APT32GU30B - аналоги, параметры транзистора - Справочник транзисторов

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APT32GU30B 300V POWER MOS 7 IGBT TO-247 The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C E Low Conduction Loss SSOA rated C Low Gate Charge G Ultrafast Tai

9.1. Size:180K microsemi
apt32m80j.pdf pdf_icon

APT32M80J 800V, 33A, 0.19 Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar strip design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate resistance and capacitance of the poly-silicon gat

9.2. Size:214K microsemi
apt32f120j.pdf pdf_icon

APT32F120J 1200V, 33A, 0.32 Max, trr 430ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, hi

Другие IGBT... APT30GP60BDF1 , APT30GP60BSC , APT30GP60JDF1 , APT30GT60AR , APT30GT60BR , APT30GT60BRD , APT30GT60CR , APT30GT60KR , MBQ50T65FDSC , APT33GF120B2RD , APT33GF120BR , APT33GF120HR , APT35GN120B , APT35GP120B , APT35GP120B2DF2 , APT35GP120J , APT35GP120JDF2 .