Справочник IGBT. BT15N60A9F

 

BT15N60A9F - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: BT15N60A9F
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Максимальная рассеиваемая мощность (Pc), W: 25
   Предельно-допустимое напряжение коллектор-эмиттер |Vce|, V: 600
   Максимально допустимое напряжение эмиттер-затвор |Vge|, V: 20
   Максимальный постоянный ток коллектора |Ic| @25℃, A: 30
   Напряжение насыщения коллектор-эмиттер типовое |VCE(sat)|, V: 2.1
   Максимальная температура перехода (Tj), ℃: 150
   Время нарастания типовое (tr), nS: 18
   Емкость коллектора типовая (Cc), pf: 94
   Тип корпуса: TO220F

 Аналог (замена) для BT15N60A9F

 

 

BT15N60A9F Datasheet (PDF)

 ..1. Size:102K  crhj
 bt15n60a9f.pdf

BT15N60A9F BT15N60A9F

Silicon FS Planar IGBT R BT15N60A9F General Description VCES 600 V Using HUAJING's proprietary Planar design and advanced FS IC 15 A technology, the 600V FSIGBT offers superior conduction and switching Ptot TC=25 25 W performances, high avalanche ruggedness and easy parallel operation. VCE(SAT) 2.1 V Features FS Planar Technology, Positive temperature coeff

 ..2. Size:102K  wuxi china
 bt15n60a9f.pdf

BT15N60A9F BT15N60A9F

Silicon FS Planar IGBT R BT15N60A9F General Description VCES 600 V Using HUAJING's proprietary Planar design and advanced FS IC 15 A technology, the 600V FSIGBT offers superior conduction and switching Ptot TC=25 25 W performances, high avalanche ruggedness and easy parallel operation. VCE(SAT) 2.1 V Features FS Planar Technology, Positive temperature coeff

 9.1. Size:155K  1
 ixbh15n170 ixbt15n170.pdf

BT15N60A9F BT15N60A9F

Advanced Technical InformationVCES = 1700 VHigh Voltage, High GainIXBH 15N170BIMOSFETTM Monolithic IC25 = 25 AIXBT 15N170Bipolar MOS TransistorVCE(sat) = 3.3 VSymbol Test Conditions Maximum Ratings TO-268 (IXBT)VCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C; RGE = 1 M 1700 VGVGES Continuous 20 VE(TAB)VGEM Transient 30 VIC25 TC = 25C25 ATO-24

 9.2. Size:254K  crhj
 bt15n120anf.pdf

BT15N60A9F BT15N60A9F

Silicon FS Planar IGBT R BT15N120ANF General Description VCES 1200 V Using HUAJING's proprietary trench design and advanced FS(field IC 25 A stop) technology, the 1200V Trench FS-IGBT offers superior conduction Ptot TC=25 186 W and switching performances, high avalanche ruggedness. VCE(SAT) 2.2 V Features Trench FS Technology, Positive temperature coef

 9.3. Size:253K  wuxi china
 bt15n120anf.pdf

BT15N60A9F BT15N60A9F

Silicon FS Planar IGBT R BT15N120ANF General Description VCES 1200 V Using HUAJING's proprietary trench design and advanced FS(field IC 25 A stop) technology, the 1200V Trench FS-IGBT offers superior conduction Ptot TC=25 186 W and switching performances, high avalanche ruggedness. VCE(SAT) 2.2 V Features Trench FS Technology, Positive temperature coef

Другие IGBT... SSIG15N135H , SSIG20N135H , BT25T120ANF , BT15T120ANF , BT15N120ANF , BT40N60BNF , BT30N60ANF , BT50N60ANF , IXGH60N60 , AP25G45EM , AP25G45GEM , AP28G45GEM , AP20G45EH , AP20G45EJ , TGPF30N40P , TGPF30N43P , CPV362M4FPBF .

 

 
Back to Top