Справочник IGBT. FGW50N60H

 

FGW50N60H - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: FGW50N60H
   Тип транзистора: IGBT
   Маркировка: 50G60H
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 360 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 95 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.5 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6 V
   Tjⓘ - Максимальная температура перехода: 175 ℃
   trⓘ - Время нарастания типовое: 75 nS
   Coesⓘ - Выходная емкость, типовая: 210 pF
   Qgⓘ - Общий заряд затвора, typ: 305 nC
   Тип корпуса: TO247

 Аналог (замена) для FGW50N60H

 

 

FGW50N60H Datasheet (PDF)

 ..1. Size:565K  fuji
 fgw50n60h.pdf

FGW50N60H FGW50N60H

http://www.fujielectric.com/products/semiconductor/FGW50N60H Discrete IGBTDiscrete IGBT (High-Speed V series)600V / 50AFeaturesLow power lossLow switching surge and noiseHigh reliability, high ruggedness (RBSOA, SCSOA etc.)ApplicationsUninterruptible power supplyPower coditionnerPower factor correction circuitMaximum Ratings and Characteristics Equivalent circuit Absol

 0.1. Size:560K  fuji
 fgw50n60hd.pdf

FGW50N60H FGW50N60H

http://www.fujielectric.com/products/semiconductor/FGW50N60HD Discrete IGBTDiscrete IGBT (High-Speed V series)600V / 50AFeaturesLow power lossLow switching surge and noiseHigh reliability, high ruggedness (RBSOA, SCSOA etc.)ApplicationsUninterruptible power supplyPower coditionnerPower factor correction circuitMaximum Ratings and Characteristics Equivalent circuit Abso

 0.2. Size:569K  fuji
 fgw50n60hc.pdf

FGW50N60H FGW50N60H

http://www.fujielectric.com/products/semiconductor/FGW50N60HC Discrete IGBTDiscrete IGBT (High-Speed V series)600V / 50AFeaturesLow power lossLow switching surge and noiseHigh reliability, high ruggedness (RBSOA, SCSOA etc.)ApplicationsUninterruptible power supplyPower coditionnerPower factor correction circuitMaximum Ratings and Characteristics Equivalent circuit Abso

 6.1. Size:625K  fuji
 fgw50n60vda.pdf

FGW50N60H FGW50N60H

http://www.fujielectric.com/products/semiconductor/FGW50N60VD Discrete IGBTDiscrete IGBT (High-Speed V series)600V / 50AFeaturesLow power lossLow switching surge and noiseHigh reliability, high ruggedness (RBSOA, SCSOA etc.)ApplicationsInverter for Motor driveAC and DC Servo drive amplifierUninterruptible power supplyMaximum Ratings and Characteristics Equivalent circuit

Другие IGBT... FGW25N120W , FGW25N120WD , FGW30N120H , FGW30N120HD , FGW30N60VD , FGW35N60H , FGW35N60HC , FGW35N60HD , HGTG30N60A4 , FGW50N60HC , FGW50N60HD , FGW50N60VD , FGW75N60H , FGW75N60HD , FGW85N60RB , 1MBH60-100 , FGL40N120AN .

 

 
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