APT150GN60LDQ4G - аналоги и описание IGBT

 

APT150GN60LDQ4G - аналоги, основные параметры, даташиты

Наименование: APT150GN60LDQ4G

Тип транзистора: IGBT

Тип управляющего канала: N

Предельные значения

Pc ⓘ - Максимальная рассеиваемая мощность: 536 W

|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V

|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 30 V

|Ic| ⓘ - Максимальный постоянный ток коллектора: 123 A @25℃

Tj ⓘ - Максимальная температура перехода: 175 ℃

Электрические характеристики

|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.65 V @25℃

tr ⓘ - Время нарастания типовое: 110 nS

Coesⓘ - Выходная емкость, типовая: 350 pF

Тип корпуса: TO264

 Аналог (замена) для APT150GN60LDQ4G

- подбор ⓘ IGBT транзистора по параметрам

 

APT150GN60LDQ4G даташит

 0.1. Size:235K  microsemi
apt150gn60ldq4g.pdfpdf_icon

APT150GN60LDQ4G

600V APT150GN60LDQ4(G) Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coeffi cient. A built-in gate resistor ensures extremely relia

 4.1. Size:534K  apt
apt150gn60jdq4.pdfpdf_icon

APT150GN60LDQ4G

TYPICAL PERFORMANCE CURVES APT150GN60JDQ4 600V APT150GN60JDQ4 Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built

 4.2. Size:483K  apt
apt150gn60j.pdfpdf_icon

APT150GN60LDQ4G

TYPICAL PERFORMANCE CURVES APT150GN60J 600V APT150GN60J Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in ga

 4.3. Size:168K  microsemi
apt150gn60b2g.pdfpdf_icon

APT150GN60LDQ4G

TYPICAL PERFORMANCE CURVES APT150GN60B2(G) 600V APT150GN60B2(G) Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coeffi cient. A built-

Другие IGBT... APT68GA60B2D40 , APT68GA60LD40 , APT68GA60S , VS-GA100TS120UPBF , APT75GN60BG , APT150GN60B2G , APT150GN60J , APT150GN60JDQ4 , IKW40N65WR5 , APT35GP120BG , APT40GP90B2DQ2G , APT40GP90BG , APT50GN120B2G , APT50GN120L2DQ2G , APT40GP60B2DQ2G , APT40GP60BG , APT40GP60SG .

History: TGL40N120ND | APT80GA90LD40

 

 

 

 

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