APT30GN60KG - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: APT30GN60KG
Тип транзистора: IGBT
Тип управляющего канала: N-Channel
Максимальная рассеиваемая мощность (Pc), W: 203
Предельно-допустимое напряжение коллектор-эмиттер |Vce|, V: 600
Максимально допустимое напряжение эмиттер-затвор |Vge|, V: 30
Максимальный постоянный ток коллектора |Ic| @25℃, A: 37
Напряжение насыщения коллектор-эмиттер типовое |VCE(sat)|, V: 1.7
Максимальная температура перехода (Tj), ℃: 175
Время нарастания типовое (tr), nS: 14
Емкость коллектора типовая (Cc), pf: 70
Тип корпуса: TO220
Аналог (замена) для APT30GN60KG
APT30GN60KG Datasheet (PDF)
apt30gn60kg.pdf

TYPICAL PERFORMANCE CURVESAPT30GN60K(G) 600V APT30GN60KAPT30GN60KG**G Denotes RoHS Compliant, Pb Free Terminal Finish.Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a
apt30gn60sg apt30gp60bg.pdf

APT30GP60BAPT30GP60S600VB POWER MOS 7 IGBTD3PAKA new generation of high voltage power IGBTs. Using punch-throughtechnology and a proprietary metal gate, this IGBT has been optimized forSCvery fast switching, making it ideal for high frequency, high voltage switch-G Emode power supplies and tail current sensitive applications. In many cases,the POWER MOS 7 IGBT pr
apt30gn60bdq2g.pdf

TYPICAL PERFORMANCE CURVES APT30GN60BDQ2(G) 600V APT30GN60BDQ2 APT30GN60BDQ2G**G Denotes RoHS Compliant, Pb Free Terminal Finish.Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distrib
apt30gn60bg.pdf

TYPICAL PERFORMANCE CURVES APT30GN60B(G) 600V APT30GN60B APT30GN60BG**G Denotes RoHS Compliant, Pb Free Terminal Finish.Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and
Другие IGBT... RJH1CF5RDPQ-80 , APT15GN120BDQ1G , APT15GN120SDQ1G , APT20GF120BRDQ1G , APT20GF120SRDQ1G , APT20GF120BRG , APT20GF120KRG , APT30GN60BG , NGD8201N , AP30G120W , AP30G100W , AOK30B60D1 , AP30G120ASW , AP30G120BSW-HF , AP30G120CSW-HF , AP30G120SW , APT28GA60BD15 .



Список транзисторов
Обновления
IGBT: JNG8T60FT1 | JNG80T60LS | JNG75T65HYU2 | JNG75T65HXU1 | JNG75T120QZU1 | JNG75T120QS1 | JNG75T120LS | JNG60T60HS | JNG5T65DS1 | JNG50N120QS1 | JNG50N120QFU1