Справочник IGBT. APT20GF120SRDQ1G

 

APT20GF120SRDQ1G - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: APT20GF120SRDQ1G
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 200 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 30 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 20 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 3.3 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6.5 V
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 9 nS
   Coesⓘ - Выходная емкость, типовая: 125 pF
   Qgⓘ - Общий заряд затвора, typ: 100 nC
   Тип корпуса: TO268AB

 Аналог (замена) для APT20GF120SRDQ1G

 

 

APT20GF120SRDQ1G Datasheet (PDF)

 0.1. Size:446K  apt
apt20gf120srdq1g.pdf

APT20GF120SRDQ1G
APT20GF120SRDQ1G

TYPICAL PERFORMANCE CURVES APT20GF120B_SRDQ1(G) 1200V APT20GF120BRDQ1 APT20GF120SRDQ1APT20GF120BRDQ1G* APT20GF120SRDQ1G**G Denotes RoHS Compliant, Pb Free Terminal Finish.(B)FAST IGBT & FREDD3PAK(S)CThe Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through G Etechnology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery

 1.1. Size:106K  apt
apt20gf120srd.pdf

APT20GF120SRDQ1G
APT20GF120SRDQ1G

APT20GF120BRDAPT20GF120SRD1200V 32AFast IGBT & FREDTO-247The Fast IGBT is a new generation of high voltage power IGBTs. Using Non- D3PAKPunch Through Technology the Fast IGBT combined with an APT free-wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior ruggednessGCand fast switching speed.CEG E Low Forward Voltage Drop High Freq. Switching

 4.1. Size:114K  apt
apt20gf120brd.pdf

APT20GF120SRDQ1G
APT20GF120SRDQ1G

APT20GF120BRD1200V 32AFast IGBT & FREDThe Fast IGBT is a new generation of high voltage power IGBTs. Using Non- TO-247Punch Through Technology the Fast IGBT combined with an APT free-wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superiorruggedness and fast switching speed.G Low Forward Voltage Drop High Freq. Switching to 20KHzCCE Low Tail Cur

 4.2. Size:81K  apt
apt20gf120krg.pdf

APT20GF120SRDQ1G
APT20GF120SRDQ1G

APT20GF120KRAPT20GF120KR1200V 32AFast IGBTTO-220The Fast IGBT is a new generation of high voltage power IGBTs. UsingNon-Punch Through Technology the Fast IGBT offers superior ruggedness,fast switching speed and low Collector-Emitter On voltage. Low Forward Voltage Drop High Freq. Switching to 20KHzCGC Low Tail Current Ultra Low Leakage CurrentE Avala

 4.3. Size:72K  apt
apt20gf120kr.pdf

APT20GF120SRDQ1G
APT20GF120SRDQ1G

APT20GF120KR1200V 32AFast IGBTTO-220The Fast IGBT is a new generation of high voltage power IGBTs. UsingNon-Punch Through Technology the Fast IGBT offers superior ruggedness,fast switching speed and low Collector-Emitter On voltage.GC Low Forward Voltage Drop High Freq. Switching to 20KHzEC Low Tail Current Ultra Low Leakage Current Avalanche Rated

 4.4. Size:73K  apt
apt20gf120br.pdf

APT20GF120SRDQ1G
APT20GF120SRDQ1G

APT20GF120BRAPT20GF120BR1200V 32AFast IGBTTO-247The Fast IGBT is a new generation of high voltage power IGBTs. UsingNon-Punch Through Technology the Fast IGBT offers superior ruggedness,fast switching speed and low Collector-Emitter On voltage.G Low Forward Voltage Drop High Freq. Switching to 20KHzCCE Low Tail Current Ultra Low Leakage Current Avala

 4.5. Size:446K  apt
apt20gf120brdq1g.pdf

APT20GF120SRDQ1G
APT20GF120SRDQ1G

TYPICAL PERFORMANCE CURVES APT20GF120B_SRDQ1(G) 1200V APT20GF120BRDQ1 APT20GF120SRDQ1APT20GF120BRDQ1G* APT20GF120SRDQ1G**G Denotes RoHS Compliant, Pb Free Terminal Finish.(B)FAST IGBT & FREDD3PAK(S)CThe Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through G Etechnology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery

 4.6. Size:84K  apt
apt20gf120brg.pdf

APT20GF120SRDQ1G
APT20GF120SRDQ1G

APT20GF120BRAPT20GF120BR1200V 32AFast IGBTTO-247The Fast IGBT is a new generation of high voltage power IGBTs. UsingNon-Punch Through Technology the Fast IGBT offers superior ruggedness,fast switching speed and low Collector-Emitter On voltage.G Low Forward Voltage Drop High Freq. Switching to 20KHzCCE Low Tail Current Ultra Low Leakage Current Avala

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