APT40GP90J - аналоги, основные параметры, даташиты
Наименование: APT40GP90J
Тип транзистора: IGBT
Тип управляющего канала: N
Предельные значения
Pc ⓘ - Максимальная рассеиваемая мощность: 284 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 900 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic| ⓘ - Максимальный постоянный ток коллектора: 68 A @25℃
Tj ⓘ - Максимальная температура перехода: 150 ℃
Электрические характеристики
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 3.2 V @25℃
tr ⓘ - Время нарастания типовое: 27 nS
Coesⓘ - Выходная емкость, типовая: 325 pF
Тип корпуса: SOT227
Аналог (замена) для APT40GP90J
- подбор ⓘ IGBT транзистора по параметрам
APT40GP90J даташит
apt40gp90j.pdf
TYPICAL PERFORMANCE CURVES APT40GP90J APT40GP90J 900V POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, "UL Recognized" high voltage switching applications and has been optimized for high frequency ISOTOP switchmode power supplies. Low Conduction Loss SSOA Rat
apt40gp90jdq2.pdf
TYPICAL PERFORMANCE CURVES APT40GP90JDQ2 900V APT40GP90JDQ2 POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. "UL Recognized" ISOTOP file # E145592 Low
apt40gp90jdf2.pdf
TYPICAL PERFORMANCE CURVES APT40GP90JDF2 APT40GP90JDF2 900V POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, "UL Recognized" high voltage switching applications and has been optimized for high frequency ISOTOP switchmode power supplies. Low Conduction Loss SS
apt40gp90b2dq2g.pdf
TYPICAL PERFORMANCE CURVES APT40GP90B2DQ2(G) 900V APT40GP90B2DQ2 APT40GP90B2DQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT T-Max The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high f
Другие IGBT... APT35GT120JU3 , APT40GF120JRD , APT40GP60B , APT40GP60B2DF2 , APT40GP60J , APT40GP60JDF2 , APT40GP90B , APT40GP90B2DF2 , CRG40T60AK3HD , APT40GP90JDF2 , APT40GT60BR , APT45GP120B , APT45GP120B2DF2 , APT45GP120J , APT45GP120JDF2 , APT50GF120B2R , APT50GF120JRD .
History: TSG40N120CE | APT40GP60B2DQ2G | GT50J121 | IRGS4620D
History: TSG40N120CE | APT40GP60B2DQ2G | GT50J121 | IRGS4620D
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Список транзисторов
Обновления
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