Справочник IGBT. APT68GA60LD40

 

APT68GA60LD40 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: APT68GA60LD40
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 520 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 30 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 68 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.9 V @25℃
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 27 nS
   Coesⓘ - Выходная емкость, типовая: 526 pF
   Тип корпуса: TO264

 Аналог (замена) для APT68GA60LD40

 

 

APT68GA60LD40 Datasheet (PDF)

 ..1. Size:262K  microsemi
 apt68ga60ld40.pdf

APT68GA60LD40 APT68GA60LD40

APT68GA60LD40 APT68GA60B2D40 600V APT68GA60LD40High Speed PT IGBTPOWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies

 5.1. Size:242K  microsemi
 apt68ga60b2d40.pdf

APT68GA60LD40 APT68GA60LD40

APT68GA60LD40 APT68GA60B2D40 600V APT68GA60LD40High Speed PT IGBTPOWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies

 5.2. Size:208K  microsemi
 apt68ga60b apt68ga60s.pdf

APT68GA60LD40 APT68GA60LD40

APT68GA60B APT68GA60S 600V High Speed PT IGBTAPT68GA60SPOWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - D3PAKVCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies pr

Другие IGBT... APT100GN60B2G , APT100GT60JRDL , APT100GT60JRDQ4 , APT60GT60BRG , APT60GT60SRG , APT200GT60JR , APT68GA60B , APT68GA60B2D40 , IRG4PC50UD , APT68GA60S , VS-GA100TS120UPBF , APT75GN60BG , APT150GN60B2G , APT150GN60J , APT150GN60JDQ4 , APT150GN60LDQ4G , APT35GP120BG .

 

 
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