Справочник IGBT. APT65GP60L2DF2

 

APT65GP60L2DF2 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: APT65GP60L2DF2
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 833 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 100 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.2 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6 V
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 55 nS
   Coesⓘ - Выходная емкость, типовая: 580 pF
   Qgⓘ - Общий заряд затвора, typ: 210 nC
   Тип корпуса: TO264

 Аналог (замена) для APT65GP60L2DF2

 

 

APT65GP60L2DF2 Datasheet (PDF)

 ..1. Size:197K  apt
 apt65gp60l2df2.pdf

APT65GP60L2DF2 APT65GP60L2DF2

TYPICAL PERFORMANCE CURVES APT65GP60L2DF2APT65GP60L2DF2600V POWER MOS 7 IGBTTO-264MaxThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies.GC Low Conduction Loss 100 kH

 2.1. Size:444K  apt
 apt65gp60l2dq2g.pdf

APT65GP60L2DF2 APT65GP60L2DF2

TYPICAL PERFORMANCE CURVES APT65GP60L2DQ2 600V APT65GP60L2DQ2 APT65GP60L2DQ2G**G Denotes RoHS Compliant, Pb Free Terminal Finish.POWER MOS 7 IGBTTO-264MaxThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high

 5.1. Size:96K  apt
 apt65gp60j.pdf

APT65GP60L2DF2 APT65GP60L2DF2

APT65GP60J600V POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequency"UL Recognized"switchmode power supplies. ISOTOP Low Conduction Loss 100 kHz operation @ 400V, 33AC Low Gate

 5.2. Size:478K  apt
 apt65gp60jdq2.pdf

APT65GP60L2DF2 APT65GP60L2DF2

TYPICAL PERFORMANCE CURVES APT65GP60JDQ2 600V APT65GP60JDQ2POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies."UL Recognized"ISOTOP file # E145592 Low

 5.3. Size:88K  apt
 apt65gp60b2.pdf

APT65GP60L2DF2 APT65GP60L2DF2

APT65GP60B2600V POWER MOS 7 IGBTT-MaxTMThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies.GCE Low Conduction Loss 100 kHz operation @ 400V, 54AC Low Gate Charge

 5.4. Size:90K  apt
 apt65gp60b2g.pdf

APT65GP60L2DF2 APT65GP60L2DF2

APT65GP60B2600V POWER MOS 7 IGBTT-MaxTMThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies.GCE Low Conduction Loss 100 kHz operation @ 400V, 54AC Low Gate Charge

 5.5. Size:204K  apt
 apt65gp60jdf2.pdf

APT65GP60L2DF2 APT65GP60L2DF2

TYPICAL PERFORMANCE CURVES APT65GP60JDF2APT65GP60JDF2600V POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequency"UL Recognized"switchmode power supplies. ISOTOP Low Conduction Loss 1

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