AP30G100W - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: AP30G100W
Тип транзистора: IGBT
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 208 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1000 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 30 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 60 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 3.8 V @25℃
Tjⓘ - Максимальная температура перехода: 150 ℃
trⓘ - Время нарастания типовое: 40 nS
Coesⓘ - Выходная емкость, типовая: 105 pF
Тип корпуса: TO247
AP30G100W Datasheet (PDF)
ap30g100w.pdf
AP30G100WRoHS-compliant ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTORFeaturesVCES 1000V High speed switching IC 30A Low Saturation VoltageVCE(sat)=3.0V@IC=30ACG Industry Standard TO-3P Package GC RoHS Compliant TO-3PEEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCES Collector-Emitter Voltage 1000 VVG
ap30g120sw.pdf
AP30G120SWPb Free Plating ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTOR WITH FRD.Features High speed switching VCES 1200V Low Saturation Voltage IC 30AVCE(sat)=3.0V@IC=30AC CO-PAK, IGBT with FRDGTO-3PG RoHS Compliant CEEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCES Collector-Emitter Voltage 1200 V
ap30g120bsw-hf.pdf
AP30G120BSW-HFHalogen-Free ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTOR WITH FRD.Features High Speed Switching VCES 1200V Low Saturation Voltage IC 30AVCE(sat)=2.9V@IC=30AC CO-PAK, IGBT With FRD GCTO-3PG RoHS Compliant & Halogen-FreeEEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCES Collector-Emitter
ap30g120w.pdf
AP30G120WPb Free Plating ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTORFeaturesVCES 1100V High speed switching IC 30A Low Saturation VoltageVCE(sat)=3.0V@IC=30ACG Industry Standard TO-3P PackageG RoHS Compliant TO-3PCEEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCES Collector-Emitter Voltage 1100 V
ap30g120asw.pdf
AP30G120ASWRoHS-compliant ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTOR WITH FRD.Features High Speed Switching VCES 1200V Low Saturation Voltage IC 30AVCE(sat)=2.9V@IC=30AC CO-PAK, IGBT With FRD GCTO-3PG RoHS CompliantEEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCES Collector-Emitter Voltage 1200 V
ap30g120csw-hf.pdf
AP30G120CSW-HFHalogen-Free ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTOR WITH FRD.Features High Speed Switching VCES 1200V Low Saturation Voltage IC 30AVCE(sat)=2.9V@IC=30AC CO-PAK, IGBT With FRD GCTO-3PG RoHS Compliant & Halogen-FreeEEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCES Collector-Emitter
Другие IGBT... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
Список транзисторов
Обновления
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2