Справочник IGBT. APT30GS60SRDQ2G

 

APT30GS60SRDQ2G - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

Наименование: APT30GS60SRDQ2G

Тип управляющего канала: N-Channel

Максимальная рассеиваемая мощность (Pc): 250

Предельно-допустимое напряжение коллектор-эмиттер (Uce): 600

Напряжение насыщения коллектор-эмиттер (Ucesat): 3.25

Максимально допустимое напряжение эмиттер-затвор (Ueg): 30

Максимальный постоянный ток коллектора (Ic): 30

Максимальная температура перехода (Tj): 150

Время нарастания: 29

Емкость коллектора (Cc), pf: 140

Корпус: TO268AB

Аналог (замена) для APT30GS60SRDQ2G

 

 

APT30GS60SRDQ2G Datasheet (PDF)

1.1. apt30gs60brdq2g.pdf Size:266K _igbt_a

APT30GS60SRDQ2G
APT30GS60SRDQ2G

APT30GS60BRDQ2(G) APT30GS60SRDQ2(G) 600V, 30A, VCE(ON) = 2.8V Typical Thunderbolt® High Speed NPT IGBT with Anti-Parallel 'DQ' Diode The Thunderbolt HS™ series is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for significantly lower turn-on energy Eoff. The low switching losses enable operation at switching frequ

1.2. apt30gs60srdq2g.pdf Size:266K _igbt_a

APT30GS60SRDQ2G
APT30GS60SRDQ2G

APT30GS60BRDQ2(G) APT30GS60SRDQ2(G) 600V, 30A, VCE(ON) = 2.8V Typical Thunderbolt® High Speed NPT IGBT with Anti-Parallel 'DQ' Diode The Thunderbolt HS™ series is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for significantly lower turn-on energy Eoff. The low switching losses enable operation at switching frequ

 4.1. apt30gp60bsc.pdf Size:211K _apt

APT30GS60SRDQ2G
APT30GS60SRDQ2G

TYPICAL PREFORMANCE CURVES APT30GP60BSC APT30GP60BSC 600V ® POWER MOS 7 IGBT TO-247 A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode G power supplies and tail current sensitive applications. In many cases, the C

4.2. apt30gp60b.pdf Size:90K _apt

APT30GS60SRDQ2G
APT30GS60SRDQ2G

APT30GP60B 600V ® POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through TO-247 technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch- mode power supplies and tail current sensitive applications. In many cases, the POWER MOS 7® IGBT provides a lower cost alter

 4.3. apt30gp60jdf1.pdf Size:207K _apt

APT30GS60SRDQ2G
APT30GS60SRDQ2G

TYPICAL PERFORMANCE CURVES APT30GP60JDF1 APT30GP60JDF1 600V ® POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode power supplies and tail current sensitive applications. In many cases, the "UL Recog

4.4. apt30gf60ju3.pdf Size:473K _apt

APT30GS60SRDQ2G
APT30GS60SRDQ2G

APT30GF60JU3 ISOTOP® Buck chopper VCES = 600V IC = 30A @ Tc = 100°C NPT IGBT C Application • AC and DC motor control • Switched Mode Power Supplies G Features • Non Punch Through (NPT) THUNDERBOLT IGBT® - Low voltage drop - Low tail current E - Switching frequency up to 100 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanch

 4.5. apt30gt60brd.pdf Size:68K _apt

APT30GS60SRDQ2G
APT30GS60SRDQ2G

APT30GT60BRD 600V 55A Thunderbolt IGBT™ & FRED The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs. TO-247 Using Non-Punch Through Technology the Thunderbolt IGBT™ combined with an APT free-wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior ruggedness and ultrafast switching speed. G • Low Forward Voltage Drop • High Freq. Switching to 150KHz

4.6. apt30gt60ar.pdf Size:26K _apt

APT30GS60SRDQ2G
APT30GS60SRDQ2G

APT30GT60AR 600V 40A Thunderbolt IGBT™ TO-3 The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs. (TO-204AE) Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed. • Low Forward Voltage Drop • High Freq. Switching to 150KHz C • Low Tail Current • Ultra Low Leakage Current • Avalanche Rated

4.7. apt30gt60kr.pdf Size:25K _apt

APT30GS60SRDQ2G
APT30GS60SRDQ2G

APT30GT60KR 600V 58A Thunderbolt IGBT™ TO-220 The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed. G C • Low Forward Voltage Drop • High Freq. Switching to 150KHz E C • Low Tail Current • Ultra Low Leakage Current • Avalanche Rated •

4.8. apt30gt60br.pdf Size:24K _apt

APT30GS60SRDQ2G
APT30GS60SRDQ2G

APT30GT60BR 600V 58A Thunderbolt IGBT™ TO-247 The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed. G • Low Forward Voltage Drop • High Freq. Switching to 150KHz C C E • Low Tail Current • Ultra Low Leakage Current • Avalanche Rated •

