Справочник IGBT. APT40GP60BG

 

APT40GP60BG - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: APT40GP60BG
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 543 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 62 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.1 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6 V
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 29 nS
   Coesⓘ - Выходная емкость, типовая: 395 pF
   Qgⓘ - Общий заряд затвора, typ: 135 nC
   Тип корпуса: TO247

 Аналог (замена) для APT40GP60BG

 

 

APT40GP60BG Datasheet (PDF)

 ..1. Size:109K  apt
 apt40gp60bg.pdf

APT40GP60BG APT40GP60BG

APT40GP60BAPT40GP60S600VPOWER MOS 7 IGBTTO-247D3PAKThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyCG G Eswitchmode power supplies.CEC Low Conduction Loss 100 kHz operation @ 400V, 4

 4.1. Size:197K  apt
 apt40gp60b2df2.pdf

APT40GP60BG APT40GP60BG

TYPICAL PERFORMANCE CURVESAPT40GP60B2DF2APT40GP60B2DF2600VPOWER MOS 7 IGBTTMT-MaxThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyGswitchmode power supplies.CE Low Conduction Loss 100 k

 4.2. Size:96K  apt
 apt40gp60b.pdf

APT40GP60BG APT40GP60BG

APT40GP60BAPT40GP60S600VPOWER MOS 7 IGBTTO-247D3PAKThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyCG G Eswitchmode power supplies.CEC Low Conduction Loss 100 kHz operation @ 400V, 4

 4.3. Size:537K  apt
 apt40gp60b2dq2g.pdf

APT40GP60BG APT40GP60BG

TYPICAL PERFORMANCE CURVES APT40GP60B2DQ2(G) 600V APT40GP60B2DQ2 APT40GP60B2DQ2G**G Denotes RoHS Compliant, Pb Free Terminal Finish.POWER MOS 7 IGBTTMT-MaxThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high

Другие IGBT... APT150GN60JDQ4 , APT150GN60LDQ4G , APT35GP120BG , APT40GP90B2DQ2G , APT40GP90BG , APT50GN120B2G , APT50GN120L2DQ2G , APT40GP60B2DQ2G , IHW20N120R2 , APT40GP60SG , APT75GP120JDQ3 , APT100GT120JR , APT100GT120JRDL , APT200GT60JRDL , APT80GA60B , APT80GA60LD40 , APT80GA60S .

 

 
Back to Top