APT33GF120BR - аналоги, основные параметры, даташиты
Наименование: APT33GF120BR
Тип транзистора: IGBT
Тип управляющего канала: N
Предельные значения
Pc ⓘ - Максимальная рассеиваемая мощность: 297 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic| ⓘ - Максимальный постоянный ток коллектора: 52 A @25℃
Tj ⓘ - Максимальная температура перехода: 150 ℃
Электрические характеристики
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.7 V @25℃
tr ⓘ - Время нарастания типовое: 85 nS
Coesⓘ - Выходная емкость, типовая: 230 pF
Тип корпуса: TO247
Аналог (замена) для APT33GF120BR
- подбор ⓘ IGBT транзистора по параметрам
APT33GF120BR даташит
apt33gf120br.pdf
APT33GF120BR APT33GF120BR 1200V 52A Fast IGBT The Fast IGBT is a new generation of high voltage power IGBTs. Using TO-247 Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and low Collector-Emitter On voltage. Low Forward Voltage Drop Ultra Low Leakage Current C Low Tail Current G C RBSOA and SCSOA Rated E G High Freq
apt33gf120brg.pdf
APT33GF120BR APT33GF120BR 1200V 52A Fast IGBT The Fast IGBT is a new generation of high voltage power IGBTs. Using TO-247 Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and low Collector-Emitter On voltage. Low Forward Voltage Drop Ultra Low Leakage Current C Low Tail Current G C RBSOA and SCSOA Rated E G High Freq
apt33gf120b2rd apt33gf120lrd.pdf
APT33GF120B2RD/LRD APT33GF120B2RD APT33GF120LRD 1200V 52A APT33GF120B2RD Fast IGBT & FRED T-Max TO-264 (B2RD) The Fast IGBT is a new generation of high voltage power IGBTs. Using Non- (LRD) Punch Through Technology the Fast IGBT combined with an APT free- wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed. G G C L
apt33gf120b2rd.pdf
APT33GF120B2RD APT33GF120LRD 1200V 52A APT33GF120B2RD Fast IGBT & FRED T-Max TO-264 (B2RD) The Fast IGBT is a new generation of high voltage power IGBTs. Using Non- (LRD) Punch Through Technology the Fast IGBT combined with an APT free- wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed. G G C Low Forward Voltage D
Другие IGBT... APT30GP60JDF1 , APT30GT60AR , APT30GT60BR , APT30GT60BRD , APT30GT60CR , APT30GT60KR , APT32GU30B , APT33GF120B2RD , GT30G124 , APT33GF120HR , APT35GN120B , APT35GP120B , APT35GP120B2DF2 , APT35GP120J , APT35GP120JDF2 , APT35GT120JU2 , APT35GT120JU3 .
History: APT35GN120B | APT25GP90BDF1 | APT35GP120J | APT20GT60CR
History: APT35GN120B | APT25GP90BDF1 | APT35GP120J | APT20GT60CR
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Список транзисторов
Обновления
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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