Справочник IGBT. APT30GP60BDF1

 

APT30GP60BDF1 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: APT30GP60BDF1
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 463 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 100 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.2 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6 V
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 18 nS
   Coesⓘ - Выходная емкость, типовая: 295 pF
   Qgⓘ - Общий заряд затвора, typ: 90 nC
   Тип корпуса: TO247

 Аналог (замена) для APT30GP60BDF1

 

 

APT30GP60BDF1 Datasheet (PDF)

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 apt30gp60bdf1.pdf

APT30GP60BDF1 APT30GP60BDF1

TYPICAL PERFORMANCE CURVESAPT30GP60BDF1APT30GP60BDF1600V POWER MOS 7 IGBTTO-247A new generation of high voltage power IGBTs. Using punch-throughtechnology and a proprietary metal gate, this IGBT has been optimized for veryfast switching, making it ideal for high frequency, high voltage switch-modeGpower supplies and tail current sensitive applications. In many cases, the

 3.1. Size:433K  apt
 apt30gp60bdq1g.pdf

APT30GP60BDF1 APT30GP60BDF1

TYPICAL PERFORMANCE CURVES APT30GP60BDQ1(G) 600V APT30GP60BDQ1 APT30GP60BDQ1G**G Denotes RoHS Compliant, Pb Free Terminal Finish.POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency swi

 4.1. Size:90K  apt
 apt30gp60b.pdf

APT30GP60BDF1 APT30GP60BDF1

APT30GP60B600V POWER MOS 7 IGBTA new generation of high voltage power IGBTs. Using punch-throughTO-247technology and a proprietary metal gate, this IGBT has been optimized forvery fast switching, making it ideal for high frequency, high voltage switch-mode power supplies and tail current sensitive applications. In many cases,the POWER MOS 7 IGBT provides a lower cost alter

 4.2. Size:687K  apt
 apt30gn60sg apt30gp60bg.pdf

APT30GP60BDF1 APT30GP60BDF1

APT30GP60BAPT30GP60S600VB POWER MOS 7 IGBTD3PAKA new generation of high voltage power IGBTs. Using punch-throughtechnology and a proprietary metal gate, this IGBT has been optimized forSCvery fast switching, making it ideal for high frequency, high voltage switch-G Emode power supplies and tail current sensitive applications. In many cases,the POWER MOS 7 IGBT pr

 4.3. Size:211K  apt
 apt30gp60bsc.pdf

APT30GP60BDF1 APT30GP60BDF1

TYPICAL PREFORMANCE CURVES APT30GP60BSCAPT30GP60BSC600V POWER MOS 7 IGBTTO-247A new generation of high voltage power IGBTs. Using punch-throughtechnology and a proprietary metal gate, this IGBT has been optimized for veryfast switching, making it ideal for high frequency, high voltage switch-modeGpower supplies and tail current sensitive applications. In many cases, theC

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