HGT1S5N120BNDS datasheet, аналоги, основные параметры

Наименование: HGT1S5N120BNDS  📄📄 

Тип транзистора: IGBT

Тип управляющего канала: N

Предельные значения

Pc ⓘ - Максимальная рассеиваемая мощность: 167 W

|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V

|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V

|Ic| ⓘ - Максимальный постоянный ток коллектора: 21 A @25℃

Tj ⓘ - Максимальная температура перехода: 150 ℃

Электрические характеристики

|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.45 V @25℃

tr ⓘ - Время нарастания типовое: 15 nS

Тип корпуса: TO263

  📄📄 Копировать 

 Аналог (замена) для HGT1S5N120BNDS

- подбор ⓘ IGBT транзистора по параметрам

 

HGT1S5N120BNDS даташит

 ..1. Size:89K  1
 hgtg5n120bnd hgtp5n120bnd hgt1s5n120bnds.pdf pdf_icon

HGT1S5N120BNDS

HGTG5N120BND, HGTP5N120BND, HGT1S5N120BNDS Data Sheet January 2000 File Number 4597.2 21A, 1200V, NPT Series N-Channel IGBTs Features with Anti-Parallel Hyperfast Diodes 21A, 1200V, TC = 25oC The HGTG5N120BN, HGTP5N120BND, and 1200V Switching SOA Capability HGT1S5N120BNDS are Non-Punch Through (NPT) IGBT Typical Fall Time. . . . . . . . . . . . . . . . 175ns at TJ = 150oC

 2.1. Size:82K  1
 hgtp5n120bn hgt1s5n120bns.pdf pdf_icon

HGT1S5N120BNDS

HGTP5N120BN, HGT1S5N120BNS Data Sheet January 2000 File Number 4599.2 21A, 1200V, NPT Series N-Channel IGBTs Features The HGTP5N120BN and the HGT1S5N120BNS are 21A, 1200V, TC = 25oC Non-Punch Through (NPT) IGBT designs. They are new 1200V Switching SOA Capability members of the MOS gated high voltage switching IGBT Typical Fall Time. . . . . . . . . . . . . . . . 175ns at TJ

 4.1. Size:87K  1
 hgtg5n120cnd hgtp5n120cnd hgt1s5n120cnds.pdf pdf_icon

HGT1S5N120BNDS

HGTG5N120CND, HGTP5N120CND, HGT1S5N120CNDS Data Sheet January 2000 File Number 4598.2 25A, 1200V, NPT Series N-Channel IGBT Features with Anti-Parallel Hyperfast Diode 25A, 1200V, TC = 25oC The HGTG5N120CND, HGTP5N120CND and 1200V Switching SOA Capability HGT1S5N120CNDS are Non-Punch Through (NPT) IGBT Typical Fall Time. . . . . . . . . . . . . . . . 350ns at TJ = 150oC de

 4.2. Size:126K  1
 hgtp5n120cn hgt1s5n120cns.pdf pdf_icon

HGT1S5N120BNDS

HGTP5N120CN, HGT1S5N120CNS Data Sheet December 2001 25A, 1200V, NPT Series N-Channel IGBT Features The HGTP5N120CN and HGT1S5N120CNS are Non-Punch 25A, 1200V, TC = 25oC Through (NPT) IGBT designs. They are new members of the 1200V Switching SOA Capability MOS gated high voltage switching IGBT family. IGBTs Typical Fall Time. . . . . . . . . . . . . . . . 350ns at TJ = 150

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... HGT1S3N60A4DS, HGT1S3N60A4S, HGT1S3N60B3, HGT1S3N60B3DS, HGT1S3N60B3S, HGT1S3N60C3D, HGT1S3N60C3DS, HGT1S3N60C3DS9A, FGPF4536, HGT1S5N120BNS, HGT1S5N120CNDS, HGT1S5N120CNS, HGT1S7N60A4DS, HGT1S7N60B3, HGT1S7N60B3D, HGT1S7N60B3DS, HGT1S7N60B3S