APT40GP90J - аналоги и описание IGBT

 

APT40GP90J - аналоги, основные параметры, даташиты

Наименование: APT40GP90J

Тип транзистора: IGBT

Тип управляющего канала: N

Предельные значения

Pc ⓘ - Максимальная рассеиваемая мощность: 284 W

|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 900 V

|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V

|Ic| ⓘ - Максимальный постоянный ток коллектора: 68 A @25℃

Tj ⓘ - Максимальная температура перехода: 150 ℃

Электрические характеристики

|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 3.2 V @25℃

tr ⓘ - Время нарастания типовое: 27 nS

Coesⓘ - Выходная емкость, типовая: 325 pF

Тип корпуса: SOT227

 Аналог (замена) для APT40GP90J

- подбор ⓘ IGBT транзистора по параметрам

 

APT40GP90J даташит

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apt40gp90j.pdfpdf_icon

APT40GP90J

TYPICAL PERFORMANCE CURVES APT40GP90J APT40GP90J 900V POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, "UL Recognized" high voltage switching applications and has been optimized for high frequency ISOTOP switchmode power supplies. Low Conduction Loss SSOA Rat

 0.1. Size:455K  apt
apt40gp90jdq2.pdfpdf_icon

APT40GP90J

TYPICAL PERFORMANCE CURVES APT40GP90JDQ2 900V APT40GP90JDQ2 POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. "UL Recognized" ISOTOP file # E145592 Low

 0.2. Size:206K  apt
apt40gp90jdf2.pdfpdf_icon

APT40GP90J

TYPICAL PERFORMANCE CURVES APT40GP90JDF2 APT40GP90JDF2 900V POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, "UL Recognized" high voltage switching applications and has been optimized for high frequency ISOTOP switchmode power supplies. Low Conduction Loss SS

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apt40gp90b2dq2g.pdfpdf_icon

APT40GP90J

TYPICAL PERFORMANCE CURVES APT40GP90B2DQ2(G) 900V APT40GP90B2DQ2 APT40GP90B2DQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT T-Max The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high f

Другие IGBT... APT35GT120JU3 , APT40GF120JRD , APT40GP60B , APT40GP60B2DF2 , APT40GP60J , APT40GP60JDF2 , APT40GP90B , APT40GP90B2DF2 , CRG40T60AK3HD , APT40GP90JDF2 , APT40GT60BR , APT45GP120B , APT45GP120B2DF2 , APT45GP120J , APT45GP120JDF2 , APT50GF120B2R , APT50GF120JRD .

History: TSG40N120CE | APT40GP60B2DQ2G | GT50J121 | IRGS4620D

 

 

 

 

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