Справочник IGBT. AP30G120W

 

AP30G120W - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

Наименование: AP30G120W

Тип транзистора: IGBT

Тип управляющего канала: N-Channel

Максимальная рассеиваемая мощность (Pc), W: 208

Предельно-допустимое напряжение коллектор-эмиттер |Vce|, V: 1200

Максимально допустимое напряжение эмиттер-затвор |Vge|, V: 20

Максимальный постоянный ток коллектора |Ic| @25℃, A: 80

Напряжение насыщения коллектор-эмиттер типовое |VCE(sat)|, V: 3.2

Максимальная температура перехода (Tj), ℃: 150

Время нарастания типовое (tr), nS: 30

Емкость коллектора типовая (Cc), pf: 205

Тип корпуса: TO247

Аналог (замена) для AP30G120W

 

 

AP30G120W Datasheet (PDF)

 ..1. Size:95K  ape
ap30g120w.pdf

AP30G120W AP30G120W

AP30G120WPb Free Plating ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTORFeaturesVCES 1100V High speed switching IC 30A Low Saturation VoltageVCE(sat)=3.0V@IC=30ACG Industry Standard TO-3P PackageG RoHS Compliant TO-3PCEEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCES Collector-Emitter Voltage 1100 V

 6.1. Size:98K  ape
ap30g120asw.pdf

AP30G120W AP30G120W

AP30G120ASWRoHS-compliant ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTOR WITH FRD.Features High Speed Switching VCES 1200V Low Saturation Voltage IC 30AVCE(sat)=2.9V@IC=30AC CO-PAK, IGBT With FRD GCTO-3PG RoHS CompliantEEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCES Collector-Emitter Voltage 1200 V

 6.2. Size:97K  ape
ap30g120sw.pdf

AP30G120W AP30G120W

AP30G120SWPb Free Plating ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTOR WITH FRD.Features High speed switching VCES 1200V Low Saturation Voltage IC 30AVCE(sat)=3.0V@IC=30AC CO-PAK, IGBT with FRDGTO-3PG RoHS Compliant CEEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCES Collector-Emitter Voltage 1200 V

 6.3. Size:99K  ape
ap30g120bsw-hf.pdf

AP30G120W AP30G120W

AP30G120BSW-HFHalogen-Free ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTOR WITH FRD.Features High Speed Switching VCES 1200V Low Saturation Voltage IC 30AVCE(sat)=2.9V@IC=30AC CO-PAK, IGBT With FRD GCTO-3PG RoHS Compliant & Halogen-FreeEEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCES Collector-Emitter

 6.4. Size:99K  ape
ap30g120csw-hf.pdf

AP30G120W AP30G120W

AP30G120CSW-HFHalogen-Free ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTOR WITH FRD.Features High Speed Switching VCES 1200V Low Saturation Voltage IC 30AVCE(sat)=2.9V@IC=30AC CO-PAK, IGBT With FRD GCTO-3PG RoHS Compliant & Halogen-FreeEEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCES Collector-Emitter

Другие IGBT... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , TGAN20N135FD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
Back to Top