APT20GF120SRDQ1G - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

Наименование: APT20GF120SRDQ1G

Тип управляющего канала: N-Channel

Максимальная рассеиваемая мощность (Pc): 200

Предельно-допустимое напряжение коллектор-эмиттер (Uce): 1200

Напряжение насыщения коллектор-эмиттер (Ucesat): 3.3

Максимально допустимое напряжение эмиттер-затвор (Ueg): 30

Максимальный постоянный ток коллектора (Ic): 20

Максимальная температура перехода (Tj): 150

Время нарастания: 9

Емкость коллектора (Cc), pf: 125

Тип корпуса: TO268AB

Аналог (замена) для APT20GF120SRDQ1G

APT20GF120SRDQ1G Datasheet (PDF)

0.1. apt20gf120srdq1g.pdf Size:446K _apt

TYPICAL PERFORMANCE CURVES APT20GF120B_SRDQ1(G) 1200V APT20GF120BRDQ1 APT20GF120SRDQ1APT20GF120BRDQ1G* APT20GF120SRDQ1G**G Denotes RoHS Compliant, Pb Free Terminal Finish.(B)FAST IGBT & FREDD3PAK(S)CThe Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through G Etechnology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery

1.1. apt20gf120srd.pdf Size:106K _apt

APT20GF120BRDAPT20GF120SRD1200V 32AFast IGBT & FREDTO-247The Fast IGBT is a new generation of high voltage power IGBTs. Using Non- D3PAKPunch Through Technology the Fast IGBT combined with an APT free-wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior ruggednessGCand fast switching speed.CEG E Low Forward Voltage Drop High Freq. Switching

 4.1. apt20gf120brdq1g.pdf Size:446K _apt

TYPICAL PERFORMANCE CURVES APT20GF120B_SRDQ1(G) 1200V APT20GF120BRDQ1 APT20GF120SRDQ1APT20GF120BRDQ1G* APT20GF120SRDQ1G**G Denotes RoHS Compliant, Pb Free Terminal Finish.(B)FAST IGBT & FREDD3PAK(S)CThe Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through G Etechnology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery

4.2. apt20gf120brd.pdf Size:114K _apt

APT20GF120BRD1200V 32AFast IGBT & FREDThe Fast IGBT is a new generation of high voltage power IGBTs. Using Non- TO-247Punch Through Technology the Fast IGBT combined with an APT free-wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superiorruggedness and fast switching speed.G Low Forward Voltage Drop High Freq. Switching to 20KHzCCE Low Tail Cur

 4.3. apt20gf120br.pdf Size:73K _apt

APT20GF120BRAPT20GF120BR1200V 32AFast IGBTTO-247The Fast IGBT is a new generation of high voltage power IGBTs. UsingNon-Punch Through Technology the Fast IGBT offers superior ruggedness,fast switching speed and low Collector-Emitter On voltage.G Low Forward Voltage Drop High Freq. Switching to 20KHzCCE Low Tail Current Ultra Low Leakage Current Avala

4.4. apt20gf120brg.pdf Size:84K _apt

APT20GF120BRAPT20GF120BR1200V 32AFast IGBTTO-247The Fast IGBT is a new generation of high voltage power IGBTs. UsingNon-Punch Through Technology the Fast IGBT offers superior ruggedness,fast switching speed and low Collector-Emitter On voltage.G Low Forward Voltage Drop High Freq. Switching to 20KHzCCE Low Tail Current Ultra Low Leakage Current Avala

 4.5. apt20gf120kr.pdf Size:72K _apt

APT20GF120KR1200V 32AFast IGBTTO-220The Fast IGBT is a new generation of high voltage power IGBTs. UsingNon-Punch Through Technology the Fast IGBT offers superior ruggedness,fast switching speed and low Collector-Emitter On voltage.GC Low Forward Voltage Drop High Freq. Switching to 20KHzEC Low Tail Current Ultra Low Leakage Current Avalanche Rated

4.6. apt20gf120krg.pdf Size:81K _apt

APT20GF120KRAPT20GF120KR1200V 32AFast IGBTTO-220The Fast IGBT is a new generation of high voltage power IGBTs. UsingNon-Punch Through Technology the Fast IGBT offers superior ruggedness,fast switching speed and low Collector-Emitter On voltage. Low Forward Voltage Drop High Freq. Switching to 20KHzCGC Low Tail Current Ultra Low Leakage CurrentE Avala

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