Справочник IGBT. APT64GA90B2D30

 

APT64GA90B2D30 Даташит. Аналоги. Параметры и характеристики.


   Наименование: APT64GA90B2D30
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pc ⓘ - Максимальная рассеиваемая мощность: 500 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 900 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 30 V
   |Ic| ⓘ - Максимальный постоянный ток коллектора: 64 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.2 V @25℃
   Tj ⓘ - Максимальная температура перехода: 150 ℃
   tr ⓘ - Время нарастания типовое: 26 nS
   Coesⓘ - Выходная емкость, типовая: 318 pF
   Тип корпуса: TO247
 

 Аналог (замена) для APT64GA90B2D30

   - подбор ⓘ IGBT транзистора по параметрам

 

APT64GA90B2D30 Datasheet (PDF)

 ..1. Size:226K  microsemi
 apt64ga90b2d30 apt64ga90ld30.pdf pdf_icon

APT64GA90B2D30

APT64GA90LD30 APT64GA90B2D30 900V APT64GA90LD30High Speed PT IGBTPOWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies

 4.1. Size:199K  microsemi
 apt64ga90b.pdf pdf_icon

APT64GA90B2D30

APT64GA90B APT64GA90S 900V High Speed PT IGBTAPT64GA90SPOWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - D3PAKVCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies pr

 5.1. Size:199K  microsemi
 apt64ga90s.pdf pdf_icon

APT64GA90B2D30

APT64GA90B APT64GA90S 900V High Speed PT IGBTAPT64GA90SPOWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - D3PAKVCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies pr

Другие IGBT... APT50GT60SRG , APT100GN120J , APT80GP60JDQ3 , 100MT060WDF , APT30GN60SG , APT30GP60BG , TGL60N100ND1 , APT64GA90B , GT30G122 , APT64GA90LD30 , APT64GA90S , APT100GN60B2G , APT100GT60JRDL , APT100GT60JRDQ4 , APT60GT60BRG , APT60GT60SRG , APT200GT60JR .

History: KWRFF100R12SWM | RJH60V2BDPP-M0 | IXSN50N60BD3 | IXGX28N140B3H1 | SKM600GA12E4

 

 
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