APT50GF120B2R - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: APT50GF120B2R
Тип транзистора: IGBT
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 390 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 80 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.9 V @25℃
|VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6.5 V
Tjⓘ - Максимальная температура перехода: 150 ℃
trⓘ - Время нарастания типовое: 245 nS
Coesⓘ - Выходная емкость, типовая: 330 pF
Qgⓘ - Общий заряд затвора, typ: 330 nC
Тип корпуса: TMAX
Аналог (замена) для APT50GF120B2R
APT50GF120B2R Datasheet (PDF)
apt50gf120b2r.pdf
APT50GF120B2RAPT50GF120LR1200V 80AAPT50GF120B2RFast IGBTT-MaxTO-264(B2R)(LR)The Fast IGBT is a new generation of high voltage power IGBTs. UsingNon-Punch Through Technology the Fast IGBT offers superior ruggedness,fast switching speed and low Collector-Emitter On voltage.GC G Low Forward Voltage Drop High Freq. Switching to 20KHzE CAPT50GF120LRC E
apt50gf120b2rg.pdf
TYPICAL PERFORMANCE CURVES APT50GF120B2_LR(G) 1200V APT50GF120B2R APT50GF120LR APT50GF120B2RG* APT50GF120LRG**G Denotes RoHS Compliant, Pb Free Terminal Finish.(B2)FAST IGBTT-Max TO-264The Fast IGBT is a new generation of high voltage power IGBTs. Using (L)Non-Punch through technology, the Fast IGBToffers superior ruggedness, fast switching speed and low Collector-Emitt
apt50gf120hr.pdf
APT50GF120HR1200V 62AFast IGBTTO-258The Fast IGBT is a new generation of high voltage power IGBTs. UsingNon-Punch Through Technology the Fast IGBT offers superior ruggedness,fast switching speed and low Collector-Emitter On voltage. Low Forward Voltage Drop High Freq. Switching to 20KHzCCE Low Tail Current Ultra Low Leakage CurrentGG Avalanche Rated
apt50gf120jrdq3.pdf
TYPICAL PERFORMANCE CURVES APT50GF120JRDQ3 1200V APT50GF120JRDQ3FAST IGBT & FREDThe Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epi-taxial Diode (FRED) offers superior ruggedness and fast switching speed."UL Recognized"ISOTOP file # E145592 Low Forwa
apt50gf120jrd.pdf
APT50GF120JRD1200V 75AFast IGBT & FREDThe Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT combined with an APT free-wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superiorruggedness and fast switching speed."UL Recognized"ISOTOP Low Forward Voltage Drop High Freq. Switching to 20KHzC L
apt50gf120lrg.pdf
TYPICAL PERFORMANCE CURVES APT50GF120B2_LR(G) 1200V APT50GF120B2R APT50GF120LR APT50GF120B2RG* APT50GF120LRG**G Denotes RoHS Compliant, Pb Free Terminal Finish.(B2)FAST IGBTT-Max TO-264The Fast IGBT is a new generation of high voltage power IGBTs. Using (L)Non-Punch through technology, the Fast IGBToffers superior ruggedness, fast switching speed and low Collector-Emitt
Другие IGBT... APT40GP90B2DF2 , APT40GP90J , APT40GP90JDF2 , APT40GT60BR , APT45GP120B , APT45GP120B2DF2 , APT45GP120J , APT45GP120JDF2 , RJH3047 , APT50GF120JRD , APT50GF60B2RD , APT50GF60BR , APT50GF60HR , APT50GF60JU2 , APT50GF60JU3 , APT50GN120B2 , APT50GP60B .
Список транзисторов
Обновления
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