Справочник IGBT. NGTB15N60EG

 

NGTB15N60EG - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

Наименование: NGTB15N60EG

Тип управляющего канала: N-Channel

Максимальная рассеиваемая мощность (Pc): 117

Предельно-допустимое напряжение коллектор-эмиттер (Uce): 600

Напряжение насыщения коллектор-эмиттер (Ucesat): 1.7

Максимально допустимое напряжение эмиттер-затвор (Ueg): 20

Максимальный постоянный ток коллектора (Ic): 30

Максимальная температура перехода (Tj): 150

Время нарастания: 30

Емкость коллектора (Cc), pf: 64

Корпус: TO220

Аналог (замена) для NGTB15N60EG  

 

NGTB15N60EG Datasheet (PDF)

1.1. ngtb15n60s1.pdf Size:177K _igbt

NGTB15N60EG
NGTB15N60EG

NGTB15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Non-Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the IGBT is well suited for motor drive control and other hard switching http://onsemi.

1.2. ngtb15n60eg.pdf Size:176K _igbt

NGTB15N60EG
NGTB15N60EG

NGTB15N60EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Non-Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the IGBT is well suited for motor drive control and other hard switching http://onsemi.co

 3.1. ngtb15n120fl2.pdf Size:233K _igbt

NGTB15N60EG
NGTB15N60EG

NGTB15N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fa

3.2. ngtb15n120lwg.pdf Size:175K _igbt

NGTB15N60EG
NGTB15N60EG

NGTB15N120LWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated http://onsemi.com into the device

 3.3. ngtb15n120flwg.pdf Size:185K _igbt

NGTB15N60EG
NGTB15N60EG

NGTB15N120FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co-packaged free wheeling di

3.4. ngtb15n120l.pdf Size:175K _igbt

NGTB15N60EG
NGTB15N60EG

NGTB15N120LWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated http://onsemi.com into the device

 3.5. ngtb15n120ihl.pdf Size:172K _igbt

NGTB15N60EG
NGTB15N60EG

NGTB15N120IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated http://onsemi.com into the devic

3.6. ngtb15n120fl.pdf Size:185K _igbt

NGTB15N60EG
NGTB15N60EG

NGTB15N120FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co-packaged free wheeling di

3.7. ngtb15n120fl2wg.pdf Size:233K _igbt

NGTB15N60EG
NGTB15N60EG

NGTB15N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fa

3.8. ngtb15n120ihr.pdf Size:175K _igbt

NGTB15N60EG
NGTB15N60EG

NGTB15N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is http://onsemi.com well suited for resonant or soft switching appli

3.9. ngtb15n120ihwg.pdf Size:124K _igbt

NGTB15N60EG
NGTB15N60EG

NGTB15N120IHWG Product Preview IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is http://onsemi.com well suited for resonant or soft switching applications. 15 A, 1200

3.10. ngtb15n120ih.pdf Size:124K _igbt

NGTB15N60EG
NGTB15N60EG

NGTB15N120IHWG Product Preview IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is http://onsemi.com well suited for resonant or soft switching applications. 15 A, 1200

3.11. ngtb15n120ihrwg.pdf Size:175K _igbt

NGTB15N60EG
NGTB15N60EG

NGTB15N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is http://onsemi.com well suited for resonant or soft switching appli

3.12. ngtb15n135ihr.pdf Size:194K _igbt

NGTB15N60EG
NGTB15N60EG

NGTB15N135IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is http://onsemi.com well suited for resonant or soft switching appli

Другие IGBT... CPV362M4FPBF , CPV362M4UPBF , CPV364M4UPBF , CPV364M4FPBF , CPV364M4KPBF , IRGSL4B60K , NGTB15N60S1 , NGTG15N60S1 , FGA25N120ANTD , IXYY8N90C3 , STGP19NC60K , AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 .

 

 
Back to Top

 


NGTB15N60EG
  NGTB15N60EG
  NGTB15N60EG
  NGTB15N60EG
 

social 

Список транзисторов

Обновления

IGBT: RJP30H2A | GT50JR22 | IRGC16B60KB | IRGC16B120KB | IRGC15B120UB | IRGC15B120KB | IRGC100B60UB | IRGC100B60KB | IRGC100B120UB | IRGC100B120KB |
 

 

 

 
Back to Top