Справочник IGBT. APT30GN60KG

 

APT30GN60KG - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: APT30GN60KG
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Максимальная рассеиваемая мощность (Pc), W: 203
   Предельно-допустимое напряжение коллектор-эмиттер |Vce|, V: 600
   Максимально допустимое напряжение эмиттер-затвор |Vge|, V: 30
   Максимальный постоянный ток коллектора |Ic| @25℃, A: 37
   Напряжение насыщения коллектор-эмиттер типовое |VCE(sat)|, V: 1.7
   Максимальное пороговое напряжение затвор-эмиттер |VGE(th)|, V: 6.5
   Максимальная температура перехода (Tj), ℃: 175
   Время нарастания типовое (tr), nS: 14
   Емкость коллектора типовая (Cc), pf: 70
   Общий заряд затвора (Qg), typ, nC: 165
   Тип корпуса: TO220

 Аналог (замена) для APT30GN60KG

 

 

APT30GN60KG Datasheet (PDF)

 ..1. Size:140K  microsemi
 apt30gn60kg.pdf

APT30GN60KG APT30GN60KG

TYPICAL PERFORMANCE CURVESAPT30GN60K(G) 600V APT30GN60KAPT30GN60KG**G Denotes RoHS Compliant, Pb Free Terminal Finish.Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a

 5.1. Size:395K  apt
 apt30gn60bg.pdf

APT30GN60KG APT30GN60KG

TYPICAL PERFORMANCE CURVES APT30GN60B(G) 600V APT30GN60B APT30GN60BG**G Denotes RoHS Compliant, Pb Free Terminal Finish.Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and

 5.2. Size:429K  apt
 apt30gn60bdq2g.pdf

APT30GN60KG APT30GN60KG

TYPICAL PERFORMANCE CURVES APT30GN60BDQ2(G) 600V APT30GN60BDQ2 APT30GN60BDQ2G**G Denotes RoHS Compliant, Pb Free Terminal Finish.Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distrib

 5.3. Size:687K  apt
 apt30gn60sg apt30gp60bg.pdf

APT30GN60KG APT30GN60KG

APT30GP60BAPT30GP60S600VB POWER MOS 7 IGBTD3PAKA new generation of high voltage power IGBTs. Using punch-throughtechnology and a proprietary metal gate, this IGBT has been optimized forSCvery fast switching, making it ideal for high frequency, high voltage switch-G Emode power supplies and tail current sensitive applications. In many cases,the POWER MOS 7 IGBT pr

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