4.9. apt30gt60cr.pdf Size:27K _apt

APT30GS60SRDQ2G
APT30GS60SRDQ2G

APT30GT60CR 600V 30A Thunderbolt IGBT™ TO-254 TO-254 The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed. • Low Forward Voltage Drop • High Freq. Switching to 150KHz C C • Low Tail Current • Ultra Low Leakage Current E G • Avalanche R

4.10. apt30gf60ju2.pdf Size:473K _apt

APT30GS60SRDQ2G
APT30GS60SRDQ2G

APT30GF60JU2 ISOTOP® Boost chopper VCES = 600V IC = 30A @ Tc = 100°C NPT IGBT K Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction C • Brake switch Features G • Non Punch Through (NPT) THUNDERBOLT IGBT® - Low voltage drop - Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes -

4.11. apt30gp60bdf1.pdf Size:199K _apt

APT30GS60SRDQ2G
APT30GS60SRDQ2G

TYPICAL PERFORMANCE CURVES APT30GP60BDF1 APT30GP60BDF1 600V ® POWER MOS 7 IGBT TO-247 A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode G power supplies and tail current sensitive applications. In many cases, the

4.12. apt30gt60brdq2g.pdf Size:170K _igbt_a

APT30GS60SRDQ2G
APT30GS60SRDQ2G

TYPICAL PERFORMANCE CURVES APT30GT60BRDQ2(G) 600V APT30GT60BRDQ2 APT30GT60BRDQ2G* ® *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT® The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast switching speed. G C E • Low Forward Voltage Dro

4.13. apt30gn60kg.pdf Size:140K _igbt_a

APT30GS60SRDQ2G
APT30GS60SRDQ2G

TYPICAL PERFORMANCE CURVES APT30GN60K(G) 600V APT30GN60K APT30GN60KG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a

4.14. apt30gt60brg.pdf Size:401K _igbt_a

APT30GS60SRDQ2G
APT30GS60SRDQ2G

TYPICAL PERFORMANCE CURVES APT30GT60BR(G) 600V APT30GT60BR APT30GT60BRG* ® *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT® The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast switching speed. G C E • Low Forward Voltage Drop • Hig

4.15. apt30gn60bdq2g.pdf Size:429K _igbt_a

APT30GS60SRDQ2G
APT30GS60SRDQ2G

TYPICAL PERFORMANCE CURVES APT30GN60BDQ2(G) 600V APT30GN60BDQ2 APT30GN60BDQ2G* ® *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distrib

4.16. apt30gt60krg.pdf Size:114K _igbt_a

APT30GS60SRDQ2G
APT30GS60SRDQ2G

TYPICAL PERFORMANCE CURVES APT30GT60KR(G) 600V APT30GT60KR APT30GT60KRG* ® *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT® TO-220 The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast switching speed. • Low Forward Voltage Drop • High

4.17. apt30gn60bg.pdf Size:395K _igbt_a

APT30GS60SRDQ2G
APT30GS60SRDQ2G

TYPICAL PERFORMANCE CURVES APT30GN60B(G) 600V APT30GN60B APT30GN60BG* ® *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and

4.18. apt30gt60brdlg.pdf Size:192K _igbt_a

APT30GS60SRDQ2G
APT30GS60SRDQ2G

TYPICAL PERFORMANCE CURVES APT30GT60BRDL(G) 600V APT30GT60BRDL(G) *G Denotes RoHS Compliant, Pb Free Terminal Finish. Resonant Mode Combi IGBT® The Thunderbolt IGBT® used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast switching speed. Typical Applicatio

4.19. apt30gp60bg.pdf Size:687K _igbt_a

APT30GS60SRDQ2G
APT30GS60SRDQ2G

APT30GP60B APT30GP60S 600V B ® POWER MOS 7 IGBT D3PAK A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for S C very fast switching, making it ideal for high frequency, high voltage switch- G E mode power supplies and tail current sensitive applications. In many cases, the POWER MOS 7® IGBT pr

4.20. apt30gn60sg.pdf Size:687K _igbt_a

APT30GS60SRDQ2G
APT30GS60SRDQ2G

APT30GP60B APT30GP60S 600V B ® POWER MOS 7 IGBT D3PAK A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for S C very fast switching, making it ideal for high frequency, high voltage switch- G E mode power supplies and tail current sensitive applications. In many cases, the POWER MOS 7® IGBT pr

4.21. apt30gp60bdq1g.pdf Size:433K _igbt_a

APT30GS60SRDQ2G
APT30GS60SRDQ2G

TYPICAL PERFORMANCE CURVES APT30GP60BDQ1(G) 600V APT30GP60BDQ1 APT30GP60BDQ1G* ® *G Denotes RoHS Compliant, Pb Free Terminal Finish. ® POWER MOS 7 IGBT The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency swi

Другие IGBT... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , 1MBH50D-060 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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