Справочник IGBT. APT40GP90JDF2

 

APT40GP90JDF2 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: APT40GP90JDF2
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 284 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 900 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 68 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 3.2 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6 V
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 27 nS
   Coesⓘ - Выходная емкость, типовая: 325 pF
   Qgⓘ - Общий заряд затвора, typ: 145 nC
   Тип корпуса: SOT227

 Аналог (замена) для APT40GP90JDF2

 

 

APT40GP90JDF2 Datasheet (PDF)

 ..1. Size:206K  apt
 apt40gp90jdf2.pdf

APT40GP90JDF2 APT40GP90JDF2

TYPICAL PERFORMANCE CURVES APT40GP90JDF2APT40GP90JDF2900V POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,"UL Recognized"high voltage switching applications and has been optimized for high frequencyISOTOPswitchmode power supplies. Low Conduction Loss SS

 3.1. Size:455K  apt
 apt40gp90jdq2.pdf

APT40GP90JDF2 APT40GP90JDF2

TYPICAL PERFORMANCE CURVES APT40GP90JDQ2 900V APT40GP90JDQ2POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies."UL Recognized"ISOTOP file # E145592 Low

 4.1. Size:170K  apt
 apt40gp90j.pdf

APT40GP90JDF2 APT40GP90JDF2

TYPICAL PERFORMANCE CURVES APT40GP90JAPT40GP90J900V POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,"UL Recognized"high voltage switching applications and has been optimized for high frequencyISOTOPswitchmode power supplies. Low Conduction Loss SSOA Rat

 5.1. Size:440K  apt
 apt40gp90b2dq2g.pdf

APT40GP90JDF2 APT40GP90JDF2

TYPICAL PERFORMANCE CURVES APT40GP90B2DQ2(G) 900V APT40GP90B2DQ2 APT40GP90B2DQ2G**G Denotes RoHS Compliant, Pb Free Terminal Finish.POWER MOS 7 IGBTT-MaxThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high f

 5.2. Size:159K  apt
 apt40gp90bg.pdf

APT40GP90JDF2 APT40GP90JDF2

TYPICAL PERFORMANCE CURVES APT40GP90BAPT40GP90B900V POWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies. GCE Low Conduction Loss SSOA RatedC

 5.3. Size:162K  apt
 apt40gp90b.pdf

APT40GP90JDF2 APT40GP90JDF2

TYPICAL PERFORMANCE CURVES APT40GP90BAPT40GP90B900V POWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies. GCE Low Conduction Loss SSOA RatedC

 5.4. Size:192K  apt
 apt40gp90b2df2.pdf

APT40GP90JDF2 APT40GP90JDF2

TYPICAL PERFORMANCE CURVESAPT40GP90B2DF2APT40GP90B2DF2900V POWER MOS 7 IGBTT-MaxTMThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies.GCE Low Conduction Loss SSOA R

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