' Diode The Thunderbolt HS series is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt series, but trades higher VCE(ON) for significantly lower turn-on energy Eoff. The low switching losses enable operation at switching frequ
8.19. Size:140K microsemi
apt30gn60kg.pdf 

TYPICAL PERFORMANCE CURVES APT30GN60K(G) 600V APT30GN60K APT30GN60KG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a
8.20. Size:192K microsemi
apt30gt60brdlg.pdf 

TYPICAL PERFORMANCE CURVES APT30GT60BRDL(G) 600V APT30GT60BRDL(G) *G Denotes RoHS Compliant, Pb Free Terminal Finish. Resonant Mode Combi IGBT The Thunderbolt IGBT used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT offers superior ruggedness and ultrafast switching speed. Typical Applicatio
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