HGT1S11N120CNS datasheet, аналоги, основные параметры
Наименование: HGT1S11N120CNS 📄📄
Тип транзистора: IGBT
Тип управляющего канала: N
Предельные значения
Pc ⓘ - Максимальная рассеиваемая мощность: 298 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic| ⓘ - Максимальный постоянный ток коллектора: 43 A @25℃
Tj ⓘ - Максимальная температура перехода: 150 ℃
Электрические характеристики
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.1 V @25℃
tr ⓘ - Время нарастания типовое: 12 nS
Тип корпуса: TO263
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Аналог (замена) для HGT1S11N120CNS
- подбор ⓘ IGBT транзистора по параметрам
HGT1S11N120CNS даташит
1.1. Size:138K fairchild semi
hgtg11n120cn hgtp11n120cn hgt1s11n120cn.pdf 
HGTG11N120CN, HGTP11N120CN, HGT1S11N120CNS Data Sheet December 2001 43A, 1200V, NPT Series N-Channel IGBT Features The HGTG11N120CN, HGTP11N120CN, and 43A, 1200V, TC = 25oC HGT1S11N120CNS are Non-Punch Through (NPT) IGBT 1200V Switching SOA Capability designs. They are new members of the MOS gated high Typical Fall Time. . . . . . . . . . . . . . . . 340ns at TJ = 150oC
8.1. Size:85K 1
hgtp2n120bn hgtd2n120bns hgt1s120bns.pdf 
HGTP2N120BN, HGTD2N120BNS, HGT1S2N120BNS Data Sheet January 2000 File Number 4696.2 12A, 1200V, NPT Series N-Channel IGBT Features The HGTP2N120BN, HGTD2N120BNS, and 12A, 1200V, TC = 25oC HGT1S2N120BNS are Non-Punch Through (NPT) IGBT 1200V Switching SOA Capability designs. They are new members of the MOS gated high Typical Fall Time. . . . . . . . . . . . . . . . 160ns at
8.4. Size:115K 1
hgtp12n60a4 hgtg12n60a4 hgt1s12n60a4s.pdf 
HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S Data Sheet May 1999 File Number 4656.2 600V, SMPS Series N-Channel IGBT Features The HGTP12N60A4, HGTG12N60A4 and >100kHz Operation at 390V, 12A HGT1S12N60A4S are MOS gated high voltage switching 200kHz Operation at 390V, 9A devices combining the best features of MOSFETs and 600V Switching SOA Capability bipolar transistors. These de
8.8. Size:169K 1
hgt1s12n60c3s9a.pdf 
HGTP12N60C3, HGT1S12N60C3S Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBTs Features The HGTP12N60C3 and HGT1S12N60C3S are MOS gated 24A, 600V at TC = 25oC high voltage switching devices combining the best features 600V Switching SOA Capability of MOSFETs and bipolar transistors. These devices have the Typical Fall Time. . . . . . . . . . . . . . . . 230ns a
8.9. Size:75K 1
hgtp1n120bnd hgt1s1n120bnds hgt1s1n120bnds9a.pdf 
HGTP1N120BND, HGT1S1N120BNDS Data Sheet January 2000 File Number 4650.2 5.3A, 1200V, NPT Series N-Channel IGBT Features with Anti-Parallel Hyperfast Diode 5.3A, 1200V, TC = 25oC The HGTP1N120BND and the HGT1S1N120BNDS are 1200V Switching SOA Capability Non-Punch Through (NPT) IGBT designs. They are new Typical EOFF. . . . . . . . . . . . . . . . . . . 120 J at TJ = 150oC
8.11. Size:107K 1
hgtp1n120cnd hgt1s1n120cnds.pdf 
HGTP1N120CND, HGT1S1N120CNDS Data Sheet December 2001 6.2A, 1200V, NPT Series N-Channel IGBT Features with Anti-Parallel Hyperfast Diode 6.2A, 1200V, TC = 25oC The HGTP1N120CND and the HGT1S1N120CNDS are 1200V Switching SOA Capability Non-Punch Through (NPT) IGBT designs. They are new Typical EOFF . . . . . . . . . . . . . . . . . . 200 J at TJ = 150oC members of the MOS
8.13. Size:173K fairchild semi
hgtg12n60a4d hgtp12n60a4d hgt1s12n60a4d.pdf 
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Features Anti-Parallel Hyperfast Diode >100kHz Operation . . . . . . . . . . . . . . . . . . . . . 390V, 12A The HGTG12N60A4D, HGTP12N60A4D and 200kHz Operation . . . . . . . . . . . . . . . . . . . . . . . 390V, 9A HGT1S12N60A4DS are MOS gated high voltage switching
8.14. Size:196K fairchild semi
hgt1s10n120bn hgth10n120bn hgtp10n120bn.pdf 
HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Data Sheet August 2002 35A, 1200V, NPT Series N-Channel IGBT Features The HGTG10N120BN, HGTP10N120BN and 35A, 1200V, TC = 25oC HGT1S10N120BNS are Non-Punch Through (NPT) IGBT 1200V Switching SOA Capability designs. They are new members of the MOS gated high Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 150oC vo
8.15. Size:207K fairchild semi
hgtg12n60a4 hgtp12n60a4 hgt1s12n60a4.pdf 
HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A Data Sheet August 2003 600V, SMPS Series N-Channel IGBTs Features The HGTP12N60A4, HGTG12N60A4 and >100kHz Operation at 390V, 12A HGT1S12N60A4S9A are MOS gated high voltage switching 200kHz Operation at 390V, 9A devices combining the best features of MOSFETs and 600V Switching SOA Capability bipolar transistors. These devices ha
8.16. Size:169K fairchild semi
hgtp12n60c3 hgt1s12n60c3.pdf 
HGTP12N60C3, HGT1S12N60C3S Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBTs Features The HGTP12N60C3 and HGT1S12N60C3S are MOS gated 24A, 600V at TC = 25oC high voltage switching devices combining the best features 600V Switching SOA Capability of MOSFETs and bipolar transistors. These devices have the Typical Fall Time. . . . . . . . . . . . . . . . 230ns a
8.17. Size:151K fairchild semi
hgtp12n60c3d hgt1s12n60c3d.pdf 
HGTP12N60C3D, HGT1S12N60C3DS Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBT Features with Anti-Parallel Hyperfast Diodes 24A, 600V at TC = 25oC This family of MOS gated high voltage switching devices Typical Fall Time at TJ = 150oC . . . . . . . . . . . . . . . . 210ns combine the best features of MOSFETs and bipolar Short Circuit Rating transistors. The
8.18. Size:574K onsemi
hgtg12n60a4d hgtp12n60a4d hgt1s12n60a4ds.pdf 
SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600 V HGTG12N60A4D, www.onsemi.com HGTP12N60A4D, HGT1S12N60A4DS C The HGTG12N60A4D, HGTP12N60A4D and HGT1S12N60A4DS are MOS gated high voltage switching devices G combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the E low on-state conduction los
8.19. Size:296K onsemi
hgtg10n120bn hgtp10n120bn hgt1s10n120bns.pdf 
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
8.20. Size:271K onsemi
hgtp12n60c3d hgt1s12n60c3ds.pdf 
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Другие IGBT... GT8G121, GT8G121LB, GT8J101, GT8J102, GT8N101, GT8Q101, GT8Q102, HGT1S10N120BNS, IRG4PC50W, HGT1S12N60A4DS, HGT1S12N60A4S, HGT1S12N60B3, HGT1S12N60B3D, HGT1S12N60B3DS, HGT1S12N60B3S, HGT1S12N60C3, HGT1S12N60C3D
